公开(公告)号：WO03029515A2

公开(公告)日：2003-04-10

申请号：PCT/US0222585

申请日：2002-07-16

Applicant: APPLIED MATERIALS INC ,  LAI KEN K ,  BYUN JEONG SOO ,  WU FREDERICK C ,  SRINIVAS RAMANUJAPURAM A ,  GELATOS AVGERINOS ,  CHANG MEI ,  KORI MORIS ,  SINHA ASHOK K ,  CHUNG HUA ,  FANG HONGBIN ,  MAK ALFRED W ,  YANG MICHAEL X ,  XI MING

Inventor： LAI KEN K ,  BYUN JEONG SOO ,  WU FREDERICK C ,  SRINIVAS RAMANUJAPURAM A ,  GELATOS AVGERINOS ,  CHANG MEI ,  KORI MORIS ,  SINHA ASHOK K ,  CHUNG HUA ,  FANG HONGBIN ,  MAK ALFRED W ,  YANG MICHAEL X ,  XI MING

IPC: C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  C23C16/16

CPC classification number: C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract translation: 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：WO2003008663A1

公开(公告)日：2003-01-30

申请号：PCT/US2002/022492

申请日：2002-07-16

Applicant: APPLIED MATERIALS, INC. ,  YANG, Michael, X. ,  CHUNG, Hua ,  FANG, Hongbin ,  LAI, Ken, K. ,  BYUN, Jeong, Soo ,  MAK, Alfred, W. ,  XI, Ming ,  KORI, Moris ,  LU, Xinliang ,  JIAN, Ping

Inventor： CHUNG, Hua ,  FANG, Hongbin ,  LAI, Ken, K. ,  BYUN, Jeong, Soo ,  MAK, Alfred, W. ,  XI, Ming ,  KORI, Moris ,  LU, Xinliang ,  JIAN, Ping

IPC: C23C16/34

CPC classification number: C23C16/45525 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843 ,  H01L27/0805 ,  H01L28/40

Abstract: Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

Abstract translation: 公开了在衬底上沉积氮化钛（TiN）膜的方法。 氮化钛（TiN）膜可以通过在衬底上交替吸附含钛前体和NH 3气体的循环沉积工艺来形成。 含钛前体和NH 3气体反应以在衬底上形成氮化钛（TiN）层。 氮化钛（TiN）膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，制造互连结构。 氮化钛膜也可以用作三维电容器结构的电极，例如沟槽电容器和冠状电容器。

公开(公告)号：WO2003029515A3

公开(公告)日：2003-04-10

申请号：PCT/US2002/022585

申请日：2002-07-16

Applicant: APPLIED MATERIALS, INC. ,  LAI, Ken, K. ,  BYUN, Jeong, Soo ,  WU, Frederick, C. ,  SRINIVAS, Ramanujapuram, A. ,  GELATOS, Avgerinos ,  CHANG, Mei ,  KORI, Moris ,  SINHA, Ashok, K. ,  CHUNG, Hua ,  FANG, Hongbin ,  MAK, Alfred, W. ,  YANG, Michael, X. ,  XI, Ming

Inventor： LAI, Ken, K. ,  BYUN, Jeong, Soo ,  WU, Frederick, C. ,  SRINIVAS, Ramanujapuram, A. ,  GELATOS, Avgerinos ,  CHANG, Mei ,  KORI, Moris ,  SINHA, Ashok, K. ,  CHUNG, Hua ,  FANG, Hongbin ,  MAK, Alfred, W. ,  YANG, Michael, X. ,  XI, Ming

IPC: C23C16/44

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

公开(公告)号：WO2006078779A3

公开(公告)日：2009-04-23

申请号：PCT/US2006001838

申请日：2006-01-19

Applicant: APPLIED MATERIALS INC ,  LAI KEN KAUNG ,  RAJAGOPALAN RAVI ,  KHANDELWAL AMIT ,  MOORTHY MADHU ,  GANDIKOTA SRINIVAS ,  CASTRO JOSEPH ,  GELATOS AVGERINOS V ,  KNEPFLER CHERYL ,  JIAN PING ,  FANG HONGBIN ,  HUANG CHAO-MING ,  XI MING ,  YANG MICHAEL X ,  CHUNG HUA ,  BYUN JEONG SOO

