公开(公告)号：WO2008156232A1

公开(公告)日：2008-12-24

申请号：PCT/KR2007/005568

申请日：2007-11-06

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H04N5/335

CPC classification number: H01L27/14603 ,  H04N9/045 ,  H04N2209/045 ,  H04N2209/047

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract translation: 提供了具有宽的动态范围，良好的色彩再现和良好的分辨率的像素阵列以及使用像素阵列的图像传感器。 像素阵列包括多个第一类型光电二极管，多个第二类型光电二极管和多个图像信号转换电路。 多个第二类型光电二极管设置在二维排列的第一类型光电二极管之间。 多个图像信号转换电路设置在第一类型光电二极管和第二类型光电二极管之间，以处理由第一类型光电二极管和第二类型光电二极管检测的图像信号。 第一类型光电二极管的区域比第二类型光电二极管的区域宽。

公开(公告)号：WO2008114947A1

公开(公告)日：2008-09-25

申请号：PCT/KR2008/001332

申请日：2008-03-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  UHM, Jae Won

Inventor： LEE, Byoung Su ,  UHM, Jae Won

IPC: H01L31/10

CPC classification number: H01L31/02322

Abstract: The present invention relates to a photodiode, more particularly to a photodiode having a luminescence converter converting a short-wavelength incident light to a long-wavelength emitting light. The photodiode having a luminescence converter according to the present invention has a characteristic that the sensitivity of photodiode is uniform irrespective of a wavelength of an incident light, by converting a specific-wavelength incident light to a restricted-wavelength emitting light and allowing the converted light to be incident to a photodiode region.

Abstract translation: 光电二极管技术领域本发明涉及一种光电二极管，更具体地说涉及具有将短波长入射光转换为长波长发光的发光转换器的光电二极管。 具有根据本发明的发光转换器的光电二极管的特征在于，通过将特定波长的入射光转换成受限制的波长发光并且允许转换的光，光电二极管的灵敏度与入射光的波长无关， 入射到光电二极管区域。

公开(公告)号：WO2008093933A1

公开(公告)日：2008-08-07

申请号：PCT/KR2007/006725

申请日：2007-12-21

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L31/04

CPC classification number: H01L31/0468 ,  H01L31/0465 ,  Y02B10/12 ,  Y02E10/50

Abstract: Provided is a semitransparent crystalline silicon thin film solar cell using a crystalline silicon thin film, including a transparent substrate, an antireflection layer, first transparent electrodes, electricity generation regions, second transparent electrodes, insulating layers. The electricity generation regions include crystalline silicon thin films. Accordingly, the semitransparent crystalline silicon thin film solar cell has a simpler manufacturing process as compared with a semitransparent thin film solar cell using a conventional amorphous thin film and can control transmittance by controlling a thickness of the crystalline thin film without additional apparatuses.

Abstract translation: 提供一种半透明结晶硅太阳能电池，其使用包括透明基板，抗反射层，第一透明电极，发电区域，第二透明电极，绝缘层的晶体硅薄膜。 发电区域包括晶体硅薄膜。 因此，与使用常规非晶薄膜的半透明薄膜太阳能电池相比，半透明晶体硅薄膜太阳能电池具有更简单的制造工艺，并且可以通过控制晶体薄膜的厚度而无需额外的装置来控制透射率。

公开(公告)号：WO2008032933A1

公开(公告)日：2008-03-20

申请号：PCT/KR2007/003837

申请日：2007-08-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H04N5/335

CPC classification number: H04N5/374 ,  H04N5/3597 ,  H04N5/363

Abstract: Provided is a unit pixel which uses three transistors and a pixel array including the unit pixel. The unit pixel includes a photodiode, a charge passing unit, a reset controller, and a voltage converter. The pixel array has a structure in which a plurality of the unit pixels according to the present invention are two-dimensionally arrayed, and includes one or more reset power supply circuits which output two or more different supply voltages in response to a pixel selection control signal. Parts of a plurality of the unit pixels share a voltage output from the reset power supply circuit.

Abstract translation: 提供了使用三个晶体管的单位像素和包括单位像素的像素阵列。 单位像素包括光电二极管，电荷通过单元，复位控制器和电压转换器。 像素阵列具有其中根据本发明的多个单位像素被二维排列的结构，并且包括响应于像素选择控制信号而输出两个或更多个不同电源电压的一个或多个复位电源电路 。 多个单位像素的一部分共享从复位电源电路输出的电压。

公开(公告)号：WO2007148891A1

公开(公告)日：2007-12-27

申请号：PCT/KR2007/002876

申请日：2007-06-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  WON, Jun Ho

Inventor： LEE, Byoung Su ,  WON, Jun Ho

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明，由于可以稳定地对背照式光电二极管的表面进行处理，因此可以将背照式光电二极管形成为具有低暗电流，对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 另外，通过采用在不同基板上分别形成光电二极管和逻辑电路的三维结构，可以制造高密度的图像传感器。

公开(公告)号：WO2006109937A9

公开(公告)日：2007-11-15

申请号：PCT/KR2006001144

申请日：2006-03-29

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A separation type unit pixel of an image sensor, which can handle light that incidents onto a photodiode at various angles, and provides a zoom function in a mini camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The separation type unit pixel having a 3D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer. Accordingly, by forming an area for a photodiode and an area for a pixel almost the same, an image sensor can be manufactured to have a good sensitivity, without having to use a micro lens. In addition, by disposing the photodiode at the top layer, an incident angle margin of incident light can be secured, which has to be basically provided by the sensor for its auto focusing function or zoom function.

