Method of dividing and exposing patterns
    1.
    发明授权
    Method of dividing and exposing patterns 失效
    分割和曝光图案的方法

    公开(公告)号:US5859690A

    公开(公告)日:1999-01-12

    申请号:US824268

    申请日:1997-03-26

    申请人: Manabu Toguchi

    发明人: Manabu Toguchi

    IPC分类号: G02F1/1362 G03F7/20 G03D27/42

    摘要: A method of dividing a circuit pattern to be transferred by a photoprinting apparatus from a reticle to a photosensitive surface. The circuit pattern has a display section and a conductor section. The method includes dividing the circuit pattern into a plurality of divided patterns wherein each of the divided patterns includes at least a part of the display section and a part of the conductor section; and forming a plurality of reticles, each of the reticles having at least one of the divided patterns thereon.

    摘要翻译: 将要由光印装置传送的电路图案从掩模版划分到感光表面的方法。 电路图案具有显示部和导体部。 该方法包括将电路图案划分为多个分割图案,其中每个分割图案包括显示部分的至少一部分和导体部分的一部分; 并且形成多个掩模版,每个所述标线具有至少一个所述划分图案。

    Planarization method and system using variable exposure
    2.
    发明授权
    Planarization method and system using variable exposure 失效
    使用可变曝光的平面化方法和系统

    公开(公告)号:US6064466A

    公开(公告)日:2000-05-16

    申请号:US950434

    申请日:1997-10-15

    摘要: A method and system for planarization of a semiconductor wafer is disclosed. The disclosed system includes a mask with at least a medium density pattern, where the pattern dimensions are below the resolving power of an exposure system. Less than full intensity of the exposing radiation passes through the medium density pattern of the mask to a resist layer and does not completely expose the underlying resist. Through adapting at least a portion of the mask to account for surface irregularities of a wafer's surface, improved planarization of the surface is achieved.

    摘要翻译: 公开了一种用于半导体晶片平坦化的方法和系统。 所公开的系统包括具有至少中密度图案的掩模,其中图案尺寸低于曝光系统的分辨率。 曝光辐射的不足全部强度通过掩模的中等密度图案到抗蚀剂层,并且不完全暴露下面的抗蚀剂。 通过适应掩模的至少一部分以解决晶片表面的表面不规则性,实现了表面的改进的平坦化。

    Projection exposure apparatus and exposure method and semiconductor
device production method therewith
    3.
    发明授权
    Projection exposure apparatus and exposure method and semiconductor device production method therewith 失效
    投影曝光装置及曝光方法及半导体装置的制造方法

    公开(公告)号:US5781277A

    公开(公告)日:1998-07-14

    申请号:US749628

    申请日:1996-11-18

    申请人: Kazunori Iwamoto

    发明人: Kazunori Iwamoto

    IPC分类号: G03F7/20 H01L21/027 G03D27/42

    摘要: A projection exposure apparatus includes a reticle stage for moving a reticle, a wafer stage for moving a wafer, a projection optical system for projecting a pattern formed on the reticle onto the wafer, a first supporting device for supporting at least one of the reticle stage and the wafer stage, a measurement device for measuring the position of at least one of the reticle and the wafer, a second supporting device for supporting the measurement device and a displacement/deformation absorber, through which the second supporting device is supported by the first supporting device, for absorbing displacement and deformation of the first supporting device. Also disclosed are exposure methods utilizing such a projection exposure apparatus.

    摘要翻译: 投影曝光装置包括用于移动掩模版的掩模版台,用于移动晶片的晶片台,用于将形成在掩模版上的图案投影到晶片上的投影光学系统,用于支撑至少一个标线片平台的第一支撑装置 以及晶片载台,用于测量标线片和晶片中的至少一个的位置的测量装置,用于支撑测量装置的第二支撑装置和位移/变形吸收体,第二支撑装置通过第一支撑装置被第一 支撑装置,用于吸收第一支撑装置的位移和变形。 还公开了利用这种投影曝光装置的曝光方法。

    Lithographic apparatus, device manufacturing method, performance measuring method, calibration method and computer program

    公开(公告)号:US07057705B2

    公开(公告)日:2006-06-06

    申请号:US10431583

    申请日:2003-05-08

    申请人: Johannes Heintze

    发明人: Johannes Heintze

    IPC分类号: G03D27/42

    摘要: A controller for a pulsed radiation source is a closed-loop controller of minimum order, preferably first, to effect dead beat control. Performance indicators for a pulsed radiation source in a lithographic apparatus are based on moving averages (MA) and moving standard deviations (MSD) of the error between target and actual pulse energies. The normalized indicators are given by: MA E , n ⁡ ( x k ) = 1 ∑ i = k - ( N slit - e - 1 ) k ⁢ ⁢ Ep ref ⁡ ( i ) · ∑ i = k - ( N slit - e - 1 ) k ⁢ ⁢ Ep err ⁡ ( i ) ⁢ ⁢ ( k = N slit - e ⁢ ⁢ … ⁢ ⁢ N scan ) , wherein Epref(i) and Eperr(i) indicate reference energy per pulse and energy error per pulse for point i and MSD E , n ⁡ ( x k ) = 1 N slit - e - 1 ⁢ ∑ i = k - ( N slit - e - 1 ) k ⁢ [ Ep err ⁡ ( i ) Ep ref ⁡ ( i ) - MA E , n ⁡ ( x k ) ] 2 ⁢ ⁢ ( k = N slit - e ⁢ ⁢ … ⁢ ⁢ N scan ) .

    Projection exposure apparatus
    6.
    发明授权
    Projection exposure apparatus 失效
    投影曝光装置

    公开(公告)号:US5801816A

    公开(公告)日:1998-09-01

    申请号:US814766

    申请日:1997-03-10

    申请人: Naomasa Shiraishi

    发明人: Naomasa Shiraishi

    摘要: A projection exposure apparatus includes a projection optical system which projects an image of a pattern formed on a mask on a substrate. The projection optical system has a first optical system for forming an intermediate image of the pattern, a first mirror disposed near the intermediate image for deflecting a light beam from the first optical system, and a second optical system for condensing the light beam from the first mirror and forming the image of the pattern on the substrate. The first optical system and the second optical system are subject to an aberration correction with respect to a first wavelength for exposure. A second mirror is disposed near the first mirror and corrects at least a portion of a chromatic aberration generated in the first optical system and the second optical system with respect to a second wavelength different from the first wavelength. A detecting system detects a positional relationship between a mark of the mask and a mark of the substrate with a light beam at the second wavelength through the first optical system, the second optical system, and the second mirror.

    摘要翻译: 投影曝光装置包括将形成在掩模上的图案的图像投影在基板上的投影光学系统。 投影光学系统具有用于形成图案的中间图像的第一光学系统,设置在中间图像附近的第一反射镜,用于偏转来自第一光学系统的光束;以及第二光学系统,用于将来自第一 镜子并在基底上形成图案的图像。 第一光学系统和第二光学系统相对于用于曝光的第一波长进行像差校正。 第二反射镜设置在第一反射镜附近并且校正在第一光学系统和第二光学系统中相对于不同于第一波长的第二波长产生的色差的至少一部分。 检测系统通过第一光学系统,第二光学系统和第二反射镜检测具有第二波长的光束的掩模的标记和基板的标记之间的位置关系。