公开(公告)号：WO2005050653A2

公开(公告)日：2005-06-02

申请号：PCT/US2004/037633

申请日：2004-11-12

Applicant: GRANDIS, INC. ,  PAKALA, Mahendra ,  HUAI, Yiming

Inventor： PAKALA, Mahendra ,  HUAI, Yiming

IPC: G11C

CPC classification number: G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using spin transfer. The at least one stress-assist layer is configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing. The reduction of spin-transfer switching current is due to stress exerted by the stress-assist layer on the magnetic elements during writing. Stability of the magnetic memory with respect to thermal fluctuations is not compromised because the energy barrier between the two magnetization states is unchanged once the switching current is turned off.

Abstract translation: 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁性元件并提供至少一个应力辅助层。 多个磁性元件中的每一个被配置为使用自旋转移来写入。 所述至少一个应力辅助层被配置为在写入期间在所述多个磁性元件中的至少一个磁性元件上施加至少一个应力。 自旋转移切换电流的减少归因于写入期间应力辅助层施加在磁性元件上的应力。 磁存储器相对于热波动的稳定性不会受到影响，因为一旦切换电流关闭，两个磁化状态之间的能量势垒就不会改变。

公开(公告)号：WO2004063760A3

公开(公告)日：2005-02-10

申请号：PCT/US2004000453

申请日：2004-01-09

Applicant: GRANDIS INC

Inventor： HUAI YIMING ,  ALBERT FRANK ,  NGUYEN PAUL P

IPC: G01R20060101 ,  G11C11/00 ,  G11C11/16

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.

Abstract translation: 公开了一种用于提供能够使用自旋转移效应进行写入的磁性元件和使用该磁性元件的磁性存储器的方法和系统。 磁性元件包括自旋隧道结，分离层和自旋阀。 在替代实施例中，自旋隧道结和/或自旋阀可以是双重的。 分离层位于自旋隧穿结的第一自由层和自旋阀的第二自由层之间。 分离层被配置为使得两个自由层被静磁耦合，优选地它们的磁化反平行。 在替代实施例中，具有双自旋阀和双自旋隧道结，可以省略分离层，并且使用反铁磁层提供适当的距离。 另一个实施例包括使元件成形，使得自旋阀具有比自旋隧道结更小的横向尺寸。

公开(公告)号：WO2004064073A2

公开(公告)日：2004-07-29

申请号：PCT/US2004/000304

申请日：2004-01-07

Applicant: GRANDIS, INC.

Inventor： NGUYEN, Paul, P. ,  HUAI, Yiming

IPC: G11C

CPC classification number: G11C11/15 ,  G11C11/5607

Abstract: A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer bas at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an anti ferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.

Abstract translation: 用于高密度存储器阵列的磁性元件包括可重置层和存储层。 可复位层具有通过至少一个外部产生的磁场在选定方向上设定的磁化。 当写入电流通过磁性元件时，存储层基于至少一个易磁化轴和基于自旋转移效应改变方向的磁化。 磁性元件的替代实施例包括由隧道势垒层，钉扎磁性层和抗铁磁性层形成的附加多层结构，其在预定方向上钉住被钉扎层的磁化。 磁性元件的另一替代实施例包括由隧道势垒层和具有与基本实施例的可重置层的磁矩不同的磁矩的第二可复位层形成的附加多层结构。

公开(公告)号：WO2004063760A2

公开(公告)日：2004-07-29

申请号：PCT/US2004/000453

申请日：2004-01-09

Applicant: GRANDIS, INC.

Inventor： HUAI, Yiming ,  ALBERT, Frank ,  NGUYEN, Paul, P.

IPC: G01R

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.

Abstract translation: 公开了一种用于提供能够使用自旋转移效应进行写入的磁性元件和使用该磁性元件的磁性存储器的方法和系统。 磁性元件包括自旋隧道结，分离层和自旋阀。 在替代实施例中，自旋隧道结和/或自旋阀可以是双重的。 分离层位于自旋隧穿结的第一自由层和自旋阀的第二自由层之间。 分离层被配置为使得两个自由层被静磁耦合，优选地它们的磁化反平行。 在替代实施例中，具有双自旋阀和双自旋隧道结，可以省略分离层，并且使用反铁磁层提供适当的距离。 另一个实施例包括使元件成形，使得自旋阀具有比自旋隧道结更小的横向尺寸。

