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公开(公告)号:US11937510B2
公开(公告)日:2024-03-19
申请号:US17037494
申请日:2020-09-29
发明人: Tomohiro Harada , Yuuhei Ueyama
IPC分类号: H01L41/187 , H01L41/047 , H01L41/312 , H01L41/43 , H10N30/072 , H10N30/097 , H10N30/853 , H10N30/87
CPC分类号: H10N30/8536 , H10N30/072 , H10N30/097 , H10N30/871
摘要: A piezoelectric ceramic containing no lead as a constituent element is provided. Coefficient of variation C.V. of grain size of grains contained in the piezoelectric ceramic is 35% or less, and an image quality (IQ) image obtained by analyzing a cross section of the piezoelectric ceramic by an electron backscatter diffraction (EBSD) method shows that at least one of the grains has a grain size of 3 μm to 5 μm and an area ratio of a domain in said at least one of the grains is 85% or more.
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公开(公告)号:US11621690B2
公开(公告)日:2023-04-04
申请号:US16800391
申请日:2020-02-25
发明人: Hironori Fukuhara , Rei Goto , Keiichi Maki
摘要: A method of manufacturing an acoustic wave device is disclosed. The method includes attaching a support layer to a ceramic layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The method also includes bonding a piezoelectric layer to a surface of the ceramic layer. The method further includes forming an interdigital transducer electrode over the piezoelectric layer.
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公开(公告)号:US11588098B2
公开(公告)日:2023-02-21
申请号:US16186408
申请日:2018-11-09
发明人: Christopher Dunn , Peter Hahn
IPC分类号: H01L41/27 , H01L41/338 , H01L41/273 , H01L41/09 , H01L41/053 , H01L41/277 , H01L41/23 , H03H3/08 , H01L41/312
摘要: A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.
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公开(公告)号:US20230053303A1
公开(公告)日:2023-02-16
申请号:US17791620
申请日:2020-12-18
发明人: Shoji AKIYAMA
IPC分类号: H01L41/187 , H01L41/337 , H01L41/312 , H01L41/27
摘要: A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.
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公开(公告)号:US20220399200A1
公开(公告)日:2022-12-15
申请号:US17755812
申请日:2020-11-25
申请人: Soitec
IPC分类号: H01L21/02 , H01L41/053 , H01L21/762 , H01L41/312
摘要: A method for forming a high resistivity handle substrate for a composite substrate comprises: providing a base substrate made of silicon; exposing the base substrate to a carbon single precursor at a pressure below atmospheric pressure to form a polycrystalline silicon carbide layer having a thickness of at least 10 nm on the surface of the base substrate; and then growing a polycrystalline charge trapping layer on the carbon-containing layer.
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公开(公告)号:US11456409B2
公开(公告)日:2022-09-27
申请号:US16771190
申请日:2019-10-31
申请人: JILIN UNIVERSITY
发明人: Zhiwu Han , Kejun Wang , Honglie Song , Junqiu Zhang , Daobing Chen , Linpeng Liu , Binjie Zhang , Tao Sun , Dakai Wang , Changchao Zhang
IPC分类号: H01L41/312 , G01H11/08 , H01L41/297
摘要: A micro-vibration sensor and preparation method thereof. The method includes a metal sheet is coated with first curing material, and first curing material is cured into first cured layer; piezoelectric thin film element is attached to edge of first cured layer; one side, attached with piezoelectric thin film element, of first cured layer is vertically placed into second curing material, and second curing material is cured into second cured layer; and metal sheet is removed to obtain micro-vibration sensor. Due to fact that piezoelectric thin film element is arranged at a crack tip, during micro-vibration, stress in stress field of crack tip is rapidly increased due to crack stress deformation, and stress signal is efficiently converted into electric signal; and micro-vibration sensor has characteristics of being low in detection limit and high in accuracy.
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公开(公告)号:US11417723B2
公开(公告)日:2022-08-16
申请号:US16445290
申请日:2019-06-19
IPC分类号: H01L49/02 , H01L41/312 , H01L41/187
摘要: A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.
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公开(公告)号:US11335847B2
公开(公告)日:2022-05-17
申请号:US16072587
申请日:2017-01-17
申请人: Soitec
发明人: Oleg Kononchuk , Eric Butaud , Eric Desbonnets
IPC分类号: H01L41/312 , H01L41/08 , H03H9/02 , H03H9/00 , H03H3/02
摘要: The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.
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公开(公告)号:US11245377B2
公开(公告)日:2022-02-08
申请号:US16073063
申请日:2017-01-06
发明人: Shoji Akiyama , Masayuki Tanno
IPC分类号: H03H3/08 , H03H9/02 , H01L41/187 , H01L41/312 , H03H3/02 , H03H9/25 , H01L21/86 , H01L41/337
摘要: A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.
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公开(公告)号:US20220015719A1
公开(公告)日:2022-01-20
申请号:US17295127
申请日:2019-11-15
发明人: Jamie WARNER , Martin TWEEDIE , Stuart GILCHRIST , Sean SMART
IPC分类号: A61B5/00 , H01L41/113 , H01L41/193 , H01L41/312 , A61B5/055 , A61B6/03 , A61B6/00 , A61B5/113 , G01T1/24
摘要: Electromagnetically transparent conductive materials, in particular nanomaterials, are used in a sensor along with piezoelectric materials to detect the motion of a subject to provide respiratory and cardiac gating for imaging techniques such as MRI, CT scans and PET.
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