公开(公告)号：WO02089268A3

公开(公告)日：2003-08-28

申请号：PCT/US0222500

申请日：2002-02-21

Applicant: MOTOROLA INC

Inventor： EISENBEISER KURT W

IPC: H01L33/10 ,  H01L33/46 ,  H01S5/183 ,  G02B5/08 ,  H01L33/00 ,  H01L51/20

CPC classification number: H01S5/183 ,  H01L33/105 ,  H01L33/465 ,  H01S5/0261

Abstract: A high contrast reflective mirror (24) includes a plurality of alternating first monocrystalline layers (14) and second monocrystalline layers (16). The first monocrystalline layers are formed of an oxide material that has a cubic structure and a first index of refraction. The second monocrystalline layers are formed of a semiconductor material that has a second index of refraction. The first index of refraction and the second index of refraction differ by at least about 0.5

Abstract translation: 高对比度反射镜（24）包括多个交替的第一单晶层（14）和第二单晶层（16）。 第一单晶层由具有立方结构和第一折射率的氧化物材料形成。 第二单晶层由具有第二折射率的半导体材料形成。 第一折射率和第二折射率相差至少约0.5

公开(公告)号：WO02091488A3

公开(公告)日：2003-01-30

申请号：PCT/US0149406

申请日：2001-12-18

Applicant: MOTOROLA INC

Inventor： EISENBEISER KURT W

IPC: C30B25/18 ,  H01L21/20 ,  H01L33/00 ,  H01L21/8258

CPC classification number: H01L33/0066 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: Light emitting devices (262) and optically-active material (264) can be formed overlying monocrystalline substrates such as large silicon wafers (266) using a compliant substrate for growing the devices (262). One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer (266). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.

Abstract translation: 发光器件（262）和光学活性材料（264）可以使用用于生长器件（262）的柔性衬底形成在诸如大硅晶片（266）之类的单晶衬底上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片（266）上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。

公开(公告)号：WO03009395A3

公开(公告)日：2003-09-18

申请号：PCT/US0214366

申请日：2002-05-06

Applicant: MOTOROLA INC

Inventor： EISENBEISER KURT W ,  FREEBURG THOMAS ,  PRENDERGAST JAMES E ,  OOMS WILLIAM J ,  DROOPAD RAVINDRANATH ,  RAMDANI JAMAL

IPC: H01L21/20 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/068

CPC classification number: H01L31/0693 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions (302, 304).

Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池结的单片集成（302,304）。

公开(公告)号：WO0247127A2

公开(公告)日：2002-06-13

申请号：PCT/US0144776

申请日：2001-11-29

Applicant: MOTOROLA INC

Inventor： OOMS WILLIAM J ,  FINDER JEFFREY M ,  EISENBEISER KURT W ,  HALLMARK JERALD A

IPC: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L27/16 ,  H01L37/02 ,  H01L21/00

CPC classification number: H01L37/02 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/32 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L27/16

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.

Abstract translation: 通过首先在硅晶片（102）上生长容纳缓冲层（104），可以将高质量的单晶材料外延层生长在大的硅晶片上。 容纳缓冲层（104）是通过氧化硅的非晶界面层（108）与硅晶片（102）间隔开的单晶材料层。 非晶界面层消耗应变并允许高质量单晶容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 利用这种技术允许在单晶硅衬底上制造薄膜热释电器件（150）。

公开(公告)号：WO03009357A2

公开(公告)日：2003-01-30

申请号：PCT/US0222800

申请日：2002-07-17

Applicant: MOTOROLA INC

Inventor： EISENBEISER KURT W ,  YU ZHIYI ,  DROOPAD RAVINDRANATH

IPC: C30B25/18 ,  H01L21/20 ,  H01L21/762

CPC classification number: H01L21/7624 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating bufferlayer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline layer (26) is then formed over the accommodating buffer layer, such that a lattice constant of the monocrystalline layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过硅氧化物的非晶界面层（28）与硅晶片（22）间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 然后在容纳缓冲层上形成单晶层（26），使得单晶层的晶格常数与随后生长的单晶膜的晶格常数基本一致。

公开(公告)号：WO02056417A2

公开(公告)日：2002-07-18

申请号：PCT/US0146906

申请日：2001-12-06

Applicant: MOTOROLA INC

Inventor： EISENBEISER KURT W ,  EL-ZEIN NADA A ,  PRENDERGAST E JAMES

IPC: C30B25/18 ,  H01Q1/38 ,  H01Q3/44 ,  C04B35/117 ,  C30B29/32

CPC classification number: C30B25/18 ,  H01Q1/38 ,  H01Q3/44

Abstract: A highly tunable structure (20) can be monolithically integrated upon a monocrystalline semiconductor substrate (22) according to the structure and process described herein. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline buffer layer (24). In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy (61) and epitaxial growth of Zintl phase materials (130).

Abstract translation: 可以根据本文所述的结构和方法将高度可调结构（20）单片集成在单晶半导体衬底（22）上。 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长成覆盖单晶衬底（22），例如大的硅晶片。 无定形界面层（28）消散应变并允许高质量单晶缓冲层（24）的生长。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延（61）和Zintl相材料（130）的外延生长。

公开(公告)号：WO02054467A2

公开(公告)日：2002-07-11

申请号：PCT/US0146547

申请日：2001-12-03

Applicant: MOTOROLA INC

Inventor： EISENBEISER KURT W ,  DROOPAD RAVINDRANATH ,  YU ZHIYI

IPC: C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/316 ,  H01L21/318 ,  H01L21/36 ,  H01L21/822 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/06

CPC classification number: C30B25/18 ,  C23C16/26 ,  C30B25/02 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/31691 ,  H01L21/318 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/0605 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High quality epitaxial layers of conductive monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline material spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer (24).

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将导电单晶材料的高质量外延层生长在覆盖单晶衬底（22），例如大硅晶片上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅的非晶界面层（28）与硅晶片（22）间隔开的单晶材料层。 非晶界面层（28）耗散应变并允许高质量单晶容纳缓冲层（24）的生长。