公开(公告)号：US11629431B2

公开(公告)日：2023-04-18

申请号：US17551265

申请日：2021-12-15

申请人： Beihang University

发明人： Lidong Zhao ,  Bingchao Qin ,  Xiao Zhang

IPC分类号： C30B9/04 ,  C30B29/46 ,  C09K5/14

摘要： The present disclosure relates to P-type SnSe crystal capable of being used as thermoelectric refrigeration material and a preparation method thereof. The material is a Na-doped and Pb-alloyed SnSe crystal. A molar ratio of Sn, Se, Pb and Na is (1-x-y):1:y:x, where 0.015≤x≤0.025 and 0.05≤y≤0.11. The P-type SnSe crystal provided by the present disclosure is capable of being used as the thermoelectric refrigeration material. A power factor PF of the P-type SnSe crystal at a room temperature is ≥70 μWcm−1K−2, and ZT at the room temperature is ≥1.2. A single-leg temperature difference measurement platform built on the basis of the obtained SnSe crystal may realize a refrigeration temperature difference of 17.6 K at a current of 2 A. The present disclosure adopts a modified directional solidification method and uses a continuous temperature region for slow cooling to grow a crystal to obtain the large-sized high-quality SnSe crystal.

公开(公告)号：US20190055668A1

公开(公告)日：2019-02-21

申请号：US16090087

申请日：2016-12-28

申请人： Suzhou Institute of Nano- Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences

发明人： Kai Zhang ,  Yuegang Zhang ,  Yijun Xu

IPC分类号： C30B29/02 ,  H01L31/09 ,  H01L31/0264 ,  C01B25/02 ,  C30B9/04

摘要： A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal having a high photoelectric response rate is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 Å, b=10.4-10.6 Å, c=4.3-4.5 Å, and an interlayer spacing of 4-6 Å, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. Its preparation method is simple with a mild condition, a high yield, a low cost, and less pollution. The two-dimensional black phosphorus PN junction comprises a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties, such as a unidirectional conductivity, or a special photovoltaic effect. The preparation method is simple, and efficient with a good repeatability, and is compatible with a conventional semiconductor technology. The black phosphorus crystal and the two-dimensional black phosphorus PN junction according to the disclosure have extensive application prospects in photoelectric and electronic fields.

公开(公告)号：US09187845B2

公开(公告)日：2015-11-17

申请号：US13505632

申请日：2010-11-03

申请人： Philippe Veber ,  Matias Velazquez ,  Jean-Pierre Chaminade ,  Oudomsack Viraphong

发明人： Philippe Veber ,  Matias Velazquez ,  Jean-Pierre Chaminade ,  Oudomsack Viraphong

IPC分类号： C09K5/00 ,  C30B29/22 ,  C30B9/00 ,  C30B9/04 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B19/06 ,  C30B29/24 ,  C30B15/14

CPC分类号： C30B29/22 ,  C30B9/00 ,  C30B9/04 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B19/062 ,  C30B29/24

摘要： A method is provided for preparing solid or thin-film single-crystals of cubic sesquioxides (space group no. 206, Ia-3) of scandium, yttrium or rare earth elements doped with lanthanide ions with valence +III, using a high-temperature flux growth technique, and to the various uses of the single-crystals obtained according to said method, in particular in the field of optics.

摘要翻译： 提供了一种用于制备掺杂有镧系元素离子的钪，钇或稀土元素的立方倍半氧化物（空间群206，Ia-3）的固体或薄膜单晶的方法，使用高温 助熔剂生长技术，以及根据所述方法获得的单晶的各种用途，特别是在光学领域。

公开(公告)号：US08273176B2

公开(公告)日：2012-09-25

申请号：US13158626

申请日：2011-06-13

申请人： Scott Nichol

发明人： Scott Nichol

IPC分类号： C30B9/04 ,  C30B9/06 ,  C30B9/10 ,  C30B27/02 ,  C30B28/10 ,  C01B33/037

CPC分类号： C01B33/037 ,  C30B9/10 ,  C30B29/06

摘要： Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid.

摘要翻译： 本发明的实施例涉及从硅获得硅晶体的方法。 该方法包括使硅粉与溶剂金属接触以提供含有硅的混合物，在浸没下熔化硅以提供第一熔融液体，使第一熔融液体与第一气体接触以提供浮渣和第二熔融液体，分离渣 和第二熔液，冷却第二熔液以形成第一硅晶体和第一母液，并分离第一硅晶体和第一母液。

公开(公告)号：US20120111265A1

公开(公告)日：2012-05-10

申请号：US13269706

申请日：2011-10-10

申请人： Theodore Alekel

发明人： Theodore Alekel

IPC分类号： C30B9/04 ,  C30B11/00

CPC分类号： C30B9/12 ,  C04B35/01 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3409 ,  C09K11/778 ,  C30B9/06 ,  C30B11/00 ,  C30B29/22 ,  G02F1/3551

摘要： A nonlinear optical crystal having a chemical formula of YiLajAlkB16O48, where 2.8≦i≦3.2, 0.8≦j≦1.2, i and j sum to about four, and k is about 12 is provided. The nonlinear optical crystal is useful for nonlinear optical applications including frequency conversion. Nonlinear optical crystals in a specific embodiment are characterized by UV blocking materials (e.g., some transition metals and lanthanides) at concentrations of less than 1,000 parts per million, providing high transmittance over portions of the UV spectrum (e.g., 175-360 nm).