Abstract translation: 提供了可以处理以各种角度发生在光电二极管上的光并且通过确保入射角度边缘来提供微型相机模块中的变焦功能的图像传感器的分离型单位像素及其制造方法。 具有由多个晶体管组成的图像传感器的3D结构的分离型单位像素包括：第一晶片，其包括光电二极管，转移晶体管，浮动扩散区的节点，用作静电用于转换电荷 以及将浮动扩散区域和传输晶体管分别连接到外部电路的焊盘; 包括构成像素的其余电路元件（即，复位晶体管，源极跟随器晶体管和阻塞开关晶体管）的第二晶片，读出电路，垂直/水平解码器，相关双采样 （CDS）电路，其涉及传感器操作和图像质量，模拟电路，模数转换器（ADC），数字电路和连接每个像素的焊盘; 以及连接装置，其连接第一晶片的焊盘和第二晶片的焊盘。 因此，通过形成光电二极管的面积和像素的面积几乎相同，可以制造图像传感器以具有良好的灵敏度，而不必使用微透镜。 此外，通过将光电二极管设置在顶层，可以确保入射光的入射角度边缘，基本上必须由传感器提供入射光的自动聚焦功能或缩放功能。

公开(公告)号：WO2007094579A1

公开(公告)日：2007-08-23

申请号：PCT/KR2007/000643

申请日：2007-02-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14627

Abstract: Provided is a method of manufacturing image sensor capable of maximizing light condensing efficiency so that the light input through a micro-lens is condensed onto a light receiving element. According to the present invention, inner micro-lenses or a U-shaped nitride film are used to maximize light condensing efficiency of the light input through the micro-lens. Therefore, light condensing efficiency of the light condensed onto the light receiving element in the image sensor can be improved.

Abstract translation: 提供一种能够使聚光效率最大化的图像传感器的制造方法，使得通过微透镜输入的光被聚光到光接收元件上。 根据本发明，使用内部微透镜或U形氮化物膜来最大化通过微透镜输入的光的聚光效率。 因此，可以提高聚集在图像传感器中的光接收元件上的光的聚光效率。

公开(公告)号：WO2007021106A1

公开(公告)日：2007-02-22

申请号：PCT/KR2006/003164

申请日：2006-08-11

Applicant: SILICONFILE TECHNOLOGIES INC. ,  PARK, Cheol Soo ,  LEE, Do Young

Inventor： PARK, Cheol Soo ,  LEE, Do Young

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

Abstract: A new structure of a photodiode of a pixel in CMOS image sensor and a method of fabricating the same are provided. The photodiode is fabricated by using one photo mask, so that the number of masks decreases and the fabrication processes are simplified. In addition, two conducting layers constituting a photodiode are self-aligned, so that a fabrication process for connecting the photodiode and a transfer transistor is not required. Accordingly, a problem of channeling generated in a lower portion of a gate of the transfer transistor can be solved, so that an improved pixel can be fabricated.

Abstract translation: 提供CMOS图像传感器中的像素的光电二极管的新结构及其制造方法。 通过使用一个光掩模制造光电二极管，使得掩模的数量减少并且制造过程被简化。 此外，构成光电二极管的两个导电层是自对准的，因此不需要用于连接光电二极管和转移晶体管的制造工艺。 因此，可以解决在转移晶体管的栅极的下部产生的沟道问题，从而可以制造改进的像素。

公开(公告)号：WO2006137651A1

公开(公告)日：2006-12-28

申请号：PCT/KR2006/002273

申请日：2006-06-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  PARK, Cheol Soo

Inventor： PARK, Cheol Soo

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14689

Abstract: A method of manufacturing a pixel of an image sensor including a protruded photodiode capable of improving photosensitivity and reducing crosstalk between neighboring pixels and a pixel of an image sensor formed using the method are provided. The pixel of the semiconductor image sensor includes a protrudedly shaped photodiode on a surface of a semiconductor substrate. A surface area of the photodiode with respect to a surface area of the image sensor pixel increases to improve photosensitivity, and a microlens is not needed due to the improvement of the fill factor. In addition, the crosstalk of neighboring pixels can be removed.

Abstract translation: 提供一种制造图像传感器的像素的方法，该图像传感器包括能够提高光敏性并减少相邻像素之间的串扰并且使用该方法形成的图像传感器的像素的突出光电二极管。 半导体图像传感器的像素包括在半导体衬底的表面上的突出形状的光电二极管。 相对于图像传感器像素的表面区域的光电二极管的表面积增加以提高光敏性，并且由于填充因子的改善而不需要微透镜。 此外，可以去除相邻像素的串扰。

公开(公告)号：WO2006093386A1

公开(公告)日：2006-09-08

申请号：PCT/KR2006/000712

申请日：2006-03-02

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L21/60

CPC classification number: H01L24/81 ,  H01L25/50 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05556 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/00014

Abstract: A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al 0.83 Cu 0.17 alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.

Abstract translation: 提供了一种在不影响形成在两个半导体衬底上的电路的低温下形成在两个半导体衬底上的铝（Al）电极的接合方法。 该方法包括：（a）分别在两个半导体衬底上形成铝（Al）电极，并将包含铝（Al）和铜（Cu）的金属合金沉积到铝（Al）电极上; （b）使两个半导体衬底的铝（Al）电极彼此面对; 和（c）在低于沉积的金属合金的熔点的温度下加热铝（Al）电极，并在两个半导体衬底上施加特定的压力。 因此，可以在低于Al 0.83 Cu 0.17合金的熔点的温度下进行接合，而不会对在两个半导体衬底上形成的电路产生影响，并且可以 在施加压力的区域选择性地进行。