Hybrid magnetic/electrostatic deflector for ion implantation systems
    3.
    发明授权
    Hybrid magnetic/electrostatic deflector for ion implantation systems 有权
    用于离子注入系统的混合磁/静电偏转器

    公开(公告)号:US06881966B2

    公开(公告)日:2005-04-19

    申请号:US10461702

    申请日:2003-06-13

    摘要: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

    摘要翻译: 公开了用于离子束的磁偏转器,并且包括第一和第二线圈。 线圈分别位于梁的上方和下方,并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场,其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面,公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性,并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

    Electrostatic lens for ion beams
    4.
    发明授权
    Electrostatic lens for ion beams 有权
    离子束静电透镜

    公开(公告)号:US07112809B2

    公开(公告)日:2006-09-26

    申请号:US10894209

    申请日:2004-07-19

    IPC分类号: H01J37/317

    CPC分类号: H01J37/12 H01J37/3171

    摘要: A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure.

    摘要翻译: 用于离子束注入机的透镜结构。 透镜结构包括沿离子运动方向间隔开的第一和第二电极。 透镜结构横跨离子束的宽度延伸,用于偏离进入透镜结构的离子。 透镜结构包括用于减速的第一电极和用于加速离子的第二电极。 透镜结构模式控制器选择性地激活加速或减速电极以使离子进入透镜结构以期望的轨迹离开所述透镜结构,而不管轨迹离子进入透镜结构。

    Electrostatic parallelizing lens for ion beams
    5.
    发明授权
    Electrostatic parallelizing lens for ion beams 有权
    离子束静电平行化透镜

    公开(公告)号:US06774377B1

    公开(公告)日:2004-08-10

    申请号:US10607239

    申请日:2003-06-26

    IPC分类号: H01J37317

    CPC分类号: H01J37/3171 H01J37/12

    摘要: A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends on opposite sides of a beam path across a width of the ion beam for deflecting ions entering the lens structure. The lens structure include a first electrode for decelerating ions and a second electrode for accelerating the ions to cause ions entering the lens structure to exit said lens structure with approximately the same exit trajectory regardless of the trajectory ions enter the lens structure. In an alternate construction the lens structure can include a first electrode for accelerating ions and a second electrode for decelerating ions.

    摘要翻译: 用于离子束注入机的透镜结构。 透镜结构包括沿离子运动方向间隔开的第一和第二电极。 透镜结构在离子束的宽度上的光束路径的相对侧上延伸,用于偏转进入透镜结构。 透镜结构包括用于减速离子的第一电极和用于加速离子的第二电极,使离子进入透镜结构以离开所述透镜结构以大致相同的出射轨迹,而与轨迹离子进入透镜结构无关。 在替代结构中,透镜结构可以包括用于加速离子的第一电极和用于减速离子的第二电极。

    Methods and systems for trapping ion beam particles and focusing an ion beam
    7.
    发明授权
    Methods and systems for trapping ion beam particles and focusing an ion beam 有权
    用于捕获离子束粒子并聚焦离子束的方法和系统

    公开(公告)号:US07598495B2

    公开(公告)日:2009-10-06

    申请号:US11739934

    申请日:2007-04-25

    IPC分类号: H01J3/18

    摘要: A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.

    摘要翻译: 一种用于离子注入的聚焦粒子捕获系统,包括产生离子束的离子束源,接收来自离子束源的离子束的束线组件,该束束组件包括选择性地通过选定离子的质量分析器,接收 离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒,其中入口电极的第一表面背离中心电极并且近似平坦,其中第二表面 所述入口电极面向所述中心电极并且是凹形的,其中所述中心电极位于与所述入口电极的下游距离的位置,所述入口电极包括中心孔并被偏压到中心电压,其中所述中心电压小于所述第一基极电压, 其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex,其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦,所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压,并且其中所述第一表面 所述出射电极的面向所述中心电极并且近似平坦,其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦,其中从所述入射电极朝向所述中心电极产生第一静电场 并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压,以及在所述束线组件的下游并接收所述离子束的端站。

    Method for in-process cleaning of an ion source
    8.
    发明授权
    Method for in-process cleaning of an ion source 失效
    离子源过程中清洗方法

