公开(公告)号：WO2018148549A1

公开(公告)日：2018-08-16

申请号：PCT/US2018/017629

申请日：2018-02-09

Applicant: SUNEDISON SEMICONDUCTOR LIMITED

Inventor： KOMMU, Srikanth ,  PEIDOUS, Igor ,  WANG, Gang ,  LIBBERT, Jeffrey L. ,  RAPOPORT, Igor

IPC: H01L21/66 ,  G01R31/26

Abstract: Methods for assessing the quality of a semiconductor structure having a charge trapping layer (CTL) to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.

公开(公告)号：WO2017142849A1

公开(公告)日：2017-08-24

申请号：PCT/US2017/017756

申请日：2017-02-14

Applicant: SUNEDISON SEMICONDUCTOR LIMITED

Inventor： PEIDOUS, Igor ,  JONES, Andrew M. ,  KOMMU, Srikanth ,  MENDEZ, Horacio Josue

IPC: H01L21/20 ,  H01L21/762 ,  H01L27/12

CPC classification number: H01L21/76251 ,  H01L21/2007 ,  H01L27/1203

Abstract: A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).

Abstract translation: 提供了用于制造绝缘体上半导体结构的成本有效的工艺流程是平行的。 并联制备的多个绝缘体上半导体复合结构中的每一个包括电荷俘获层（CTL）。

公开(公告)号：WO2016140850A1

公开(公告)日：2016-09-09

申请号：PCT/US2016/019464

申请日：2016-02-25

Applicant: SUNEDISON SEMICONDUCTOR LIMITED ,  LIBBERT, Jeffrey Louis

Inventor： LIBBERT, Jeffrey Louis ,  WANG, Gang ,  THOMAS, Shawn G. ,  PEIDOUS, Igor

IPC: H01L21/02 ,  H01L21/763 ,  H01L21/762

CPC classification number: H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/763

Abstract: A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or oxynitride layer, a polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer. The multilayer structure is prepared in a manner that reduces wafer bow.

Abstract translation: 提供了半导体绝缘体多层结构。 多层包括高电阻率单晶半导体处理衬底，织构氧化物，氮化物或氧氮化物层，多晶硅层，电介质层和单晶半导体器件层。 以减少晶片弓的方式制备多层结构。

公开(公告)号：WO2015112308A1

公开(公告)日：2015-07-30

申请号：PCT/US2014/072546

申请日：2014-12-29

Applicant: SUNEDISON SEMICONDUCTOR LIMITED ,  PEIDOUS, Igor

Inventor： PEIDOUS, Igor ,  KOMMU, Srikanth ,  WANG, Gang ,  THOMAS, Shawn G.

IPC: H01L21/762

CPC classification number: H01L21/76251 ,  H01L21/76254

Abstract: A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided. The handle structure comprises an intermediate semiconductor layer between the handle substrate and the buried oxide layer. The intermediate semiconductor layer comprises a polycrystalline, amorphous, nanocrystalline, or monocrystalline structure and comprises a material selected from the group consisting of Si 1-x Ge x , Si 1-x C x , Si 1-x-y Ge x Sn y , Si 1-x-y-z Ge x Sn y C z , Ge 1-x Sn x , group IIIA-nitrides, semiconductor oxides, and any combination thereof.

Abstract translation: 提供了用于制造SOI结构的高电阻率单晶半导体手柄结构。 手柄结构包括在处理衬底和掩埋氧化物层之间的中间半导体层。 中间半导体层包括多晶，非晶，纳米晶体或单晶结构，并且包括选自Si1-xGex，Si1-xCx，Si1-x-yGexSny，Si1-xy-zGexSnyCz，Ge1-xSnx， IIIA-氮化物，半导体氧化物及其任何组合。

公开(公告)号：WO2014046893A1

公开(公告)日：2014-03-27

申请号：PCT/US2013/058726

申请日：2013-09-09

Applicant: ABENGOA BIOENERGY NEW TECHNOLOGIES, LLC

Inventor： NGUYEN, Quang A. ,  HE, Weidong ,  HOLMES, Leroy D.

IPC: D21C3/04 ,  B01F7/00 ,  D21C7/08 ,  D21C11/00

CPC classification number: B01F7/16 ,  B01F7/00633 ,  B01F7/00641 ,  B01F7/1675 ,  B01F7/22 ,  B01F15/0288 ,  B01F2215/0422 ,  D21C3/04 ,  D21C7/08 ,  D21C11/0007

Abstract: Soak vessels for impregnating biomass with a liquid such as a dilute acid and methods for impregnating biomass are disclosed. In some embodiments, the soak vessel includes an impeller assembly with impellers that create a vortex to submerge the biomass, that agitate and separate contaminants from the biomass and that direct biomass and contaminants to separate vessel outlets.

