-
公开(公告)号:US10038298B2
公开(公告)日:2018-07-31
申请号:US15829151
申请日:2017-12-01
IPC分类号: H01S5/00 , H01S5/20 , H01S5/22 , H01S5/02 , H01S5/10 , H01S5/343 , H01S5/12 , H01S5/223 , G01R31/26 , H01S5/028
CPC分类号: H01S5/0014 , G01R31/26 , G01R31/2635 , H01S5/0042 , H01S5/0201 , H01S5/0203 , H01S5/028 , H01S5/0287 , H01S5/1014 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/34306 , H01S5/34313 , H01S5/34333
摘要: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
-
公开(公告)号:US09692202B2
公开(公告)日:2017-06-27
申请号:US14535590
申请日:2014-11-07
CPC分类号: H01S5/0071 , G02B6/305 , G02B6/34 , G02B6/4214 , G02B27/0983 , H01S5/02252 , H01S5/02292 , H01S5/026 , H01S5/1014 , H01S5/18 , H01S2301/185
摘要: A reflective surface is disclosed in conjunction with a semiconductor laser to shape a laser beam and modify a direction of the laser beam. The reflective surface may be formed on a structure disposed adjacent to a laser structure to allow high coupling of laser light to, for example, a silicon photonics chip or an optical fiber.
-
公开(公告)号:US09893488B2
公开(公告)日:2018-02-13
申请号:US14595848
申请日:2015-01-13
IPC分类号: H01S5/00 , H01S5/20 , H01S5/22 , G01R31/26 , H01S5/10 , H01S5/12 , H01S5/223 , H01S5/343 , H01S5/02 , H01S5/028
CPC分类号: H01S5/0014 , G01R31/26 , G01R31/2635 , H01S5/0042 , H01S5/0201 , H01S5/0203 , H01S5/028 , H01S5/0287 , H01S5/1014 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/34306 , H01S5/34313 , H01S5/34333
摘要: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
-
公开(公告)号:US09865993B2
公开(公告)日:2018-01-09
申请号:US15160895
申请日:2016-05-20
IPC分类号: H01S5/00 , H01S5/30 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/22 , H01S5/343 , H01S5/10 , B82Y20/00 , H01S5/028
CPC分类号: H01S5/3013 , B82Y20/00 , H01S5/0207 , H01S5/0217 , H01S5/02212 , H01S5/02236 , H01S5/02248 , H01S5/02284 , H01S5/0267 , H01S5/0287 , H01S5/1085 , H01S5/22 , H01S5/34326 , H01S2301/18
摘要: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
-
公开(公告)号:US09859687B2
公开(公告)日:2018-01-02
申请号:US15160888
申请日:2016-05-20
IPC分类号: H01S5/00 , H01S5/30 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/22 , H01S5/343 , H01S5/10 , B82Y20/00 , H01S5/028
CPC分类号: H01S5/3013 , B82Y20/00 , H01S5/0207 , H01S5/0217 , H01S5/02212 , H01S5/02236 , H01S5/02248 , H01S5/02284 , H01S5/0267 , H01S5/0287 , H01S5/1085 , H01S5/22 , H01S5/34326 , H01S2301/18
摘要: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
-
公开(公告)号:US09660419B2
公开(公告)日:2017-05-23
申请号:US14296139
申请日:2014-06-04
发明人: Alex A. Behfar
CPC分类号: H01S5/323 , G02F1/17 , H01S5/0042 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/0282 , H01S5/16 , H01S5/22 , H01S5/2214
摘要: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
-
公开(公告)号:US09653884B2
公开(公告)日:2017-05-16
申请号:US14296144
申请日:2014-06-04
发明人: Alex A. Behfar
CPC分类号: H01S5/323 , G02F1/17 , H01S5/0042 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/0282 , H01S5/16 , H01S5/22 , H01S5/2214
摘要: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
-
公开(公告)号:US10103518B2
公开(公告)日:2018-10-16
申请号:US14296180
申请日:2014-06-04
发明人: Alex A. Behfar
摘要: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
-
公开(公告)号:US10103517B2
公开(公告)日:2018-10-16
申请号:US14296162
申请日:2014-06-04
发明人: Alex A. Behfar
摘要: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
-
公开(公告)号:US10044168B2
公开(公告)日:2018-08-07
申请号:US15829133
申请日:2017-12-01
IPC分类号: H01S5/00 , H01S5/20 , H01S5/22 , H01S5/02 , H01S5/10 , H01S5/343 , H01S5/12 , H01S5/223 , G01R31/26 , H01S5/028
摘要: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
-
-
-
-
-
-
-
-
-