公开(公告)号：WO2009061327A1

公开(公告)日：2009-05-14

申请号：PCT/US2007/084361

申请日：2007-11-09

Applicant: GRANDIS, INC. ,  WANG, Lien-Chang ,  HUAI, Yiming

Inventor： WANG, Lien-Chang ,  HUAI, Yiming

IPC: H01L29/00

CPC classification number: H01L43/12 ,  H01L21/76802 ,  H01L21/76829

Abstract: A method and system for fabricating a magnetic storage element are disclosed. The method and system include providing a magnetic storage stack including the magnetic storage element. In one aspect, the method and system include providing an etch stop layer covering the magnetic storage stack and providing an insulator on the etch stop layer. The magnetic storage stack includes a magnetic storage element and hard mask(s) that may be less than one hundred nanometers thick. The method and system also include removing a portion of the insulator above the magnetic storage stack, exposing a portion of the etch stop layer. The insulator is removed at a higher rate than the etch stop layer. The method and system also include removing the exposed portion of the etch stop layer, exposing a portion of the magnetic storage stack, and providing a conductor contacting the exposed portion of the magnetic storage stack.

Abstract translation: 公开了一种用于制造磁存储元件的方法和系统。 该方法和系统包括提供包括磁存储元件的磁存储堆叠。 在一个方面，该方法和系统包括提供覆盖该磁存储堆叠并在该蚀刻停止层上提供绝缘体的蚀刻停止层。 磁存储堆叠包括可能小于一百纳米厚的磁存储元件和硬掩模。 该方法和系统还包括去除磁存储堆叠上方的绝缘体的一部分，暴露一部分蚀刻停止层。 以比蚀刻停止层更高的速率除去绝缘体。 该方法和系统还包括去除蚀刻停止层的暴露部分，暴露磁存储堆叠的一部分，以及提供接触磁存储堆叠的暴露部分的导体。

公开(公告)号：WO2007035786A3

公开(公告)日：2009-05-07

申请号：PCT/US2006036572

申请日：2006-09-19

Applicant: GRANDIS INC ,  HUAI YIMING ,  DIAO ZHITAO ,  CHEN EUGENE YOUJUN

Inventor： HUAI YIMING ,  DIAO ZHITAO ,  CHEN EUGENE YOUJUN

IPC: G11C11/15

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11B5/3983 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/10

Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.

Abstract translation: 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。 每个自由铁磁层可以包括两层或更多层，并且可以是包括第一和第二铁磁层的多层自由铁磁性堆叠和在第一和第二铁磁层之间的非磁性间隔物。

公开(公告)号：WO2007025050A3

公开(公告)日：2009-04-16

申请号：PCT/US2006033093

申请日：2006-08-23

Applicant: GRANDIS INC ,  PAKALA MAHENDRA ,  CHEN EUGENE YOUJUN ,  HUAI YIMING

Inventor： PAKALA MAHENDRA ,  CHEN EUGENE YOUJUN ,  HUAI YIMING

IPC: G11C11/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/10

Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare- earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

Abstract translation: 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。 自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，不包括稀土的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。 双层包括稀土 - 过渡金属合金层和自旋电流增强层。 磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：WO2008157310A1

公开(公告)日：2008-12-24

申请号：PCT/US2008/066857

申请日：2008-06-13

Applicant: GRANDIS, INC. ,  CHEN, Eugene, Youjun ,  HUAI, Yiming ,  DRISKILL-SMITH, Alexander, A., G.

Inventor： CHEN, Eugene, Youjun ,  HUAI, Yiming ,  DRISKILL-SMITH, Alexander, A., G.

IPC: H01L29/76

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/7854 ,  Y10S977/935

Abstract: A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.

Abstract translation: 描述了一种磁性存储单元和结合该单元的磁性存储器。 磁存储单元包括至少一个磁性元件和至少一个非平面选择装置。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 磁存储器可以包括多个磁存储单元，对应于多个磁存储单元的多个位线以及对应于多个磁存储单元的多个源极线。

公开(公告)号：WO2008010957A3

公开(公告)日：2008-01-24

申请号：PCT/US2007/015987

申请日：2007-07-13

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  YUNFEI, Ding

Inventor： YUNFEI, Ding

IPC: G11C11/00

Abstract: A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

公开(公告)号：WO2007137055A2

公开(公告)日：2007-11-29

申请号：PCT/US2007/069014

申请日：2007-05-16

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  XIAO, Luo ,  WANG, Lien-chang

Inventor： XIAO, Luo ,  WANG, Lien-chang

IPC: H01L29/76 ,  H01L29/94 ,  G11C11/00 ,  G11C11/14 ,  H01L31/00

CPC classification number: H01L27/228 ,  G11C11/16 ,  H01L29/4238

Abstract: A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.

Abstract translation: 描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。 该方法和系统包括提供磁性元件并提供选择装置。 磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。 选择装置与磁性元件连接。 选择装置包括其中具有孔的门。 选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。