Inventor： LAI KEN KAUNG ,  RAJAGOPALAN RAVI ,  KHANDELWAL AMIT ,  MOORTHY MADHU ,  GANDIKOTA SRINIVAS ,  CASTRO JOSEPH ,  GELATOS AVGERINOS V ,  KNEPFLER CHERYL ,  JIAN PING ,  FANG HONGBIN ,  HUANG CHAO-MING ,  XI MING ,  YANG MICHAEL X ,  CHUNG HUA ,  BYUN JEONG SOO

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer within a process chamber, exposing the substrate to a first soak process (220) for a first tune period and depositing a nucleation layer (230) on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the substrate to a second soak process (240) for a second time period and depositing a bulk layer (250) on the nucleation layer In one example, the barrier layer contains titanium nitride and the first and second soak processes contain at least one reducing gas. The nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process and the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含阻挡层的衬底定位在处理室内，将衬底暴露于第一调谐周期的第一浸泡工艺（220）和沉积 通过使含钨前体和还原剂流入处理室中的阻挡层上的成核层（230）。 该方法还包括将基板暴露于第二时间段的第二浸泡工艺（240）并在成核层上沉积体层（250）。在一个示例中，阻挡层包含氮化钛，并且第一和第二浸泡工艺包含 至少一种还原气体。 可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积成核层，并且通过化学气相沉积工艺或物理气相沉积工艺沉积本体层。

公开(公告)号：WO2007044232A2

公开(公告)日：2007-04-19

申请号：PCT/US2006/037697

申请日：2006-09-28

Applicant: APPLIED MATERIALS, INC. ,  GU, Haiyang ,  YANG, Jeff ,  WEE, Ho Sun ,  XI, Ming ,  MORI, Glen, T. ,  ZONDAK, Yohan

Inventor： GU, Haiyang ,  YANG, Jeff ,  WEE, Ho Sun ,  XI, Ming ,  MORI, Glen, T. ,  ZONDAK, Yohan

IPC: C23C28/00 ,  C25D5/34

CPC classification number: C23C14/16 ,  C23C14/5853 ,  C23C28/023 ,  C23C28/322 ,  C23C28/345 ,  C25D5/34 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

Abstract: Embodiments of the invention provide methods for reducing formation of void-type defects on the surface of a substrate during electrochemical plating. Embodiments of the invention provide methods to improve the wetting of a substrate surface prior to immersion and thereby minimize adhesion of bubbles to the substrate surface during immersion. A thin uniform metal oxide is formed on a metal layer on the substrate immediately prior to substrate immersion. In one aspect, exposing the substrate to an oxygen-containing gas, e.g. air, forms the metal oxide. The oxygen-containing gas may be flowed over the substrate or the substrate may be rotated at a high rate in the presence of an oxygen-containing gas. In another aspect, non-uniform metal oxides are first removed from the substrate in an anneal process and a thin uniform metal oxide is subsequently re-formed. An optimized substrate immersion method may also be used to further reduce void defects.

Abstract translation: 本发明的实施例提供了用于在电化学电镀期间减少基板表面上的空隙型缺陷的形成的方法。 本发明的实施例提供了在浸入之前改善衬底表面的润湿从而最小化浸泡期间气泡与衬底表面的粘附的方法。 在基板浸渍之前，在基板上的金属层上形成均匀的均匀金属氧化物。 在一个方面，将基底暴露于含氧气体，例如， 空气形成金属氧化物。 含氧气体可以在衬底上流动，或者衬底可以在含氧气体存在下以高速旋转。 在另一方面，在退火工艺中首先从衬底上除去不均匀的金属氧化物，随后重新形成均匀的均匀金属氧化物。 还可以使用优化的底物浸渍方法来进一步减少空隙缺陷。

公开(公告)号：WO2006078779A2

公开(公告)日：2006-07-27

申请号：PCT/US2006/001838

申请日：2006-01-19

Applicant: APPLIED MATERIALS, INC. ,  LAI, Ken, Kaung ,  RAJAGOPALAN, Ravi ,  KHANDELWAL, Amit ,  MOORTHY, Madhu ,  GANDIKOTA, Srinivas ,  CASTRO, Joseph ,  GELATOS, Avgerinos, V. ,  KNEPFLER, Cheryl ,  JIAN, Ping ,  FANG, Hongbin ,  HUANG, Chao-ming ,  XI, Ming ,  YANG, Michael, X. ,  CHUNG, Hua ,  BYUN, Jeong, Soo

