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1.发明申请
公开(公告)号：WO2022266140A1
公开(公告)日：2022-12-22
申请号：PCT/US2022/033488
申请日：2022-06-14
Applicant: LAM RESEARCH CORPORATION
Inventor： KANAKASABAPATHY, Sivananda Krishnan , HUBACEK, Jerome S. , PETER, Daniel , TAN, Samantha S.H.
Abstract: Disclosed herein are radiative heating systems and methods for use with dry development processes. Such systems and methods may, in some instances, allow for volatile halides that may be trapped on the surface of a wafer after dry development processing has completed to be driven out of the wafer through radiative heating thereof. Such systems and methods may, in some instances, be provided in an in-situ context in which the wafers being heated are radiatively heated within the same chamber as the dry development process is performed. In other contexts, such radiative heating may be performed in other locations, e.g., as the wafer transits from the processing chamber to another chamber or in another chamber entirely.
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公开(公告)号：WO2022173632A1
公开(公告)日：2022-08-18
申请号：PCT/US2022/014984
申请日：2022-02-02
Applicant: LAM RESEARCH CORPORATION
Abstract: The present disclosure relates to a composition formed with an organometallic precursor and a dopant precursor, as well as methods for forming and employing such compositions. In particular embodiments, the dopant precursor provides an element into the composition to increase quantum efficiency, such as by increasing radiation absorption and/or by increasing secondary electron emission or secondary electron yield (SEY) within the composition. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.
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3.发明申请
公开(公告)号：WO2021202198A1
公开(公告)日：2021-10-07
申请号：PCT/US2021/023901
申请日：2021-03-24
Applicant: LAM RESEARCH CORPORATION
Inventor： KANAKASABAPATHY, Sivananda Krishnan , TAN, Samantha S.H. , YU, Jengyi , LEE, Younghee , JENSEN, Alan J. , LI, Da
Abstract: The present disclosure relates to stacks having a sensitized resist film, as well as methods and apparatuses for applying such sensitized films. In particular embodiments, the sensitizer can be provided in gas form, and unreacted sensitizer precursors can be recovered after a deposition step.
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公开(公告)号：WO2021167809A1
公开(公告)日：2021-08-26
申请号：PCT/US2021/017066
申请日：2021-02-08
Applicant: LAM RESEARCH CORPORATION
Inventor： KANAKASABAPATHY, Sivananda Krishnan , SINGHAL, Akhil , JENSEN, Alan J. , HEO, Seongjun , HASAN, Nishat , REVURU, Srividya
IPC: H01L21/033 , H01L21/311 , H01L21/66 , H01L21/02 , G01N21/71 , G01N21/73
Abstract: Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.
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公开(公告)号：WO2019152362A1
公开(公告)日：2019-08-08
申请号：PCT/US2019/015559
申请日：2019-01-29
Applicant: LAM RESEARCH CORPORATION
Inventor： YU, Jengyi , TAN, Samantha SiamHwa , HEO, Seongjun , VOLOSSKIY, Boris , KANAKASABAPATHY, Sivananda Krishnan , WISE, Richard , PAN, Yang , WU, Hui-Jung
IPC: H01L21/3213 , H01L21/768 , H01L21/02 , H01L21/67
Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.
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Patent Agency Ranking
公开(公告)号：WO2023023526A1
公开(公告)日：2023-02-23
申请号：PCT/US2022/075035
申请日：2022-08-16
Applicant: LAM RESEARCH CORPORATION
Inventor： KANAKASABAPATHY, Sivananda Krishnan , TUCKER, Jeremy Todd , ONG, Seng , HUBACEK, Jerome S.
IPC: H01L21/67 , H01L21/687 , G03F7/16 , C23C16/458 , C23C16/46
Abstract: Provided herein are various apparatuses and systems for providing edge heating of semiconductor wafers using optical means. Such systems may direct radiant energy towards the edge region of a semiconductor wafer.
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公开(公告)号：WO2022020507A1
公开(公告)日：2022-01-27
申请号：PCT/US2021/042626
申请日：2021-07-21
Applicant: LAM RESEARCH CORPORATION
Inventor： SINGHAL, Akhil , KANAKASABAPATHY, Sivananda Krishnan
IPC: H01L21/033 , H01L21/311 , H01L21/3213
Abstract: Methods and apparatuses for performing spacer on spacer multiple patterning schemes using an exhumable first spacer material and a complementary second spacer material. Certain embodiments involve using a tin oxide spacer material for one of the spacer materials in spacer on spacer self aligned multiple patterning.
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公开(公告)号：WO2022016128A1
公开(公告)日：2022-01-20
申请号：PCT/US2021/042108
申请日：2021-07-16
Applicant: LAM RESEARCH CORPORATION
Inventor： HANSEN, Eric Calvin , WEIDMAN, Timothy William , WU, Chenghao , LIN, Qinghuang , BLAKENEY, Kyle Jordan , LAVOIE, Adrien , KANAKASABAPATHY, Sivananda Krishnan , TAN, Samantha S.H. , WISE, Richard , PAN, Yang , LEE, Younghee , NARDI, Katie Lynn , GU, Kevin Li , VOLOSSKIY, Boris
Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.
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公开(公告)号：WO2022010809A1
公开(公告)日：2022-01-13
申请号：PCT/US2021/040381
申请日：2021-07-02
Applicant: LAM RESEARCH CORPORATION
Inventor： YU, Jengyi , TAN, Samantha S.H. , ALVI, Mohammed Haroon , WISE, Richard , PAN, Yang , GOTTSCHO, Richard A. , LAVOIE, Adrien , KANAKASABAPATHY, Sivananda Krishnan , WEIDMAN, Timothy William , LIN, Qinghuang , HUBACEK, Jerome
IPC: G03F7/16 , G03F7/38 , G03F7/36 , G03F7/004 , G03F7/20 , G03F7/11 , H01L21/67 , C23C16/00 , G03F7/0042 , G03F7/167 , G03F7/168 , H01L21/67167 , H01L21/67207
Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
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公开(公告)号：WO2021202146A1
公开(公告)日：2021-10-07
申请号：PCT/US2021/023493
申请日：2021-03-22
Applicant: LAM RESEARCH CORPORATION
Inventor： KANAKASABAPATHY, Sivananda Krishnan
Abstract: The present disclosure relates to stacks having a hermetic overlayer, as well as methods and apparatuses for applying such hermetic overlayers. In particular embodiments, the hermetic overlayer allows a film to be employed as a positive tone, EUV photoresist with dry development.
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