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41 条记录 (耗时 0.015 秒)

    Circuit for driving a switching transistor
    2.
    发明授权
    Circuit for driving a switching transistor 失效
    用于驱动开关晶体管的电路

    公开(公告)号：US4481431A

    公开(公告)日：1984-11-06

    申请号：US601735

    申请日：1984-04-19

    申请人： Hisao Nishino ,  Shigeru Kondo

    发明人： Hisao Nishino ,  Shigeru Kondo

    IPC分类号： H03K17/04 ,  H03K17/00 ,  H03K17/0424 ,  H03K17/60 ,  H03K17/61 ,  H03K3/33

    CPC分类号： H03K17/601 ,  H03K17/0424 ,  H03K2217/0036

    摘要： A circuit for driving a switching transistor which includes a driving pulse transformer having a primary winding to which a switching pulse is applied, a secondary winding connected to the base and the emitter of the switching transistor to turn on the switching transistor by the switching pulse applied to the primary winding, and a third winding. The third winding is connected to the emitter or the collector of the switching transistor so that the current flowing through the switching transistor of the on-condition flows through the third winding and induces a current on the secondary winding which is inverse to a current induced on the secondary winding by the switching pulse applied to the primary winding. The base-storaged carrier is rapidly drawn out after lapse of the switching pulse so that power dissipation is considerably reduced and high speed switching operation can be effected.

    摘要翻译： 一种用于驱动开关晶体管的电路，包括具有施加开关脉冲的初级绕组的驱动脉冲变压器，连接到开关晶体管的基极和发射极的次级绕组，以通过施加的开关脉冲导通开关晶体管 到初级绕组和第三绕组。 第三绕组连接到开关晶体管的发射极或集电极，使得流过导通状态的开关晶体管的电流流过第三绕组，并且在次级绕组上产生与所感应的电流相反的电流 次级绕组由开关脉冲施加到初级绕组。 经过开关脉冲之后，基本存储的载体被快速地拉出，使得功率消耗大大降低，并且可以实现高速切换操作。

    Drive circuit for a gated semiconductor switching device and method for driving a gated semiconductor switching device
    5.
    发明授权
    Drive circuit for a gated semiconductor switching device and method for driving a gated semiconductor switching device 有权
    用于门控半导体开关器件的驱动电路和用于驱动门控半导体开关器件的方法

    公开(公告)号：US09344063B2

    公开(公告)日：2016-05-17

    申请号：US14238697

    申请日：2012-08-10

    申请人： Robert Richardson

    发明人： Robert Richardson

    IPC分类号： H03K3/00 ,  H03K3/012 ,  H03K17/0424 ,  H03K17/16

    CPC分类号： H03K3/012 ,  H03K17/0424 ,  H03K17/166

    摘要： Drive circuit and method for a gated semiconductor switching device A drive circuit and method for a gated semiconductor switching device (10) comprising providing coupling such as a mutual inductance between a gate drive circuit (21) for the device and a drain to source current supply circuit (22) for the device in order to change a gate voltage provided by the gate drive circuit dependent on a rate of change of a current in the drain to source current supply circuit. The change in gate voltage has a magnitude and phase arranged to increase or decrease a switching speed of the gated semiconductor switching device.

    摘要翻译： 门控半导体开关器件的驱动电路和方法门控半导体开关器件（10）的驱动电路和方法包括在用于器件的栅极驱动电路（21）和漏 - 源电流源之间提供诸如互感的耦合 电路（22），以便根据栅极驱动电路提供的栅极电压，取决于漏极到源极电流电路中的电流的变化率。 栅极电压的变化具有设置成增加或减小门控半导体开关器件的开关速度的幅度和相位。

    Drive method for switching power converter and apparatus using this method
    6.
    发明授权
    Drive method for switching power converter and apparatus using this method 失效
    使用这种方法切换电源转换器和设备的驱动方法

    公开(公告)号：US4680534A

    公开(公告)日：1987-07-14

    申请号：US843383

    申请日：1986-03-24

    申请人： Yoshio Tanaka ,  Toshihiro Onodera

    发明人： Yoshio Tanaka ,  Toshihiro Onodera

    IPC分类号： H02M1/08 ,  H02M3/155 ,  H03K17/0424 ,  G05F1/56

    CPC分类号： H02M1/08 ,  H02M3/155 ,  H03K17/0424

    摘要： A main switch consisting of a switching transistor and a current transformer is triggered at the leading edge of a main switch drive pulse. The switching transistor then starts a positive feedback operation through the current transformer and is turned on at high speed. Upon activation of the switching transistor, the magnetic core of the current transformer is saturated by the switching transistor emitter current flowing in the current transformer. Magnetic saturation of the core turns off the switching transistor with the magnetic energy stored in the current transformer. The main switch drive pulse falls after the switching transistor is turned off.