Inventor： LAI, Ken, Kaung ,  RAJAGOPALAN, Ravi ,  KHANDELWAL, Amit ,  MOORTHY, Madhu ,  GANDIKOTA, Srinivas ,  CASTRO, Joseph ,  GELATOS, Avgerinos, V. ,  KNEPFLER, Cheryl ,  JIAN, Ping ,  FANG, Hongbin ,  HUANG, Chao-ming ,  XI, Ming ,  YANG, Michael, X. ,  CHUNG, Hua ,  BYUN, Jeong, Soo

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer within a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the substrate to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride and the first and second soak processes contain at least one reducing gas. The nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process and the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在一个实施例中，提供了一种用于在衬底上形成含钨层的方法，其包括将含有阻挡层的衬底定位在处理室内，将衬底暴露于第一次浸泡工艺第一次并沉积成核层 通过使含钨前体和还原剂流入处理室而在阻挡层上。 该方法还包括将基板暴露于第二时间段的第二浸泡工艺，并将沉积层沉积在成核层上。 在一个示例中，阻挡层包含氮化钛，并且第一和第二浸泡方法含有至少一种还原气体。 可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积成核层，并且通过化学气相沉积工艺或物理气相沉积工艺沉积本体层。

公开(公告)号：WO2004094702A2

公开(公告)日：2004-11-04

申请号：PCT/US2004/012012

申请日：2004-04-16

Applicant: APPLIED MATERIALS, INC. ,  ELLWANGER, Russell, C. ,  YANG, Michael, X. ,  XI, Ming ,  BRITCHER, Eric, B. ,  DONOSO, Bernardo ,  PANG, Lily, L. ,  SHERMAN, Svetlana ,  HO, Henry ,  NGUYEN, Anh, N. ,  LERNER, Alexander, N. ,  D'AMBRA, Allen, L. ,  SHANMUGASUNDRAM, Arulkumar ,  ISHIKAWA, Tetsuya ,  RABINOVICH, Yevgeniy ,  LUBOMIRSKY, Dmitry ,  MOK, Yeuk-Fai, Edwin ,  NGUYEN, Son, T.

Inventor： YANG, Michael, X. ,  XI, Ming ,  BRITCHER, Eric, B. ,  DONOSO, Bernardo ,  PANG, Lily, L. ,  SHERMAN, Svetlana ,  HO, Henry ,  NGUYEN, Anh, N. ,  LERNER, Alexander, N. ,  D'AMBRA, Allen, L. ,  SHANMUGASUNDRAM, Arulkumar ,  ISHIKAWA, Tetsuya ,  RABINOVICH, Yevgeniy ,  LUBOMIRSKY, Dmitry ,  MOK, Yeuk-Fai, Edwin ,  NGUYEN, Son, T.

IPC: C25D

CPC classification number: H01L21/67167 ,  B08B3/02 ,  C25D5/003 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract translation: 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

公开(公告)号：WO2014012237A1

公开(公告)日：2014-01-23

申请号：PCT/CN2012/078899

申请日：2012-07-19

Applicant: IDEAL ENERGY EQUIPMENT (SHANGHAI) LTD. ,  HUANG, Zhanchao ,  HE, Chuan ,  MA, Yue ,  CHEONG, Hungseob ,  SONG, Tao ,  UMOTOY, Sal ,  HU, Bing ,  XI, Ming

Inventor： HUANG, Zhanchao ,  HE, Chuan ,  MA, Yue ,  CHEONG, Hungseob ,  SONG, Tao ,  UMOTOY, Sal ,  HU, Bing ,  XI, Ming

IPC: C23C16/455 ,  C30B25/14 ,  H01L21/205 ,  H01L21/20 ,  C30B25/02 ,  C30B29/38 ,  C23C16/18 ,  C23C16/34 ,  C23C16/52

CPC classification number: C23C16/303 ,  C23C16/45551 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

Abstract: Disclosed are a MOCVD method and a gas distribution apparatus for fabricating nitride-based semiconductor crystals with high Al content between 20% and 100%, providing an inhomogeneous mixing of metalorganic and ammonia reactants in the gaseous environment to form a plurality of alternating zones, one rich in metalorganic source and the other rich in ammonia, immediately above the epitaxy substrates. This inhomogeneously mixed gaseous phase reduces parasitic reaction. In epitaxy process, the hot epitaxy substrates continuously move under said alternating zones of reactants, passing each zone at the time scales from a few milliseconds to a few tens of milliseconds.

