Hybrid magnetic/electrostatic deflector for ion implantation systems
    3.
    发明授权
    Hybrid magnetic/electrostatic deflector for ion implantation systems 有权
    用于离子注入系统的混合磁/静电偏转器

    公开(公告)号:US06881966B2

    公开(公告)日:2005-04-19

    申请号:US10461702

    申请日:2003-06-13

    摘要: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

    摘要翻译: 公开了用于离子束的磁偏转器,并且包括第一和第二线圈。 线圈分别位于梁的上方和下方,并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场,其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面,公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性,并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

    Electrostatic lens for ion beams
    4.
    发明授权
    Electrostatic lens for ion beams 有权
    离子束静电透镜

    公开(公告)号:US07112809B2

    公开(公告)日:2006-09-26

    申请号:US10894209

    申请日:2004-07-19

    IPC分类号: H01J37/317

    CPC分类号: H01J37/12 H01J37/3171

    摘要: A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure.

    摘要翻译: 用于离子束注入机的透镜结构。 透镜结构包括沿离子运动方向间隔开的第一和第二电极。 透镜结构横跨离子束的宽度延伸,用于偏离进入透镜结构的离子。 透镜结构包括用于减速的第一电极和用于加速离子的第二电极。 透镜结构模式控制器选择性地激活加速或减速电极以使离子进入透镜结构以期望的轨迹离开所述透镜结构,而不管轨迹离子进入透镜结构。

    Electrostatic parallelizing lens for ion beams
    5.
    发明授权
    Electrostatic parallelizing lens for ion beams 有权
    离子束静电平行化透镜

    公开(公告)号:US06774377B1

    公开(公告)日:2004-08-10

    申请号:US10607239

    申请日:2003-06-26

    IPC分类号: H01J37317

    CPC分类号: H01J37/3171 H01J37/12

    摘要: A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends on opposite sides of a beam path across a width of the ion beam for deflecting ions entering the lens structure. The lens structure include a first electrode for decelerating ions and a second electrode for accelerating the ions to cause ions entering the lens structure to exit said lens structure with approximately the same exit trajectory regardless of the trajectory ions enter the lens structure. In an alternate construction the lens structure can include a first electrode for accelerating ions and a second electrode for decelerating ions.

    摘要翻译: 用于离子束注入机的透镜结构。 透镜结构包括沿离子运动方向间隔开的第一和第二电极。 透镜结构在离子束的宽度上的光束路径的相对侧上延伸,用于偏转进入透镜结构。 透镜结构包括用于减速离子的第一电极和用于加速离子的第二电极,使离子进入透镜结构以离开所述透镜结构以大致相同的出射轨迹,而与轨迹离子进入透镜结构无关。 在替代结构中,透镜结构可以包括用于加速离子的第一电极和用于减速离子的第二电极。

    Ion implantation beam angle calibration
    6.
    发明授权
    Ion implantation beam angle calibration 有权
    离子注入束角校准

    公开(公告)号:US07329882B2

    公开(公告)日:2008-02-12

    申请号:US11288908

    申请日:2005-11-29

    IPC分类号: H01J37/304 H01J37/317

    摘要: One or more aspects of the present invention pertain to determining a relative orientation between an ion beam and lattice structure of a workpiece into which ions are to be selectively implanted by the ion beam, and calibrating an ion implantation system in view of the relative orientation. The beam to lattice structure orientation is determined, at least in part, by directing a divergent ion beam at the workpiece and finding the angle of the aspect of the divergent beam that implants ions substantially parallel to crystal planes of the workpiece, and thus causes a small amount of damage to the lattice structure.

    摘要翻译: 本发明的一个或多个方面涉及确定离子束和工件的晶格结构之间的相对取向,离子将被离子束选择性地注入到其中,并且考虑到相对取向校准离子注入系统。 至少部分地通过将发散离子束引导到工件处并找到将基本上平行于工件的晶面的离子注入的发散光束的方面的角度来确定光束到晶格结构取向,并因此导致 对晶格结构的损害小。

    HEATED ELECTROSTATIC CHUCK INCLUDING MECHANICAL CLAMP CAPABILITY AT HIGH TEMPERATURE
    7.
    发明申请
    HEATED ELECTROSTATIC CHUCK INCLUDING MECHANICAL CLAMP CAPABILITY AT HIGH TEMPERATURE 有权
    加热静电夹钳,包括机械夹紧能力在高温下

    公开(公告)号:US20110299217A1

    公开(公告)日:2011-12-08

    申请号:US13152735

    申请日:2011-06-03

    IPC分类号: H01L21/687

    CPC分类号: H01L21/68728 H01L21/6831

    摘要: An electrostatic clamp is provided, having a clamping plate, wherein a clamping surface of the clamping plate is configured to contact the workpiece. A voltage applied to one or more electrodes selectively electrostatically attracts the workpiece to the clamping surface. One or more auxiliary clamping members are further provided wherein the one or more auxiliary clamping members are configured to selectively secure at least a portion of the workpiece to the clamping surface. A temperature monitoring device configured to determine a temperature of the workpiece is provided, and a controller is configured to selectively clamp the workpiece to the clamping surface via a control of the voltage to the one or more electrodes and the one or more auxiliary clamping members, based, at least in part, on the temperature of the workpiece.

