公开(公告)号：WO2014130672A1

公开(公告)日：2014-08-28

申请号：PCT/US2014/017396

申请日：2014-02-20

Applicant: APPLIED MATERIALS, INC. ,  YUDOVSKY, Joseph ,  GRIFFIN, Kevin ,  GANGAKHEDKAR, Kaushal

Inventor： YUDOVSKY, Joseph ,  GRIFFIN, Kevin ,  GANGAKHEDKAR, Kaushal

IPC: C23C16/44 ,  C23C16/458

CPC classification number: C23C16/481 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/4586 ,  H01L21/02104

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing.

Abstract translation: 描述了用于处理半导体晶片的装置和方法，使得晶片在处理期间保持就位。 晶片经受顶表面和底表面之间的压差，使得足够的力防止晶片在加工过程中移动。

公开(公告)号：WO2013138216A1

公开(公告)日：2013-09-19

申请号：PCT/US2013/030118

申请日：2013-03-11

Applicant: APPLIED MATERIALS, INC. ,  THOMPSON, David ,  NARWANKAR, Pravin, K. ,  SRINIVASAN, Swaminathan ,  CHATTERJEE, Sukti ,  MAYUR, Abhilash ,  MAQSOOD, Kashif

Inventor： THOMPSON, David ,  NARWANKAR, Pravin, K. ,  SRINIVASAN, Swaminathan ,  CHATTERJEE, Sukti ,  MAYUR, Abhilash ,  MAQSOOD, Kashif

IPC: C23C16/50 ,  C23C16/44

CPC classification number: C23C16/45551 ,  C23C16/45548 ,  C23C16/483

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.

Abstract translation: 提供了原子层沉积设备和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。 还提供了具有细长气体喷射器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

公开(公告)号：WO2013059591A1

公开(公告)日：2013-04-25

申请号：PCT/US2012/061022

申请日：2012-10-19

Applicant: APPLIED MATERIALS, INC. ,  YUDOVSKY, Joseph ,  CHANG, Mei ,  GUNGOR, Faruk ,  MA, Paul F. ,  CHU, David ,  KAO, Chien-Teh ,  LAM, Hyman ,  WU, Dien-Yeh

Inventor： YUDOVSKY, Joseph ,  CHANG, Mei ,  GUNGOR, Faruk ,  MA, Paul F. ,  CHU, David ,  KAO, Chien-Teh ,  LAM, Hyman ,  WU, Dien-Yeh

IPC: H01L21/205

CPC classification number: F17D3/00 ,  Y10T137/7833

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕的螺旋输送通道，分离输送通道，合流输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

公开(公告)号：WO2012145196A2

公开(公告)日：2012-10-26

申请号：PCT/US2012/032902

申请日：2012-04-10

Applicant: APPLIED MATERIALS, INC. ,  KIM, Hyungjun ,  KIM, Woo-Hee ,  KIM, Min-Kyu ,  HUNG, Steven ,  NOORI, Atif ,  THOMPSON, David ,  ANTHIS, Jeffrey W.

Inventor： KIM, Hyungjun ,  KIM, Woo-Hee ,  KIM, Min-Kyu ,  HUNG, Steven ,  NOORI, Atif ,  THOMPSON, David ,  ANTHIS, Jeffrey W.

IPC: H01L21/31 ,  H01L21/8238

CPC classification number: H01L21/02189 ,  C23C16/40 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L29/517

Abstract: Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.

Abstract translation: 提供了在衬底上沉积含有高k电介质膜的铈掺杂铪的方法。 具体方法的试剂包括四氯化铪，铈和水的有机金属络合物。

公开(公告)号：WO2012118952A2

公开(公告)日：2012-09-07

申请号：PCT/US2012/027247

申请日：2012-03-01

Applicant: APPLIED MATERIALS, INC. ,  YUDOVSKY, Joseph

Inventor： YUDOVSKY, Joseph

IPC: H01L21/205

CPC classification number: C23C16/45551 ,  C23C16/54

Abstract: Provided are atomic layer deposition apparatus and methods including multiple gas distribution plates including stages for moving substrates between the gas distribution plates.

Abstract translation: 提供了包括多个气体分配板的原子层沉积设备和方法，其包括在气体分布板之间移动基板的阶段。

公开(公告)号：WO2012015876A3

公开(公告)日：2012-02-02

申请号：PCT/US2011/045472

申请日：2011-07-27

Applicant: APPLIED MATERIALS, INC. ,  EBERSPACHER, Chris

Inventor： EBERSPACHER, Chris

IPC: H01L31/042 ,  H01L31/18

Abstract: Photovoltaic modules and methods for making photovoltaic modules are disclosed. In one or more embodiments of the invention, the photovoltaic module includes a transparent sheet with a channel to accommodate a conductive member.

公开(公告)号：WO2023064016A1

公开(公告)日：2023-04-20

申请号：PCT/US2022/036176

申请日：2022-07-06

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Xiangjin ,  KASHEFI, Kevin

IPC: H01L21/768 ,  C23C14/04 ,  C23C14/14 ,  C23C14/58

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：WO2023278721A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035758

申请日：2022-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： MARQUARDT, David ,  WHITE, Carl ,  VERGHESE, Mohith

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/4402 ,  C23C16/4481

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：WO2022187339A1

公开(公告)日：2022-09-09

申请号：PCT/US2022/018488

申请日：2022-03-02

Applicant: APPLIED MATERIALS, INC.

Inventor： RAZAVI HESABI, Zohreh ,  TRINH, Cong ,  GRIFFIN, Kevin ,  GARACHTCHENKO, Alexander V. ,  CHOI, Kenric ,  JOSE, Vipin ,  SAWALKAR, Saloni ,  MALDONADO-GARCIA, Maribel ,  CHANEY, Kendrick H.

IPC: C23C16/448 ,  C23C16/52

Abstract: A system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

公开(公告)号：WO2022170266A1

公开(公告)日：2022-08-11

申请号：PCT/US2022/015674

申请日：2022-02-08

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yong ,  GANDIKOTA, Srinivas ,  HUNG, Steven C.H. ,  SRIRAM, Mandyam ,  WRENCH, Jacqueline S. ,  YANG, Yixiong

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/423

Abstract: A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-κ metal oxide layer on the interfacial layer, the high-κ metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-κ metal oxide capping layer on the high-κ metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-κ metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-κ metal oxide layer to form a dipole region.