公开(公告)号：WO2010129292A3

公开(公告)日：2011-02-17

申请号：PCT/US2010032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS INC ,  NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种制备复合氮化物结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二III族元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。

公开(公告)号：WO2006055145A2

公开(公告)日：2006-05-26

申请号：PCT/US2005/037149

申请日：2005-10-14

Applicant: APPLIED MATERIALS, INC. ,  HERCHEN, Harald ,  DUKOVIC, John, O. ,  PANG, Lily

Inventor： HERCHEN, Harald ,  DUKOVIC, John, O. ,  PANG, Lily

IPC: C25D17/00

CPC classification number: C25D17/008 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007

Abstract: A method and apparatus for plating a conductive material onto a substrate is provided. The apparatus includes a fluid processing cell having a fluid basin configured to contain an electrolyte solution and having an opening configured to receive a substrate for processing, an anode assembly positioned in the fluid basin, and a collimator positioned in the fluid basin between the anode assembly and the opening.

Abstract translation: 提供了一种用于将导电材料电镀到基底上的方法和装置。 该装置包括：流体处理池，其具有流体池，该流体池构造成容纳电解质溶液，并且具有构造成接收用于处理的基板的开口;定位在流体池中的阳极组件;以及位于阳极组件之间的流体池中的准直器 和开幕。

公开(公告)号：WO2010118295A3

公开(公告)日：2011-01-20

申请号：PCT/US2010030496

申请日：2010-04-09

Applicant: APPLIED MATERIALS INC ,  ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L21/20

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

公开(公告)号：WO2004094702A8

公开(公告)日：2005-12-29

申请号：PCT/US2004012012

申请日：2004-04-16

Applicant: APPLIED MATERIALS INC ,  YANG MICHAEL X ,  XI MING ,  BRITCHER ERIC B ,  DONOSO BERNARDO ,  PANG LILY L ,  SHERMAN SVETLANA ,  HO HENRY ,  NGUYEN ANH N ,  LERNER ALEXANDER N ,  D AMBRA ALLEN L ,  SHANMUGASUNDRAM ARULKUMAR ,  ISHIKAWA TETSUYA ,  RABINOVICH YEVGENIY ,  LUBOMIRSKY DMITRY ,  MOK YEUK-FAI EDWIN ,  NGUYEN SON T

Inventor： YANG MICHAEL X ,  XI MING ,  ELLWANGER RUSSELL C ,  BRITCHER ERIC B ,  DONOSO BERNARDO ,  PANG LILY L ,  SHERMAN SVETLANA ,  HO HENRY ,  NGUYEN ANH N ,  LERNER ALEXANDER N ,  D AMBRA ALLEN L ,  SHANMUGASUNDRAM ARULKUMAR ,  ISHIKAWA TETSUYA ,  RABINOVICH YEVGENIY ,  LUBOMIRSKY DMITRY ,  MOK YEUK-FAI EDWIN ,  NGUYEN SON T

IPC: B08B3/02 ,  C25D5/00 ,  C25D7/12 ,  C25D17/00 ,  C25D21/00 ,  C25D21/08 ,  H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  H01L21/687 ,  C25D

CPC classification number: H01L21/67167 ,  B08B3/02 ,  C25D5/003 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract translation: 本发明的实施方案通常提供电化学电镀系统。 所述电镀系统包括基板装载站，所述基板装载站定位成与主机处理平台连通，至少一个位于所述主机上的基板电镀单元，位于所述主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

公开(公告)号：WO2013059102A1

公开(公告)日：2013-04-25

申请号：PCT/US2012/060104

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC. ,  NG, Tuoh-Bin ,  MELNIK, Yuriy ,  PANG, Lily ,  TUNCEL, Eda ,  CHEN, Lu ,  NGUYEN, Son T.

Inventor： NG, Tuoh-Bin ,  MELNIK, Yuriy ,  PANG, Lily ,  TUNCEL, Eda ,  CHEN, Lu ,  NGUYEN, Son T.

IPC: H01L21/205

CPC classification number: C23C16/303 ,  C23C16/4488 ,  C23C16/45574 ,  C23C16/4558 ,  Y10T137/0318 ,  Y10T137/8593

Abstract: Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly has orifices through which at least one process gas is introduced into a processing chamber. The two or more gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.

