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公开(公告)号：US11371960B2
公开(公告)日：2022-06-28
申请号：US16523255
申请日：2019-07-26
发明人： Yangyang Fu , Peng Zhang , John P. Verboncoeur
摘要： A microscale gas breakdown device includes a first surface and a second surface. The first surface and the second surface define a gap distance. The device includes a perturbation on the first surface or the second surface. The perturbation is defined by a height value and a radius value. The device includes a current source or a voltage source configured to apply a current or a voltage across the first surface and the second surface. In response to the current or the voltage being applied, a resulting discharge travels along a first discharge path in response to being exposed to a high pressure and a second discharge path in response to being exposed to a low pressure.
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公开(公告)号：US20220110206A1
公开(公告)日：2022-04-07
申请号：US17554405
申请日：2021-12-17
申请人： NANCHANG UNIVERSITY
发明人： Huibin Qiu , Donghua Xiao , Xingkun Peng , Yuqing Zhu , Xianyang Zhang , Youlong Yuan , Qilong Cai , Tianyi Hu , Yue Gao , Zhiyi Ming , Jinmao Zhou , Zhenyu Zhou , Sanqiu Liu
IPC分类号： H05H1/00
摘要： A method for measuring an electron nonextensive parameter of a plasma by using nonextensive statistical mechanics and electric probe is provided. The plasma is described by the nonextensive statistical mechanics and establishes a nonextensive single electric probe theory on the basis of this. The electron nonextensive parameter have been measured which cannot be measured by traditional single probe, and obtained more accurate electron temperature, plasma potential, electron density and floating potential than traditional single probe. The nonextensive electric probe plays a role in plasma diagnosis, which will measure the nonextensivity of plasma and improve the diagnostic accuracy of other plasma parameters.
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公开(公告)号：US11049754B2
公开(公告)日：2021-06-29
申请号：US16031321
申请日：2018-07-10
发明人： Seul Ha Myung , Min Joon Park , Hyo Sung Kim , Kyung Hoon Lee , Jae Hyun Lee
IPC分类号： H01L21/683 , H01L21/3065 , H05H1/00 , H01J37/32
摘要： A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.
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公开(公告)号：US10854425B2
公开(公告)日：2020-12-01
申请号：US15013795
申请日：2016-02-02
发明人： Chetan Mahadeswaraswamy , Walter R Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini Pattar , Duy D Nguyen , Tina Tsong , Shane C Nevil , Douglas A Buchberger, Jr. , Fernando M Silveira , Brad L Mays , Kartik Ramaswamy , Hamid Noorbakhsh
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
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公开(公告)号：US10677741B2
公开(公告)日：2020-06-09
申请号：US16050319
申请日：2018-07-31
IPC分类号： G01N21/94 , H05H1/00 , B23K26/12 , B23K26/08 , B08B7/00 , B23K26/50 , G01N21/71 , G01J3/443 , B23K26/0622
摘要： Systems, methods, and devices of the various embodiments may enable simultaneous preparation of a substrate for adhesive bonding and detection of minute contaminants on the substrate. Various embodiments may enable detection of contaminants on a surface of a substrate while the surface of the substrate is being prepared for adhesive bonding by laser ablation. Various embodiments may provide an integrated laser treatment and measurement system.
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公开(公告)号：US10545118B2
公开(公告)日：2020-01-28
申请号：US15698351
申请日：2017-09-07
申请人： Shimadzu Corporation
发明人： Kei Shinada
摘要： A dielectric barrier discharge ionization detector (BID) capable of achieving a high level of signal-to-noise ratio in a stable manner is provided. In a BID having a high-voltage electrode, upstream-side ground electrode and downstream-side ground electrode circumferentially formed on the outer circumferential surface of a cylindrical dielectric tube, a heater for heating the cylindrical dielectric tube or tube-line tip member attached to the upper end of the same tube is provided. Increasing the temperature of the cylindrical dielectric tube by this heater improves the stability of the electric discharge, whereby the amount of noise is reduced and a high level of signal-to-noise is achieved.
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公开(公告)号：US10513136B2
公开(公告)日：2019-12-24
申请号：US15596737
申请日：2017-05-16
发明人： Svetlana Paskalova
摘要： In one aspect, a method is described. The method may include exposing a printing surface to a first plasma in order to increase a hydrophilicity of the printing surface. The method may further include, after increasing the hydrophilicity of the printing surface, depositing a printing material on the printing surface. Additionally, the method may include, after depositing the printing material on the printing surface, exposing the printing surface to a second plasma in order to increase a hydrophobicity of the printing surface.
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公开(公告)号：US10456491B2
公开(公告)日：2019-10-29
申请号：US15832148
申请日：2017-12-05
摘要： A method of sterilizing an object with atomic nitrogen from a nitrogen plasma includes the steps of placing the object in a sterilization chamber and a sterilization half-cycle for sterilizing the object present in the chamber. The sterilization half-cycle comprises an alternation between stages of injecting atomic nitrogen into the chamber and of intermediate stages, each intermediate stage including at least one suction stage during which the chamber is evacuated.
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公开(公告)号：US10436750B2
公开(公告)日：2019-10-08
申请号：US15698312
申请日：2017-09-07
发明人： Kei Shinada , Katsuhisa Kitano
摘要： The dielectric barrier discharge ionization detector includes: a dielectric tube through which a plasma generation gas is passed; a high-voltage electrode formed on the outer wall of the dielectric tube; two ground electrodes and formed on the outer wall of the dielectric tube, with the high-voltage electrode in between; a voltage supplier for applying AC voltage between the high-voltage electrode and each ground electrode to generate electric discharge within the dielectric tube and thereby generate plasma from the plasma generation gas; and a charge-collecting section for detecting an ion current formed by ionized sample-component gas produced by the plasma. The distance between one ground electrode and the high-voltage electrode is longer than a discharge initiation distance between these two electrodes, while the distance between the other ground electrode and the high-voltage electrode is shorter than the discharge initiation distance between these two electrodes.
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公开(公告)号：US20190198373A1
公开(公告)日：2019-06-27
申请号：US16031321
申请日：2018-07-10
发明人： Seul Ha MYUNG , Min Joon PARK , Hyo Sung KIM , Kyung Hoon LEE , Jae Hyun LEE
IPC分类号： H01L21/683 , H01L21/3065 , H01J37/32 , H05H1/00
CPC分类号： H01L21/6833 , H01J37/32082 , H01J37/32697 , H01L21/3065 , H05H1/0081
摘要： A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.
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