公开(公告)号：WO2005034196A9

公开(公告)日：2005-07-28

申请号：PCT/US2004032351

申请日：2004-09-30

Applicant: AVIZA TECH INC ,  LEE SANG-IN ,  OWYANG JON S ,  SENZAKI YOSHIHIDE ,  HELMS AUBREY L ,  KAPKIN KEREM

Inventor： LEE SANG-IN ,  OWYANG JON S ,  SENZAKI YOSHIHIDE ,  HELMS AUBREY L ,  KAPKIN KEREM

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/42 ,  C23C16/455 ,  C30B25/00 ,  H01L20060101 ,  H01L

CPC classification number: C23C16/45525 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/405 ,  C23C16/42 ,  C23C16/45553 ,  C30B25/165 ,  C30B29/16 ,  H01L21/3141 ,  H01L21/31645

Abstract: A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

Abstract translation: 提供了一种沉积铪基电介质膜的方法。 该方法包括使用臭氧的原子层沉积和包含铪前体的一种或多种反应物。 还提供了半导体器件。 该器件包括衬底，形成在衬底顶上的基于铪的电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

公开(公告)号：WO2005037847A1

公开(公告)日：2005-04-28

申请号：PCT/US2004/033622

申请日：2004-10-12

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  CHEN, Tianniu ,  XU, Chongying ,  BAUM, Thomas H.

Inventor： CHEN, Tianniu ,  XU, Chongying ,  BAUM, Thomas H.

IPC: C07F9/00

CPC classification number: C23C16/45553 ,  C07F9/005 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/28556 ,  Y10T29/49117

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract translation: 钽前体可用于通过诸如化学气相沉积和原子层沉积的方法在衬底上沉积氮化钽或钽氧化物材料。 这些前体可用于在具有铜金属化和/或铁电薄膜的微电子器件结构上形成钽基扩散阻挡层。

公开(公告)号：WO2005034196A2

公开(公告)日：2005-04-14

申请号：PCT/US2004032351

申请日：2004-09-30

Applicant: AVIZA TECH INC ,  LEE SANG-IN ,  OWYANG JON S ,  SENZAKI YOSHIHIDE ,  HELMS AUBREY L ,  KAPKIN KEREM

Inventor： LEE SANG-IN ,  OWYANG JON S ,  SENZAKI YOSHIHIDE ,  HELMS AUBREY L ,  KAPKIN KEREM

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/42 ,  C23C16/455 ,  C30B25/00 ,  H01L20060101 ,  H01L

CPC classification number: C23C16/45525 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/405 ,  C23C16/42 ,  C23C16/45553 ,  C30B25/165 ,  C30B29/16 ,  H01L21/3141 ,  H01L21/31645

Abstract: A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

Abstract translation: 提供了一种沉积铪基电介质膜的方法。 该方法包括使用臭氧和包含铪前体的一种或多种反应物的原子层沉积。 还提供了半导体器件。 该器件包括衬底，形成在衬底顶上的铪基电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

公开(公告)号：WO2004020689A3

公开(公告)日：2004-06-17

申请号：PCT/US0326789

申请日：2003-08-27

Applicant: MICRON TECHNOLOGY INC

Inventor： VAARTSTRA BRIAN A ,  WESTMORELAND DONALD L

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L29/78 ,  C23C16/00 ,  H01L21/00

CPC classification number: H01L21/31604 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45553

Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands.

公开(公告)号：WO2004020689A2

公开(公告)日：2004-03-11

申请号：PCT/US2003/026789

申请日：2003-08-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： VAARSTRA, Brian, A. ,  WESTMORELAND, Donald, L.

IPC: C23C16/40

CPC classification number: H01L21/02205 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31604

Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands.

Abstract translation: 使用气相沉积工艺和一种或多种包括有机胺配体和一种或多种前体化合物的前体化合物在基底上，特别是半导体衬底或衬底组件上形成（和形成）金属氧化物层的方法 包括有机氧化物配体。

公开(公告)号：WO02053798A1

公开(公告)日：2002-07-11

申请号：PCT/FR2001/004102

申请日：2001-12-20

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01M8/1246

CPC classification number: C23C16/45525 ,  C23C16/405 ,  C23C16/45553 ,  C23C16/45555 ,  H01M8/1246 ,  Y02E60/525 ,  Y02P70/56

