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1.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08715892B2
公开(公告)日：2014-05-06
申请号：US13611707
申请日：2012-09-12
申请人： Noriyuki Sakaya , Osamu Nozawa
发明人： Noriyuki Sakaya , Osamu Nozawa
摘要： A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.
摘要翻译： 掩模坯料用于制造适于施加ArF准分子激光曝光光的二值掩模，并且具有用于在透明基板上形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且曝光用光的密度为2.8以上。 下层由含有钽和氮的材料制成，厚度为33nm以上。 上层由含有钽和氧的材料制成，厚度为3nm以上。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光的相位差为60度以下。
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公开(公告)号：US08283092B2
公开(公告)日：2012-10-09
申请号：US12394657
申请日：2009-02-27
申请人： Osamu Nozawa
发明人： Osamu Nozawa
摘要： A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and containing less than 62 at % nitrogen. The material is capable of being dry-etched with a chlorine-based gas containing no oxygen. The light-shielding film further includes a front-surface antireflection layer formed on the light-shielding layer and made of a material not capable of being dry-etched with a chlorine-based gas, but capable of being dry-etched with a fluorine-based gas.
摘要翻译： 光掩模坯料具有在透明基板上由至少两层构成的遮光膜。 遮光膜包括由主要包含氮化钽并且含有小于62at％的氮的材料制成的遮光层。 该材料能够用不含氧的氯基气体进行干蚀刻。 遮光膜还包括形成在遮光层上并由不能用氯气气体进行干法蚀刻的材料制成的表面抗反射层，但能够用氟 - 基于气体。
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3.发明申请公开(公告)号：US20120100470A1
公开(公告)日：2012-04-26
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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公开(公告)号：US20100040961A1
公开(公告)日：2010-02-18
申请号：US12542282
申请日：2009-08-17
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译： 一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。
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5.发明授权Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权半色调相移掩模空白，半色调相移掩模及其制造方法公开(公告)号：US07632612B2
公开(公告)日：2009-12-15
申请号：US11478687
申请日：2006-07-03
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
摘要翻译： 用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板，形成在用于透射曝光光束的基板上的透光部分，形成在基板上用于透射部分曝光的移相器部分 光束作为透射光束并且将透射光束的相位移动预定量，以及用于形成移相器部分的移相器膜。 半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消，从而保持和改善在边界部分处的优异的对比度 曝光图案被转印到要曝光的物体的表面上。 移相器膜包括以硅，氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。
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公开(公告)号：US07402228B2
公开(公告)日：2008-07-22
申请号：US10771997
申请日：2004-02-04
申请人： Osamu Nozawa , Hideaki Mitsui
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： C23C14/35
CPC分类号： G03F1/32 , C23C14/0036 , C23C14/0641 , C23C14/225 , C23C14/505 , G03F1/26 , G03F1/68
摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
摘要翻译： 公开了一种相移掩模坯料的制造方法，其中可以尽可能地减少坯料之间的相位角和透射率的分散，并且产率令人满意。 在相移掩模空白的制造方法中，使用溅射法在透明基板上连续地形成薄膜的工艺包括：依次对多个基板进行一系列将透明基板供应到溅射室 在溅射室中形成用于形成图案的薄膜，并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。
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7.发明申请Optically Semitransmissive Film, Photomask Blank and Photomask, and Method for Designing Optically Semitransmissive Film 有权光学半透射膜，光掩模空白和光掩模，以及设计光学半透射膜的方法公开(公告)号：US20070269723A1
公开(公告)日：2007-11-22
申请号：US11629210
申请日：2005-06-10
申请人： Yuki Shiota , Osamu Nozawa
发明人： Yuki Shiota , Osamu Nozawa
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0
摘要翻译： 本发明提供一种光学半透射膜，其具有接近零的相移，具有期望的透射率，并且相对较薄; 一种使用光学半透射膜的新型相移掩模; 可制造相移掩模的光掩模坯料; 以及用于设计光学半透射膜的方法。 该薄膜形成在透光性基板上并透过一部分具有所需波长λ的光，其中该薄膜具有至少一个能够实现以下功能的相差减小层。 具体地说，相位差降低层是折射率n和厚度d满足表达式0
单位：度）），其基于层透射光和层参考光之间的光学距离的差异计算。 -
8.发明授权公开(公告)号：US07011910B2
公开(公告)日：2006-03-14
申请号：US10421944
申请日：2003-04-24
申请人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui , Ryo Ohkubo
发明人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui , Ryo Ohkubo
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , G02B5/3083
摘要： In a halftone-type phase-shift mask blank having a phase shifter film 5, the phase shifter film 5 has a phase adjustment layer 4 for primarily controlling the phase of exposure light, and a transmissivity adjustment layer 3 which is formed between a transparent substrate 2 and the phase adjustment layer 4 and primarily controls the transmissivity of exposure light. The transmissivity adjustment layer 3 has a thickness of 90 angstroms or less.