Abstract translation: 公开了一种MOCVD方法和气体分配装置，用于制造高Al含量在20％至100％之间的氮化物基半导体晶体，从而在气态环境中提供金属有机和氨反应物的不均匀混合以形成多个交替区，一个 富含金属有机源和其他富含氨，立即在外延基板上方。 这种非均匀混合的气相减少寄生反应。 在外延过程中，热的外延衬底在反应物的所述交替区域下连续地移动，使得每个区域的时间尺度从几毫秒到几十毫秒。

公开(公告)号：WO2007044232A3

公开(公告)日：2007-06-14

申请号：PCT/US2006037697

申请日：2006-09-28

Applicant: APPLIED MATERIALS INC ,  GU HAIYANG ,  YANG JEFF ,  WEE HO SUN ,  XI MING ,  MORI GLEN T ,  ZONDAK YOHAN

Inventor： GU HAIYANG ,  YANG JEFF ,  WEE HO SUN ,  XI MING ,  MORI GLEN T ,  ZONDAK YOHAN

IPC: H01L21/4763 ,  H05K3/00

CPC classification number: C23C14/16 ,  C23C14/5853 ,  C23C28/023 ,  C23C28/322 ,  C23C28/345 ,  C25D5/34 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

Abstract: Embodiments of the invention provide methods for reducing formation of void-type defects on the surface of a substrate during electrochemical plating. Embodiments of the invention provide methods to improve the wetting of a substrate surface prior to immersion and thereby minimize adhesion of bubbles to the substrate surface during immersion. A thin uniform metal oxide is formed on a metal layer on the substrate immediately prior to substrate immersion. In one aspect, exposing the substrate to an oxygen-containing gas, e.g. air, forms the metal oxide. The oxygen-containing gas may be flowed over the substrate or the substrate may be rotated at a high rate in the presence of an oxygen-containing gas. In another aspect, non-uniform metal oxides are first removed from the substrate in an anneal process and a thin uniform metal oxide is subsequently re-formed. An optimized substrate immersion method may also be used to further reduce void defects.

Abstract translation: 本发明的实施例提供了用于减少电化学电镀期间在衬底表面上形成空隙型缺陷的方法。 本发明的实施例提供了在浸渍之前改进基底表面的润湿并由此使浸入期间气泡对基底表面的附着力最小化的方法。 在衬底浸没之前，在衬底上的金属层上形成均匀的薄金属氧化物。 在一个方面，将衬底暴露于含氧气体，例如氧气。 空气形成金属氧化物。 含氧气体可以在衬底上流动，或者衬底可以在含氧气体存在下高速旋转。 另一方面，非均匀金属氧化物首先在退火工艺中从衬底中去除，然后再形成均匀的薄金属氧化物。 优化的衬底浸没方法也可以用于进一步减少空隙缺陷。

公开(公告)号：WO2004094702A3

公开(公告)日：2006-11-30

申请号：PCT/US2004012012

申请日：2004-04-16

Applicant: APPLIED MATERIALS INC ,  YANG MICHAEL X ,  XI MING ,  ELLWANGER RUSSELL C ,  BRITCHER ERIC B ,  DONOSO BERNARDO ,  PANG LILY L ,  SHERMAN SVETLANA ,  HO HENRY ,  NGUYEN ANH N ,  LERNER ALEXANDER N ,  D AMBRA ALLEN L ,  SHANMUGASUNDRAM ARULKUMAR ,  ISHIKAWA TETSUYA ,  RABINOVICH YEVGENIY ,  LUBOMIRSKY DMITRY ,  MOK YEUK-FAI EDWIN ,  NGUYEN SON T

Inventor： YANG MICHAEL X ,  XI MING ,  ELLWANGER RUSSELL C ,  BRITCHER ERIC B ,  DONOSO BERNARDO ,  PANG LILY L ,  SHERMAN SVETLANA ,  HO HENRY ,  NGUYEN ANH N ,  LERNER ALEXANDER N ,  D AMBRA ALLEN L ,  SHANMUGASUNDRAM ARULKUMAR ,  ISHIKAWA TETSUYA ,  RABINOVICH YEVGENIY ,  LUBOMIRSKY DMITRY ,  MOK YEUK-FAI EDWIN ,  NGUYEN SON T

IPC: C25D7/12 ,  B08B3/02 ,  C25D5/00 ,  C25D17/00 ,  C25D17/02 ,  C25D19/00 ,  C25D21/00 ,  C25D21/08 ,  H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67167 ,  B08B3/02 ,  C25D5/003 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract translation: 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主框架上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。