    公开(公告)号:US6135128A

    公开(公告)日:2000-10-24

    申请号:US49642

    申请日:1998-03-27

    摘要: A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas. The disassociated and ionized constituents of said cleaning gas react with said disassociated and ionized constituents of said dopant gas to prevent formation of deposits of elements contained within said ionizable dopant gas on surfaces of said chamber walls. The cleaning gas may be, for example, nitrogen trifluoride (NF.sub.3), and the ionizable dopant gas may be, for example, either phosphine (PH.sub.3) or arsine (AsH.sub.3). Mass flow controllers control the ratio of cleaning gas to ionizable dopant gas introduced into said plasma chamber, which is greater than 0:1 and preferably at least 3:1.

    摘要翻译: 提供了一种用于在过程中清洁离子源(12)的方法和系统。 离子源(12)包括(i)由结合电离区(120)的室壁(112,114,116)形成的等离子体室(22); (ii)可电离掺杂剂气体源(66)和用于将所述可电离掺杂剂气体引入所述等离子体室的第一机构(68) (iii)用于将所述清洁气体引入所述等离子体室的清洁气体源(182)和第二机构(184); 和(iv)至少部分地设置在所述腔室内的激励器(130),用于向所述可电离掺杂剂气体和所述清洁气体赋予能量以在所述等离子体腔室内产生等离子体。 所述等离子体包括所述掺杂气体的分离和离子化成分以及所述清洁气体的解离和离子化成分。 所述清洁气体的分离和离子化的组分与所述掺杂剂气体的所述分离和离子化的组分反应,以防止在所述室壁的表面上形成包含在所述可电离掺杂剂气体内的元素沉积物。 清洁气体可以是例如三氟化氮(NF 3),并且可电离掺杂剂气体可以是例如磷化氢(PH 3)或胂(AsH 3)。 质量流量控制器控制导入所述等离子体室的清洁气体与可离子化掺杂剂气体的比例大于0:1,优选至少3:1。

    Ribbon beam ion implanter cluster tool
    9.
    发明授权
    Ribbon beam ion implanter cluster tool 有权
    丝带束离子注入机群集工具

    公开(公告)号:US07375355B2

    公开(公告)日:2008-05-20

    申请号:US11432977

    申请日:2006-05-12

    IPC分类号: H01J37/317

    摘要: An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.

    摘要翻译: 提供了用于将离子注入到工件中的离子注入簇工具,其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。 多个离子束线组件中的每一个与公共处理室选择性地隔离,并且多个束线在处理室的处理区域相交。 定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个,并且公共处理室内的常见剂量测量装置可操作以测量一个 或更多的多个离子束线中的每一个的性质。 负载锁定室可操作地联接到公共处理室,用于在公共处理室和外部环境之间交换工件。

    Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement
    10.
    发明授权
    Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement 有权
    电感耦合等离子体喷枪采用浸入式低电感FR线圈和多脉冲磁排列

    公开(公告)号:US08471476B2

    公开(公告)日:2013-06-25

    申请号:US12901198

    申请日:2010-10-08

    IPC分类号: H05B31/26 H01J37/317

    摘要: A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.

    摘要翻译: 公开了一种用于提供电感耦合的射频等离子体喷枪的装置。 在一个特定的示例性实施例中,该装置是离子注入系统中的等离子体喷枪。 等离子体喷枪可以包括具有一个或多个孔的等离子体室; 能够向所述等离子体室供给至少一种气态物质的气体源; 设置在等离子体室内的单匝线圈和耦合到线圈的电源,用于感应耦合射频电力以激发等离子体室中的至少一种气态物质以产生等离子体。 等离子体室的内表面可以不含含金属的材料,并且等离子体可能不暴露于等离子体室内的任何含金属的组分。 等离子体室可以包括用于控制等离子体的多个磁体。 可以在等离子体室中设置出口孔,以使所得到的等离子体的带负电粒子能够接合作为相关离子注入系统的一部分的离子束。 在一个实施例中,磁体设置在孔的相对侧上,并用于操纵等离子体的电子。