Abstract: The invention concerns a method for depositing on the surface of a porous substrate, thin layers of at least a solid ionic conductor comprising at least a base oxide and at least a doping agent. The deposition is carried out from precursor ln of the metal ion of one of the base oxides, precursor II oxidising the precursor In and, precursor IIIm of one of the oxides inputting one of the doping agents; n and m being each an integer not less than 1. Said method consists in providing at least a base oxide in a first sequence, and at least a doping agent in a second sequence. The first sequence is repeated from 1 to 10 times, the second only once; the whole process constitutes a cycle. The deposition is produced for a (first/second) sequence ratio determined on the basis on the (doping agent(s)/basic oxide(s)) atomic ratio and for a number of cycles determined on the basis of the thickness of the thin layer, and finally for a specific contacting duration between precursors and substrate. The invention also concerns a fuel cell, and a cell containing such a thin layer.

Abstract translation: 本发明涉及一种沉积在多孔基材的表面上的方法，至少包含至少一种氧化物和至少一种掺杂剂的固体离子导体的薄层。 沉积是从氧化前体In中的一种氧化物前体II的氧化物的前体ln和输入其中一种掺杂剂的一种氧化物的前体IIIm进行的; n和m各自为不小于1的整数。所述方法包括以第一序列提供至少一种碱性氧化物，并且至少提供第二序列中的掺杂剂。 第一个序列重复1到10次，第二次只有一次; 整个过程构成一个循环。 基于（掺杂剂/碱性氧化物）原子比确定的（第一/第二）序列比率产生沉积，并且基于薄的厚度确定的多个循环 层，最后是在前体和底物之间的特定接触持续时间。 本发明还涉及燃料电池和包含这种薄层的电池。

公开(公告)号：WO02027063A2

公开(公告)日：2002-04-04

申请号：PCT/US2001/030507

申请日：2001-09-28

IPC: C23C16/42 ,  C07F9/09 ,  C07F9/11 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC classification number: H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 DEG C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 DEG C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Abstract translation: 金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。 例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热至300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。 类似地，磷酸二异丙酯的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，将磷酸锂膜沉积在加热到250℃的基底上，以交替的脉冲提供蒸气，产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

公开(公告)号：WO2018194899A1

公开(公告)日：2018-10-25

申请号：PCT/US2018/027191

申请日：2018-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： BAJAJ, Geetika ,  GORADIA, Prerna ,  VISSER, Robert Jan

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/324

CPC classification number: H01L21/0262 ,  C23C16/0272 ,  C23C16/04 ,  C23C16/24 ,  C23C16/45553 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02642

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer ("SAM") is used to achieve selective epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises exposing a substrate to a self-assembled monolayer ("SAM") forming molecule to selectively deposit a SAM film on an exposed dielectric material, wherein the substrate comprises the exposed dielectric material and an exposed silicon material. The SAM forming molecule is a chlorosilane molecule. The method further comprises epitaxially and selectively depositing a silicon-containing material layer on the exposed silicon material at a temperature of 400 degrees Celsius or lower. The method further comprises removing the SAM film from the exposed dielectric material.

公开(公告)号：WO2018129295A1

公开(公告)日：2018-07-12

申请号：PCT/US2018/012557

申请日：2018-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： LIU, Feng Q. ,  CHEN, Feng ,  ANTHIS, Jeffrey W. ,  THOMPSON, David ,  CHANG, Mei

IPC: C23C16/18 ,  C23C16/455

CPC classification number: C23C16/06 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76838

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：WO2018015305A1

公开(公告)日：2018-01-25

申请号：PCT/EP2017/067888

申请日：2017-07-14

Applicant: BASF SE

Inventor： LIMBURG, Carolin ,  LOEFFLER, Daniel ,  WILMER, Hagen ,  WALTER, Marc ,  REINERS, Matthias

IPC: C07F15/04 ,  C07F15/06

CPC classification number: C07F15/04 ,  C07F15/06 ,  C23C16/45553

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R 1 , R 2 , R 3 , R 4 , and R 5 are independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2, M is Ni or Co, X is a σ-donating ligand which coordinates M, m is 1 or 2 and n is 0 to 3.

Abstract translation: 本发明属于在基材上产生无机薄膜的方法领域。 特别地，本发明涉及一种方法，其包括使通式（I）的化合物进入气态或气溶胶状态并且将通式（I）的化合物从气态或气溶胶状态沉积到固体基质上， R 1，R 2，R 3，R 4和R 5独立地为独立的 烷基，链烯基，芳基或甲硅烷基，p为1,2，M为Ni或Co，X为配位M的σ供体配体，m为1或2，和 n是0到3。