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公开(公告)号：WO2023036542A1
公开(公告)日：2023-03-16
申请号：PCT/EP2022/072420
申请日：2022-08-10
Applicant: ASML NETHERLANDS B.V.
IPC: H01J37/22
Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a first scanning direction; obtaining a second SEM image of the target feature on the sample from a second electron beam scan in a second scanning direction different from the first scanning direction; aligning the first SEM image and the second SEM image; and generating an output image based a combination of the first SEM image and the second SEM image.
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公开(公告)号：WO2023016749A1
公开(公告)日：2023-02-16
申请号：PCT/EP2022/069880
申请日：2022-07-15
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20 , G01R31/305 , H01J37/28 , H01L21/66
Abstract: A method of determining an overlay measurement of a substrate includes: injecting charge into a charge injection element of the substrate; determining a first capacitance of a first pair of elements and a second capacitance of a second pair of elements; and determining a capacitance ratio based on the first capacitance and the second capacitance. The overlay measurement may be determined based on the capacitance ratio, which may indicate an imbalance.
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公开(公告)号：WO2023016723A1
公开(公告)日：2023-02-16
申请号：PCT/EP2022/069169
申请日：2022-07-08
Applicant: ASML NETHERLANDS B.V.
Inventor： WANG, Fuming , WIELAND, Marco, Jan-Jaco , CAO, Yu , ZHANG, Guohong
Abstract: An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.
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14.发明申请
公开(公告)号：WO2023016705A1
公开(公告)日：2023-02-16
申请号：PCT/EP2022/068625
申请日：2022-07-05
Applicant: ASML NETHERLANDS B.V.
Inventor： TEN HAAF, Gijs , HAVIK, Niels , ROOZE, Joost , TRAN, Vu, Quang
Abstract: Disclosed is a method for modeling alignment data over a substrate area relating to a substrate being exposed in a lithographic process. The method comprises obtaining alignment data relating to said substrate and separating the alignment data into a systematic component which is relatively stable between different substrates and a non-systematic component which is not relatively stable between different substrates. The systematic component and the non-systematic component are individually modeled and a process correction for the substrate determined based on the modeled systematic component and modeled non-systematic component.
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公开(公告)号：WO2023001655A1
公开(公告)日：2023-01-26
申请号：PCT/EP2022/069579
申请日：2022-07-13
Applicant: ASML NETHERLANDS B.V.
Abstract: A data processing device for detecting defects in sample image data generated by a charged particle assessment system, the device comprising: a first processing module configured to receive a sample image datastream from the charged particle assessment system, the sample image datastream comprising an ordered series of data points representing an image of the sample, and to apply a first defect detection test to select a subset of the sample image datastream as first selected data, wherein the first defect detection test is a localised test which is performed in parallel with receipt of the sample image datastream; and a second processing module configured to receive the first selected data and to apply a second defect detection test to select a subset of the first selected data as second selected data.
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Patent Agency Ranking
公开(公告)号：WO2023285071A1
公开(公告)日：2023-01-19
申请号：PCT/EP2022/066586
申请日：2022-06-17
Applicant: ASML NETHERLANDS B.V.
Inventor： HSU, Duan-Fu, Stephen , JIANG, Xiaohui , JIA, Ningning , LIU, Gengxin
Abstract: Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method comprising accessing diffraction order data based on the plurality of patterns that represent features to be formed on at least a portion of a wafer, the diffraction order data including a plurality of peaks corresponding to the plurality of patterns. The method also comprises identifying a subset of representative peaks from the plurality of peaks according to one or more grouping criteria, comprising identifying a first representative peak that covers another peak colinear with the first representative peak, wherein the first representative peak is a discrete peak having a frequency that is an integer multiple of frequency of another discrete peak. The method further comprises selecting the subset of critical patterns corresponding to the subset of representative peaks.
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17.发明申请
公开(公告)号：WO2023285066A1
公开(公告)日：2023-01-19
申请号：PCT/EP2022/066266
申请日：2022-06-15
Applicant: ASML NETHERLANDS B.V.
Inventor： WERKMAN, Roy , ROY, Sarathi
IPC: G03F7/20 , G01N21/956 , G03F9/00 , H01L21/66
Abstract: Described is a method and associated computer program and apparatuses for determining a correction for at least one control parameter, said at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method comprises: obtaining metrology data relating to said semiconductor manufacturing process or at least part thereof; obtaining associated data relating to said semiconductor manufacturing process or at least part thereof, said associated data providing information for interpreting the metrology data; and determining said correction based on said metrology data and said associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in said metrology data should be corrected based on said interpretation of said metrology data.
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公开(公告)号：WO2023280487A1
公开(公告)日：2023-01-12
申请号：PCT/EP2022/065032
申请日：2022-06-02
Applicant: ASML NETHERLANDS B.V.
Inventor： LIANG, Haoyi , CHEN, Zhichao , PU, Lingling , CHANG, Fang-Cheng , YU, Liangjiang , WANG, Zhe
Abstract: An improved systems and methods for correcting distortion of an inspection image are disclosed. An improved method for correcting distortion of an inspection image comprises acquiring an inspection image, aligning a plurality of patches of the inspection image based on a reference image corresponding to the inspection image, evaluating, by a machine learning model, alignments between each patch of the plurality of patches and a corresponding patch of the reference image, determining local alignment results for the plurality of patches of the inspection image based on a reference image corresponding to the inspection image, determining an alignment model based on the local alignment results, and correcting a distortion of the inspection image based on the alignment model.
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19.发明申请
公开(公告)号：WO2022268560A1
公开(公告)日：2022-12-29
申请号：PCT/EP2022/066044
申请日：2022-06-13
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
IPC: G03F7/20 , G03F7/70783 , G03F7/7085 , G03F7/70875
Abstract: Embodiments herein describe systems, methods, and devices for thermal conditioning of patterning devices at a lithographic apparatus. A patterning device cooling system for thermally conditioning a patterning device (202) of a lithographic apparatus is described, the cooling system including a thermal conditioner that thermally conditions the patterning device, and a controller that controls the thermal conditioner to determine a temperature state of the patterning device, determine a production state of the lithographic apparatus, and thermally condition the patterning device for exposures based on the temperature state and a production state of the lithographic apparatus.
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公开(公告)号：WO2022268468A1
公开(公告)日：2022-12-29
申请号：PCT/EP2022/064988
申请日：2022-06-02
Applicant: ASML NETHERLANDS B.V.
Inventor： ERSHOV, Alexander, Igorevich , DRIESSEN, Theodorus, Wilhelmus , TREES, Dietmar, Uwe, Herbert , TELKAR, Vikas, Giridhar
Abstract: Apparatus for and method of accelerating droplets used to generate EUV radiation that comprise an arrangement producing a laser beam directed to an irradiation region and a droplet source. The droplet source includes a fluid exiting a nozzle (200) in a stream that breaks up into droplets that then undergo coalescence. A gas provided for the purpose of accelerating the droplets is caused to flow past the nozzle in a streamwise direction.
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