Abstract translation: 公开了用诸如稀酸的液体浸渍生物质的容器以及浸渍生物质的方法。 在一些实施例中，浸泡容器包括具有叶轮的叶轮组件，其产生涡流以淹没生物质，其搅动并分离污染物与生物质并将生物质和污染物直接分离出血管出口。

公开(公告)号：WO2012087653A1

公开(公告)日：2012-06-28

申请号：PCT/US2011/064545

申请日：2011-12-13

Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  GUPTA, Puneet ,  ERK, Henry Frank ,  GRABBE, Alexis

Inventor： GUPTA, Puneet ,  ERK, Henry Frank ,  GRABBE, Alexis

IPC: C01B6/04 ,  C01B33/04 ,  C01B33/107 ,  C25B1/14 ,  C25B1/18

CPC classification number: C25B1/14 ,  C01B6/04 ,  C01B33/043 ,  C25B1/24

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract translation: 公开了用于生产使用电解以再生其中的反应性组分的硅烷的方法和系统。 所述方法和系统可以相对于卤素，碱金属或碱土金属和/或氢基本上是闭环的。

公开(公告)号：WO2012054184A1

公开(公告)日：2012-04-26

申请号：PCT/US2011/053228

申请日：2011-09-26

Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  BHUSARAPU, Satish ,  HUANG, Yue ,  GUPTA, Puneet ,  KULKARNI, Milind S.

Inventor： BHUSARAPU, Satish ,  HUANG, Yue ,  GUPTA, Puneet ,  KULKARNI, Milind S.

IPC: C01B33/03

CPC classification number: C01B33/03

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of trichlorosilane are disclosed. The processes generally involve thermal decomposition of trichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract translation: 公开了通过三氯硅烷的热分解生产多晶硅的方法。 这些方法通常涉及在反应条件下操作的流化床反应器中三氯硅烷的热分解，其导致相对于常规生产方法的高生产率。

公开(公告)号：WO2012054170A1

公开(公告)日：2012-04-26

申请号：PCT/US2011/052691

申请日：2011-09-22

Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  BHUSARAPU, Satish ,  HUANG, Yue ,  GUPTA, Puneet

Inventor： BHUSARAPU, Satish ,  HUANG, Yue ,  GUPTA, Puneet

IPC: C01B33/027 ,  C01B33/03 ,  C01B33/039

CPC classification number: C01B33/027 ,  C01B33/03 ,  C01B33/039

Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.

Abstract translation: 公开了在基本上闭环过程中制造多晶硅。 这些方法通常包括由冶金级硅产生的三氯硅烷的分解。

公开(公告)号：WO2010077880A1

公开(公告)日：2010-07-08

申请号：PCT/US2009/068103

申请日：2009-12-15

Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  BHUSARAPU, Satish ,  GUPTA, Puneet

Inventor： BHUSARAPU, Satish ,  GUPTA, Puneet

IPC: C01B9/08 ,  C01B33/107

CPC classification number: B01J8/24 ,  B01J8/0055 ,  C01B9/08 ,  C01B33/10705 ,  C01P2004/61

Abstract: Processes and systems for preparing silicon tetrafluoride by the thermal decomposition of an alkali or alkaline earth-metal fluorosilicate in a fluidized bed reactor. A portion of silicon tetrafluoride that is generated in the decomposition reaction may be recycled to the reactor and used as a fluidizing gas to suspend the fluorosilicate material. Alkali or alkaline earth-metal fluoride residue generated in the decomposition reaction may be discharged from the reactor and reacted with fluorosilicic acid to produce an alkali or alkaline earth-metal fluorosilicate that may be introduced to the reactor for further generation of silicon tetrafluoride.

Abstract translation: 在流化床反应器中通过热分解碱金属或碱土金属氟硅酸盐来制备四氟化硅的方法和系统。 在分解反应中产生的四氟化硅的一部分可以再循环到反应器中并用作流化气体以悬浮氟硅酸盐材料。 在分解反应中产生的碱金属或碱土金属氟化物残留物可以从反应器中排出并与氟硅酸反应，生成可引入反应器的碱金属或碱土金属氟硅酸盐，以进一步产生四氟化硅。

公开(公告)号：WO2009064674A1

公开(公告)日：2009-05-22

申请号：PCT/US2008/082838

申请日：2008-11-07

Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  KORB, Harold, W. ,  PHILLIPS, Richard

Inventor： KORB, Harold, W. ,  PHILLIPS, Richard

IPC: C30B15/02 ,  C30B29/06

CPC classification number: C30B15/02 ,  C30B29/06

Abstract: A process is provided for controlling the amount of insoluble gas carried by a charge of granular polycrystalline silicon. The process comprises (i) charging a feeding container with granular polycrystalline silicon, (ii) forming an ambient atmosphere in the feeding container, the ambient atmosphere having a mole fraction of at least 0.9 of a gas having a solubility in molten silicon of at least about 5x1013 atoms/cm3 at a temperature near the melting point of silicon and at a pressure of about 1 bar (about 100 kPa), and (iii) reducing the pressure inside the charged feeding container.

Abstract translation: 提供了一种控制由粒状多晶硅的电荷携带的不溶性气体的量的方法。 该方法包括（i）向颗粒状多晶硅填充进料容器，（ii）在进料容器中形成环境气氛，环境气氛的摩尔分数至少为0.9，在熔融硅中的溶解度至少为0.9 在约1巴（约100kPa）的压力下，在接近熔点的温度下，约5×10 13原子/ cm 3，和（iii）降低加料进料容器内的压力。