Abstract translation: 这里描述的是具有根据一个实施例的多个气体分配组件的示例性装置。 在一个实施例中，该装置包括两个或更多个气体分配组件。 每个气体分配组件具有孔，至少一个处理气体通过该孔被引入处理室。 两个或更多个气体分配组件可被设计成具有互补的特征径向膜生长速率曲线。

公开(公告)号：WO2010129292A4

公开(公告)日：2011-03-31

申请号：PCT/US2010032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS INC ,  NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明通常提供用于形成LED结构的装置和方法。 本发明的一个实施例提供了一种用于制造化合物氮化物结构的方法，包括：通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素和氮的第一层或氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中的第一层上形成包括第二III族元素和氮的第二层，并且形成包含第三III族元素和氮上的第三层 第二层采用MOCVD工艺。

公开(公告)号：WO2011035041A2

公开(公告)日：2011-03-24

申请号：PCT/US2010/049144

申请日：2010-09-16

Applicant: APPLIED MATERIALS, INC. ,  ISHIKAWA, Tetsuya ,  PANG, Lily L. ,  PHAM, Quyen D. ,  OLGADO, Donald J.K.

Inventor： ISHIKAWA, Tetsuya ,  PANG, Lily L. ,  PHAM, Quyen D. ,  OLGADO, Donald J.K.

IPC: H01L21/677 ,  B65G49/07 ,  B25J15/00 ,  H05B3/02

CPC classification number: H01L21/67196 ,  H01L21/67103 ,  H01L21/67742 ,  H01L21/68707

Abstract: Embodiments of the present invention provide apparatus and method for heating one or more substrates during transfer. One embodiment provides a robot blade assembly for supporting a substrate or a substrate carrier thereon. The robot blade assembly comprises a base plate, an induction heating assembly disposed on the base plate, and a top plate disposed above the induction heating assembly. Another embodiment provides an induction heating assembly disposed over a transfer chamber having a substrate transfer mechanism disposed therein.

Abstract translation: 本发明的实施例提供了用于在传送期间加热一个或多个衬底的装置和方法。 一个实施例提供了用于在其上支撑衬底或衬底载体的机器人刀片组件。 机器人刀片组件包括基板，设置在基板上的感应加热组件和设置在感应加热组件上方的顶板。 另一个实施例提供了一种感应加热组件，其设置在其中设置有基板传送机构的传送室上方。

公开(公告)号：WO2010129292A2

公开(公告)日：2010-11-11

申请号：PCT/US2010/032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS, INC. ,  NIJHAWAN, Sandeep ,  BURROWS, Brian, H. ,  ISHIKAWA, Tetsuya ,  KRYLIOUK, Olga ,  VASUDEV, Anand ,  SU, Jie ,  QUACH, David, H. ,  CHANG, Anzhong ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

Inventor： NIJHAWAN, Sandeep ,  BURROWS, Brian, H. ,  ISHIKAWA, Tetsuya ,  KRYLIOUK, Olga ,  VASUDEV, Anand ,  SU, Jie ,  QUACH, David, H. ,  CHANG, Anzhong ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。

公开(公告)号：WO2010118295A2

公开(公告)日：2010-10-14

申请号：PCT/US2010/030496

申请日：2010-04-09

Applicant: APPLIED MATERIALS, INC. ,  ISHIKAWA, Tetsuya ,  QUACH, David, H. ,  CHANG, Anzhong ,  KRYLIOUK, Olga ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

Inventor： ISHIKAWA, Tetsuya ,  QUACH, David, H. ,  CHANG, Anzhong ,  KRYLIOUK, Olga ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

IPC: H01L21/20

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

公开(公告)号：WO2010118293A2

公开(公告)日：2010-10-14

申请号：PCT/US2010030492

申请日：2010-04-09

Applicant: APPLIED MATERIALS INC ,  ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： ISHIKAWA TETSUYA ,  QUACH DAVID H ,  CHANG ANZHONG ,  KRYLIOUK OLGA ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L21/20 ,  H01L33/02

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。