    摘要翻译： 在主开关驱动脉冲的前沿触发由开关晶体管和电流互感器组成的主开关。 开关晶体管然后通过电流互感器开始正反馈操作，并以高速开启。 在激活开关晶体管时，电流互感器的磁芯通过在电流互感器中流动的开关晶体管发射极电流饱和。 磁芯的磁饱和使用存储在电流互感器中的磁能关断开关晶体管。 开关晶体管关闭后，主开关驱动脉冲下降。

    Power transistor actuating and bootstrap drive circuit
    7.
    发明授权
    Power transistor actuating and bootstrap drive circuit 失效
    功率晶体管启动和自举驱动电路

    公开(公告)号：US4201928A

    公开(公告)日：1980-05-06

    申请号：US872965

    申请日：1978-01-27

    申请人： Philip W. Koetsch

    发明人： Philip W. Koetsch

    IPC分类号： H03K17/0422 ,  H03K17/0424 ,  H03K17/60 ,  H03K17/64 ,  H03K1/00

    CPC分类号： H03K17/601 ,  H03K17/0422 ,  H03K17/0424 ,  H03K17/64

    摘要： A drive circuit for a power switching transistor, in which an actuating circuit provides a low level gating current to actuate and maintain the transistor in a conductive state, and a bootstrap drive circuit is provided to enable operation over the full load range of the transistor with minimal input power loss. Rapid turn-off is facilitated by means of a deactuating transistor which connects the base of the switching transistor to a negative pull-down voltage level, and which also diverts gating current away from the switching transistor. A shunt circuit is provided in association with the bootstrap circuit to prevent saturation of relatively high gain switching transistors.

    摘要翻译： 一种用于功率开关晶体管的驱动电路，其中致动电路提供低电平门控电流以致启动和保持晶体管处于导通状态，并且提供自举驱动电路以使得能够在晶体管的满载范围内工作， 最小的输入功率损耗。 通过将开关晶体管的基极连接到负的下拉电压电平的去激活晶体管来促进快速关断，并且还使得选通电流远离开关晶体管。 与自举电路相关联地提供分流电路，以防止相对高增益开关晶体管的饱和。

    Semiconductor switch device
    8.
    发明授权
    Semiconductor switch device 失效
    半导体开关器件

    公开(公告)号：US4164667A

    公开(公告)日：1979-08-14

    申请号：US844194

    申请日：1977-10-21

    申请人： Masahiko Akamatsu

    发明人： Masahiko Akamatsu

    IPC分类号： H03K17/0424 ,  H03K17/60

    CPC分类号： H03K17/601 ,  H03K17/0424

    摘要： A semiconductor switch device includes a semiconductor switch with a control electrode disposed serially in a power path connecting a DC power source and a load; a current transformer having a core and having a primary conductor for passing current in response to a turn-on of the semiconductor switch and a secondary winding connected to the control electrode of the semiconductor switch; and a magnetizing force applicator for magnetizing the core of the current transformer in the direction opposite to the magnetization generated by current flowing in the primary conductor.

    摘要翻译： 半导体开关装置包括：半导体开关，其具有串联设置在连接DC电源和负载的电源路径中的控制电极; 电流互感器，其具有芯并且具有用于响应于所述半导体开关的导通而使电流通过的主导体和连接到所述半导体开关的控制电极的次级绕组; 以及磁化力施加器，用于沿与在主导体中流动的电流产生的磁化相反的方向磁化电流互感器的磁芯。

    Transistor switching circuit
    9.
    发明授权
    Transistor switching circuit 失效
    晶体管开关电路

    公开(公告)号：US4123670A

    公开(公告)日：1978-10-31

    申请号：US747983

    申请日：1978-12-06

    申请人： Werner Pollmeier

    发明人： Werner Pollmeier

    IPC分类号： H03K17/04 ,  H02M1/08 ,  H02M3/155 ,  H02M3/337 ,  H02M7/155 ,  H02M7/217 ,  H02M7/538 ,  H02M7/5381 ,  H03K17/0424 ,  H03K17/60 ,  H03K17/61 ,  H03K17/00

    CPC分类号： H02M7/5381 ,  H02M1/08 ,  H02M3/155 ,  H02M3/3372 ,  H02M7/1555 ,  H02M7/2173 ,  H03K17/0424 ,  H03K17/601

    摘要： A transistor switching circuit arrangement for switching at least one switching transistor on and off wherein, in order to achieve low power dissipation by delaying the change which occurs in base current to the cut-off value on conversion into the blocked state and by a subsequent brief disruptive operation of the base emitter section and in order to achieve fast switching on, there is provided a choke coil through part of which the base-emitter current of said switching transistor is fed and through part of which the current being switched is passed in positive feedback mode.

    摘要翻译： 一种用于开关至少一个开关晶体管导通和截止的晶体管开关电路装置，其中为了通过将基极电流中发生的变化延迟到转换成阻塞状态的截止值以及随后的简短实现来实现低功耗 基极发射极部分的破坏性操作，为了实现快速接通，提供了一种扼流线圈，其中一部分由所述开关晶体管的基极 - 发射极电流馈送，并且其中正在切换的电流的一部分通过正极 反馈模式。