公开(公告)号：WO2021122862A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/086594

申请日：2020-12-16

Applicant: ASML NETHERLANDS B.V.

Inventor： REN, Yan

IPC: H01J37/153 ,  H01J37/26

Abstract: A method of reducing aberration comprises separating (830) charged particles of a beam (811) based on energy (810) of the charged particles to form beamlets (812-814), each of the beamlets configured to include charged particles at a central energy level; and deflecting (950) the beamlets so that beamlets having different central energy levels are deflected differently. An aberration corrector comprises a dispersive element (830) (optionally 820) configured to cause constituent parts of a beam (811) (e.g. a charged particle beam) to spread apart based on energy (810); an aperture array (840) configured to form beamlets (812-814) from the spread apart beam; and a deflector array (950) configured to deflect the beamlets differently based on central energy levels of particles that form the beamlets.

公开(公告)号：WO2021122016A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/084387

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  AARTS, Igor, Matheus, Petronella ,  BHATTACHARYYA, Kaustuve ,  BRINKHOF, Ralph ,  KARSSEMEIJER, Leendert, Jan ,  KEIJ, Stefan, Carolus, Jacobus, Antonius ,  KOK, Haico, Victor ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  MEGENS, Henricus, Johannes, Lambertus ,  REHMAN, Samee, Ur

IPC: G03F7/20 ,  G03F9/00 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7034

Abstract: Disclosed is a metrology method relating to measurement of a structure on a substrate, said structure being subject to one or more asymmetric deviation. The method comprises obtaining at least one intensity asymmetry value relating to the asymmetric deviation, wherein the at least one intensity asymmetry value comprises a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by said structure; determining at least one phase offset value corresponding to the one or more asymmetric deviation based on said at least one intensity asymmetry value; and determining one or more measurement correction for said one or more asymmetric deviation from the one or more phase offset.

公开(公告)号：WO2021121986A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/084186

申请日：2020-12-02

Applicant: ASML NETHERLANDS B.V.

Inventor： BURKE, Jeremy ,  MA, Yue ,  LANGLOIS, Marc, Guy

IPC: G03F7/20 ,  G03F7/70175 ,  G03F7/70841 ,  G03F7/70891 ,  G03F7/7095 ,  G03F7/70991 ,  G21K2201/065

Abstract: A jointed component for a lithographic apparatus comprising a joint (16) between two or more mating surfaces (17a, 19a), at least one of the mating surfaces comprising tin (18). A jointed component for a lithographic apparatus comprises a joint between two or more components (17, 19) formed of a material other than tin, the two components joined at respective mating surfaces, at least one of the mating surfaces comprising tin thereon. Also described is a lithographic apparatus comprising a jointed component comprising a tin layer, the use of tin as a thermally conductive interface material in a lithographic apparatus, and a method of enhancing the thermal conductivity of a jointed connection of a lithographic apparatus.

公开(公告)号：WO2021104718A1

公开(公告)日：2021-06-03

申请号：PCT/EP2020/077115

申请日：2020-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： MIDDLEBROOKS, Scott, Anderson ,  WARNAAR, Patrick ,  HELFENSTEIN, Patrick, Philipp ,  KONIJNENBERG, Alexander, Prasetya ,  PISARENCO, Maxim ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria

IPC: G03F7/20 ,  G06K9/36 ,  G06N3/02 ,  G06N3/04 ,  G06N20/00 ,  G06T7/00

Abstract: A method and system for predicting complex electric field images with a parameterized model are described. A latent space representation of a complex electric field image is determined based on dimensional data in a latent space of the parameterized model for a given input to the parameterized model. The given input may be a measured amplitude (e.g., intensity) associated with the complex electric field image. The complex electric field image is predicted based on the latent space representation of the complex electric field image. The predicted complex electric field image includes an amplitude and a phase. The parameterized model comprises encoder-decoder architecture. In some embodiments, determining the latent space representation of the electric field image comprises minimizing a function constrained by a set of electric field images that could be predicted by the parameterized model based on the dimensional data in the latent space and the given input.