    摘要翻译: 提供了一种具有夹板的静电夹具,其中夹持板的夹紧表面构造成接触工件。 施加到一个或多个电极的电压选择性地静电将工件吸引到夹紧表面。 还提供了一个或多个辅助夹紧构件,其中一个或多个辅助夹紧构件构造成选择性地将至少一部分工件固定到夹紧表面。 提供了一种被配置为确定工件的温度的温度监视装置,并且控制器被配置为经由对一个或多个电极和一个或多个辅助夹紧构件的电压的控制来选择性地将工件夹紧到夹紧表面, 至少部分地基于工件的温度。

    Heated annulus chuck
    8.
    发明授权
    Heated annulus chuck 有权
    加热环形卡盘

    公开(公告)号:US08797706B2

    公开(公告)日:2014-08-05

    申请号:US13154836

    申请日:2011-06-07

    IPC分类号: H01L21/687

    CPC分类号: H01L21/68728 H01L21/6831

    摘要: A clamping device and method is provided for securing first and second workpieces having different sizes to a clamping device and providing thermal conditioning thereto. An electrostatic clamping plate having a diameter associated with the first workpiece surrounds a central portion of the clamp. A non-electrostatic central portion provides a heater within the annulus, wherein the central portion has a diameter associated with the second workpiece. A workpiece carrier is provided, wherein the workpiece carrier is configured to hold the second workpiece above the heater, and wherein a diameter of the workpiece carrier is associated with the electrostatic clamping plate annulus. The annulus selectively electrostatically clamps the workpiece carrier or a circumferential portion of the first workpiece to its clamping surface, therein selectively maintaining a position of the first or second workpiece with respect to the annulus or non-electrostatic central portion.

    摘要翻译: 提供一种夹紧装置和方法,用于将具有不同尺寸的第一和第二工件固定到夹紧装置并且向其提供热调节。 具有与第一工件相关联的直径的静电夹持板围绕夹具的中心部分。 非静电中心部分在环形空间内提供加热器,其中中心部分具有与第二工件相关联的直径。 提供了工件载体,其中工件载体构造成将第二工件保持在加热器上方,并且其中工件载体的直径与静电夹持板环相关联。 环形空间选择性地将工件载体或第一工件的圆周部分夹持到其夹紧表面,其中选择性地保持第一或第二工件相对于环形或非静电中心部分的位置。

    HEATED ANNULUS CHUCK
    9.
    发明申请
    HEATED ANNULUS CHUCK 有权
    加热肛门栓

    公开(公告)号:US20110299218A1

    公开(公告)日:2011-12-08

    申请号:US13154836

    申请日:2011-06-07

    IPC分类号: H01L21/687

    CPC分类号: H01L21/68728 H01L21/6831

    摘要: A clamping device and method is provided for securing first and second workpieces having different sizes to a clamping device and providing thermal conditioning thereto. An electrostatic clamping plate having a diameter associated with the first workpiece surrounds a central portion of the clamp. A non-electrostatic central portion provides a heater within the annulus, wherein the central portion has a diameter associated with the second workpiece. A workpiece carrier is provided, wherein the workpiece carrier is configured to hold the second workpiece above the heater, and wherein a diameter of the workpiece carrier is associated with the electrostatic clamping plate annulus. The annulus selectively electrostatically clamps the workpiece carrier or a circumferential portion of the first workpiece to its clamping surface, therein selectively maintaining a position of the first or second workpiece with respect to the annulus or non-electrostatic central portion.

    摘要翻译: 提供一种夹紧装置和方法,用于将具有不同尺寸的第一和第二工件固定到夹紧装置并且向其提供热调节。 具有与第一工件相关联的直径的静电夹持板围绕夹具的中心部分。 非静电中心部分在环形空间内提供加热器,其中中心部分具有与第二工件相关联的直径。 提供了工件载体,其中工件载体构造成将第二工件保持在加热器上方,并且其中工件载体的直径与静电夹持板环相关联。 环形空间选择性地将工件载体或第一工件的圆周部分夹持到其夹紧表面,其中选择性地保持第一或第二工件相对于环形或非静电中心部分的位置。

    Controlled dose ion implantation
    10.
    发明授权
    Controlled dose ion implantation 有权
    受控剂量离子注入

    公开(公告)号:US07982195B2

    公开(公告)日:2011-07-19

    申请号:US10940263

    申请日:2004-09-14

    IPC分类号: G21K5/10

    摘要: An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.

    摘要翻译: 一种离子注入机,用于通过具有扫描装置来产生色带或带状光束,该扫描装置产生由源发射的离子的侧面扫描以提供移动到注入室中的薄的离子束。 工件支撑件将工件定位在注入室内,并且驱动器通过垂直于带平面的离子的薄带离子将工件支撑件上下移动,以实现对工件的受控梁加工。 控制器包括耦合到所述扫描装置的第一控制输出,以将离子束的侧向扫描的范围限制为小于最大量,从而限制工件到工件的指定区域的离子处理和第二控制 耦合到驱动器的输出同时将工件的上下移动范围限制为小于最大量并且使离子束冲击工件的受控部分。