摘要翻译： 具有化学式为YiLajAlkB16O48的非线性光学晶体，其中2.8和nlE; i＆nlE; 3.2,0.8和nlE; j＆nlE; 1.2，i和j总和为大约4，并且k为约12。 非线性光学晶体对于包括变频的非线性光学应用是有用的。 在特定实施例中的非线性光学晶体的特征在于以小于1,000ppm的紫外线阻挡材料（例如一些过渡金属和镧系元素），在紫外光谱（例如175-360nm）的部分上提供高透射率。

公开(公告)号：US20110203516A1

公开(公告)日：2011-08-25

申请号：US13028272

申请日：2011-02-16

申请人： Sylvain PALTRIER ,  Thierry MIGUET

发明人： Sylvain PALTRIER ,  Thierry MIGUET

IPC分类号： C30B9/04

CPC分类号： C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B11/006 ,  C30B29/48

摘要： A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling. Also including: increasing, within the charge, proportion of one constituent beyond the stoichiometric proportions of the material, thereby defining an excess of the one constituent; subjecting the entire sealed ampoule to a temperature higher than or equal to fusion temperature of the material; subjecting the ampoule to a low temperature gradient and to a gradual drop in temperature, to induce crystallization of the resulting material in liquid form, in stoichiometric proportion; subjecting part of the ampoule where the crystallized material is not present, to a significant drop in temperature modifying vapor pressure state of the excess to a saturated vapor state; and cooling the whole assembly down to ambient temperature.

摘要翻译： 一种结晶化合物半导体材料的制造方法，其特征在于，通过将构成电荷的基本形式的组分的熔融和相互反应合成所述材料到密封的安瓿中，然后通过冷却将所得材料结晶成液态。 还包括：在电荷内增加一种组分超过材料的化学计量比例的比例，从而限定一种组分的过量; 使整个密封的安瓿处于高于或等于材料的熔化温度的温度; 使安瓿处于低温梯度并逐渐降低温度，以化学计量比使所得材料以液体形式结晶; 使结晶物质不存在的安瓿的一部分，使过量的温度改变蒸气压状态的显着下降到饱和蒸汽状态; 并将整个组件冷却至环境温度。

公开(公告)号：US20090050050A1

公开(公告)日：2009-02-26

申请号：US12126334

申请日：2008-05-23

申请人： Glen A. Slack ,  Sandra B. Schujman

发明人： Glen A. Slack ,  Sandra B. Schujman

IPC分类号： H01B1/06 ,  C30B9/04

CPC分类号： C30B29/403 ,  C30B13/02 ,  C30B13/10

摘要： Single-crystal materials are fabricated from a melt at temperatures below their melting points.

摘要翻译： 单晶材料在低于其熔点的温度下由熔体制成。

公开(公告)号：US20220190228A1

公开(公告)日：2022-06-16

申请号：US17551072

申请日：2021-12-14

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  Pusan National University Industry-University Cooperation Foundation

发明人： Hyejin RYU ,  Choongyu HWANG ,  Kyoo KIM

IPC分类号： H01L35/34 ,  H01L35/16 ,  C30B29/52 ,  C30B9/04

摘要： Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn2+ and Se2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn1−xSe (where 0

公开(公告)号：US20200010973A1

公开(公告)日：2020-01-09

申请号：US16494523

申请日：2018-05-30

申请人： LG Chem, Ltd.

发明人： Ho Rim Lee ,  Chan Yeup Chung ,  Manshik Park ,  Jung Min Ko

IPC分类号： C30B9/04 ,  C30B29/36

摘要： The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld  (Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

公开(公告)号：US09388506B2

公开(公告)日：2016-07-12

申请号：US13918721

申请日：2013-06-14

申请人： TOYODA GOSEI CO., LTD.

发明人： Shiro Yamazaki ,  Seiji Nagai ,  Miki Moriyama

IPC分类号： C30B9/00 ,  C30B9/12 ,  C30B29/40 ,  C30B33/00 ,  C30B35/00 ,  C30B9/02 ,  C30B9/04

CPC分类号： C30B9/12 ,  C30B9/02 ,  C30B9/04 ,  C30B29/403 ,  C30B33/00 ,  C30B35/002 ,  Y10T117/1004 ,  Y10T117/1092

摘要： The present invention provides a semiconductor crystal removal apparatus which realizes effective removal of a semiconductor crystal from a crucible through rapid melting of a solidified flux, and a method for producing a semiconductor crystal. The semiconductor crystal removal apparatus includes a crucible support for supporting a crucible so that the opening of the crucible is directed downward; a heater for heating the crucible supported on the crucible support; and a semiconductor crystal receiving net for receiving a semiconductor crystal falling from the opening of the crucible. The semiconductor crystal removal apparatus further includes a determination portion for determining removal of the semiconductor crystal on the basis of a change in weight through falling of the semiconductor crystal.

摘要翻译： 本发明提供一种半导体晶体去除装置，其通过固化的焊剂的快速熔化实现了从坩埚中有效去除半导体晶体，以及半导体晶体的制造方法。 半导体晶体去除装置包括用于支撑坩埚的坩埚支撑件，使得坩埚的开口朝向下方; 用于加热支撑在坩埚支架上的坩埚的加热器; 以及用于接收从坩埚的开口落下的半导体晶体的半导体晶体接收网。 半导体晶体去除装置还包括确定部分，用于基于半导体晶体的下降，基于重量变化来确定半导体晶体的去除。