Method of manufacturing a multi-layer PZT microactuator using wafer-level processing

    公开(公告)号:US11588098B2

    公开(公告)日:2023-02-21

    申请号:US16186408

    申请日:2018-11-09

    摘要: A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.

    COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230053303A1

    公开(公告)日:2023-02-16

    申请号:US17791620

    申请日:2020-12-18

    发明人: Shoji AKIYAMA

    摘要: A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.

    Micro-vibration sensor and preparation method thereof

    公开(公告)号:US11456409B2

    公开(公告)日:2022-09-27

    申请号:US16771190

    申请日:2019-10-31

    申请人: JILIN UNIVERSITY

    摘要: A micro-vibration sensor and preparation method thereof. The method includes a metal sheet is coated with first curing material, and first curing material is cured into first cured layer; piezoelectric thin film element is attached to edge of first cured layer; one side, attached with piezoelectric thin film element, of first cured layer is vertically placed into second curing material, and second curing material is cured into second cured layer; and metal sheet is removed to obtain micro-vibration sensor. Due to fact that piezoelectric thin film element is arranged at a crack tip, during micro-vibration, stress in stress field of crack tip is rapidly increased due to crack stress deformation, and stress signal is efficiently converted into electric signal; and micro-vibration sensor has characteristics of being low in detection limit and high in accuracy.

    Metal-insulator metal structure and method of forming the same

    公开(公告)号:US11417723B2

    公开(公告)日:2022-08-16

    申请号:US16445290

    申请日:2019-06-19

    摘要: A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.

    Hybrid structure for a surface acoustic wave device

    公开(公告)号:US11335847B2

    公开(公告)日:2022-05-17

    申请号:US16072587

    申请日:2017-01-17

    申请人: Soitec

    摘要: The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

    Composite substrate and method of manufacturing composite substrate

    公开(公告)号:US11245377B2

    公开(公告)日:2022-02-08

    申请号:US16073063

    申请日:2017-01-06

    摘要: A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.