摘要:
A photomask for use in a lithographic process and a method of making a photomask are disclosed. A mask blank including a substrate, a sacrificial conductive layer disposed over the substrate and a radiation shielding layer disposed over the sacrificial conductive layer can be provided. Structures are then formed from the radiation shielding layer to define a pattern. Measurement of parameters associated with the structures are made with a measurement tool and, during the measuring, the sacrificial conductive layer provides a conductive plane to dissipate charge transferred to the mask by the measurement tool.
摘要:
A method of selecting a plurality of lithography process parameters for patterning a layout on a wafer includes simulating how the layout will print on the wafer for a plurality of resolution enhancement techniques (RETs), where each RET corresponds to a plurality of lithography process parameters. For each RET, the edges of structures within the simulated layout can be classified based on manufacturability. RETs that provide optimal manufacturability can be selected. In this manner, the simulation tool can be used to determine the optimal combination of scanner setup and reticle type for minimizing the variation in wafer critical dimension (CD).
摘要:
A system and method for generating an illumination intensity profile of an illuminator that forms part of a projection lithography system. Radiation from the illuminator is projected towards an illumination profile mask having a plurality of apertures such that each aperture passes a distinct portion of the radiation. The intensity of each of the distinct portions of radiation is detected and assembled to form the illumination intensity profile.
摘要:
A microdevice for forming a part of an integrated circuit and method for fabricating are disclosed. The microdevice can include a first conductive region and a second conductive region having a channel region interposed therebetween. The mircodevice has a channel region controlling component disposed over the channel region and separated therefrom by at least one dielectric layer. The channel region controlling component has a non-linear structural characteristic derived from a non-linear structural characteristic of a photo resist feature used as an etch mask for the channel region controlling component.
摘要:
A method of generating a metrology recipe includes identifying regions of interest within a device layout. A coordinate list, which corresponds to the identified regions of interest, can be provided and used to create a clipped layout, which can be represented by a clipped layout data file. The clipped layout data file and corresponding coordinate list can be provided and converted into a metrology recipe for guiding one or more metrology instruments in testing a processed wafer and/or reticle. The experimental metrology results received in response to the metrology request can be linked to corresponding design data and simulation data and stored in a queriable database system.
摘要:
A method of selecting a plurality of lithography process parameters for patterning a layout on a wafer includes simulating how the layout will print on the wafer for a plurality of resolution enhancement techniques (RETs), where each RET corresponds to a plurality of lithography process parameters. For each RET, the edges of structures within the simulated layout can be classified based on manufacturability. RETs that provide optimal manufacturability can be selected. In this manner, the simulation tool can be used to determine the optimal combination of scanner setup and reticle type for minimizing the variation in wafer critical dimension (CD).
摘要:
A method of producing design rules including generating a plurality of parametrically varying geometric layouts and simulating how each geometric layout will pattern on a wafer. Edges of structures within the simulated geometric layouts can be classified based on manufacturability and design rules can be created to disallow layouts demonstrating poor manufacturability.
摘要:
The invention includes an apparatus and a method of manufacturing such apparatus including the steps of: forming a layer to be patterned, forming a photosensitive layer over the layer to be patterned, patterning the photosensitive layer to form a pattern including a horizontal line and a vertical line without a space therebetween, transferring the pattern to the layer to be patterned, forming a second photosensitive layer over the pattern, patterning the second photosensitive layer to form a second pattern including a space aligned between the horizontal line and the vertical line, and transferring the second pattern to the layer to be patterned to form a third pattern including a horizontal line and a vertical line with a space therebetween, the space including a width dimension achievable at a resolution limit of lithography.
摘要:
A method includes providing an initial IC device design, which design has a desired set of electrical characteristics. A layout representation corresponding to the initial device design is generated. A simulation tool is used to determine whether the layout representation corresponds to an IC device design having the desired electrical characteristics. In addition, the variation between structures within IC device designed due to process variations is evaluated using the simulation tool. This variation can be used to determine whether the design is optimized.
摘要:
A method of producing a layout representation corresponding to an integrated circuit (IC) device design can include generating an initial layout representation in accordance with a predetermined set of design rules and simulating how structures within the initial layout representation will pattern on a wafer. Based on the simulation, portions of the layout representation, which include structures demonstrating poor manufacturability and/or portions of the layout representation in which extra manufacturability margin is present, can be identified. Portions of the layout representation including structures demonstrating poor manufacturability and/or in which extra manufacturability margin is present can be modified to optimize the layout representation.