摘要翻译： 在具有移相膜5的半色调型移相掩模坯料中，移相膜5具有用于主要控制曝光光的相位的相位调整层4和形成在透明基板之间的透射率调节层3 2和相位调整层4，并主要控制曝光光的透射率。 透射率调整层3的厚度为90埃以下。
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公开(公告)号：US06743553B2
公开(公告)日：2004-06-01
申请号：US10025569
申请日：2001-12-26
申请人： Yuki Shiota , Osamu Nozawa
发明人： Yuki Shiota , Osamu Nozawa
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： In a phase shift mask blank, a desired transmittance and phase shift amount are given in the vicinity of 157 nm as a wavelength of an F2 excimer laser. The phase shift mask blank has a phase shifter film satisfactory in a resistance to exposure light irradiation, resistance to chemicals, processability, moldability, and shape stability. The halftone phase shift mask blank having the phase shifter on a transparent substrate is used in an exposure light wavelength rage of 140 nm to 200 nm, the phase shifter film is formed of a film containing main constituting elements of silicon, oxygen, and nitrogen, and contains 35 and 45% of silicon, 1 to 60% of oxygen, and 5 to 60% of nitrogen in atomic percentage, and a total amount of the elements occupies at least 90% or more of a whole composition constituting the phase shifter portion.
摘要翻译： 在相移掩模空白中，作为F2准分子激光器的波长，在157nm附近给出期望的透射率和相移量。 相移掩模空白具有耐曝光光照射，耐化学品，加工性，成型性和形状稳定性令人满意的移相膜。 在140nm至200nm的曝光光波长范围内使用在透明基板上具有移相器的半色调相移掩模空白，移相膜由含有硅，氧和氮的主要构成元素的膜形成， 并且含有35％和45％的硅，1至60％的氧和5至60％的原子百分比的氮，并且元素的总量占构成移相器部分的整个组合物的至少90％以上 。
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10.发明授权Phase shift mask blank, phase shift mask, and method for manufacturing the same 有权相移掩模空白，相移掩模及其制造方法公开(公告)号：US06677087B2
公开(公告)日：2004-01-13
申请号：US09949797
申请日：2001-09-12
申请人： Osamu Nozawa , Hideaki Mitsui
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03C500
摘要： An object of the present invention is to provide a half-tone phase shift mask blank and a half-tone phase shift mask of which a translucent film has improved acid resistance, alkali resistance and resistance to excimer laser irradiation while maintaining the internal stress of the film within an acceptable range for the intended use. To achieve the aforementioned object, the present invention provides a half-tone phase shift mask blank which comprises a transparent substrate having provided thereon a translucent film comprising at least one thin layer containing silicon and at least one of nitrogen and oxygen and which is to be exposed to light whose center wavelength is 248 nm or shorter, wherein said translucent film is dense such that it has a center-line surface roughness (Ra) of 0.3 nm or smaller.
摘要翻译： 本发明的目的是提供一种半色调相移掩模空白和半色调相移掩模，其中半透明膜具有改善的耐酸性，耐碱性和耐受激准分子激光照射的同时保持内应力 电影在预期用途的可接受范围内。 为了实现上述目的，本发明提供了一种半色调相移掩模坯料，其包括在其上设置有半透明膜的透明基板，该半透明膜包括至少一个含硅和至少一个氮和氧的薄层， 暴露于中心波长为248nm或更短的光，其中所述半透明膜是致密的，使得其具有0.3nm或更小的中心线表面粗糙度（Ra）。
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