公开(公告)号：WO2021099051A1

公开(公告)日：2021-05-27

申请号：PCT/EP2020/079531

申请日：2020-10-20

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Qinghuang ,  MAAS, Ruben, Cornelis ,  WUISTER, Sander, Frederik

IPC: G03F7/004 ,  G03F7/039

Abstract: There is provided a polymer for use as a resist in the fabrication of integrated circuits. There is also provided a non-chemically amplified resist composition comprising a polymer having at least one scission portion comprising a light cleavable chemical linkage configured to preferentially break upon exposure of the resist composition to electromagnetic radiation. Also provided is the use of such resist compositions or polymers as well as a lithographic method incorporating such compositions or polymers.

公开(公告)号：WO2021099047A1

公开(公告)日：2021-05-27

申请号：PCT/EP2020/079403

申请日：2020-10-19

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LIESHOUT, Josephus, Peter ,  KOX, Ronald, Frank ,  BECKERS, Johan, Franciscus, Maria ,  MATHIJSSEN, Jesper, William, Peter ,  LAKKAD, Harshil, Jayantbhai ,  LAMERS, Inge, Catharina, Johanna

IPC: G03F7/20

Abstract: Methods of obtaining performance information about a lithography process are disclosed. In one arrangement, a resist on a substrate is exposed using the lithography process. A first measurement process is performed to detect a first set of imperfections on or in the exposed resist. The exposed resist is developed after the first measurement process. A second measurement process is performed after the exposed resist has been developed to detect a second set of imperfections. The first set of imperfections and the second set of imperfections are used to obtain performance information about the lithography process.

公开(公告)号：WO2021083704A1

公开(公告)日：2021-05-06

申请号：PCT/EP2020/079372

申请日：2020-10-19

Applicant: ASML NETHERLANDS B.V.

Inventor： ALPEGGIANI, Filippo ,  PELLEMANS, Henricus, Petrus, Maria ,  GOORDEN, Sebastianus, Adrianus ,  HUISMAN, Simon, Reinald

IPC: G03F9/00

Abstract: Disclosed is a method of metrology such as alignment metrology. The method comprises obtaining pupil plane measurement dataset at a pupil plane relating to scattered radiation resultant from a measurement of a structure. The method comprises determining a measurement value or correction therefor using the pupil plane measurement dataset and a sensor term relating to sensor optics used to perform said measurement.

公开(公告)号：WO2021083608A1

公开(公告)日：2021-05-06

申请号：PCT/EP2020/077611

申请日：2020-10-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Qiang ,  GUO, Yunbo ,  CAO, Yu ,  WANG, Jen-Shiang ,  LU, Yen-Wen ,  CHEN, Danwu ,  YANG, Pengcheng ,  LIANG, Haoyi ,  CHEN, Zhichao ,  PU, Lingling

IPC: G03F7/20

Abstract: A method for training a machine learning model to generate a predicted measured image includes obtaining (a) an input target image associated with a reference design pattern, and (b) a reference measured image associated with a specified design pattern printed on a substrate, wherein the input target image and the reference measured image are non-aligned images; and training, by a hardware computer system and using the input target image, the machine learning model to generate a predicted measured image.

公开(公告)号：WO2021078460A1

公开(公告)日：2021-04-29

申请号：PCT/EP2020/076639

申请日：2020-09-24

Applicant: ASML NETHERLANDS B.V.

Inventor： HAMOUDA, Ayman

IPC: G03F7/20 ,  G03F7/70441

Abstract: Described herein is a method for generating a retargeted pattern for a target pattern to be printed on a substrate. The method includes obtaining (i) the target pattern comprising at least one feature, the at least one feature having geometry including a first dimension and a second dimension, and (ii) a plurality of biasing rules defined as a function of the first dimension, the second dimension, and a property associated with features of the target pattern within a measurement region; determining values of the property at a plurality of locations on the at least one feature of the target pattern, each 5ocation surrounded by the measurement region; selecting, from the plurality of biasing rules based on the values of the property, a sub-set of biases; and generating the retargeted pattern by applying the selected sub-set of biases to the at least one feature of the target pattern.

公开(公告)号：WO2021074260A1

公开(公告)日：2021-04-22

申请号：PCT/EP2020/078976

申请日：2020-10-15

Applicant: ASML NETHERLANDS B.V.

Inventor： GOOSEN, Maikel, Robert ,  SMAKMAN, Erwin, Paul

IPC: H01J37/04 ,  H01J37/28

Abstract: Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.