公开(公告)号：WO2009011816A1

公开(公告)日：2009-01-22

申请号：PCT/US2008/008579

申请日：2008-07-14

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION ,  SINGH, Narsingh, Bahadur ,  WAGNER, Brian, P. ,  KNUTESON, David, J. ,  KAHLER, David ,  BERGHMANS, Andre, E. ,  AUMER, Michael ,  HEDRICK, Jerry, W. ,  SHERWIN, Marc, E. ,  FITELSON, Michael, M. ,  USEFARA, Mark, S. ,  MCLAUGHLIN, Sean ,  RANDALL, Travis ,  KNIGHT, Thomas, J.

Inventor： SINGH, Narsingh, Bahadur ,  WAGNER, Brian, P. ,  KNUTESON, David, J. ,  KAHLER, David ,  BERGHMANS, Andre, E. ,  AUMER, Michael ,  HEDRICK, Jerry, W. ,  SHERWIN, Marc, E. ,  FITELSON, Michael, M. ,  USEFARA, Mark, S. ,  MCLAUGHLIN, Sean ,  RANDALL, Travis ,  KNIGHT, Thomas, J.

IPC: H01L33/00 ,  H01L21/02 ,  C30B29/36 ,  C30B25/02

CPC classification number: C30B25/105 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  Y10T428/259

Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

Abstract translation: 公开了一种在Si衬底上生长含SiC膜的方法。 可以通过例如等离子体溅射，化学气相沉积或原子层沉积在Si衬底上形成含SiC的膜。 这样生长的含SiC膜提供了用于生长半导体晶体的昂贵的SiC晶圆的替代方案。

公开(公告)号：WO2008014434A3

公开(公告)日：2008-10-02

申请号：PCT/US2007074549

申请日：2007-07-27

Applicant: CARACAL INC ,  KORDINA OLOF CLAES ERIK ,  RAO SHAILAJA

Inventor： KORDINA OLOF CLAES ERIK ,  RAO SHAILAJA

IPC: C30B25/00 ,  C30B11/00 ,  C30B27/02

CPC classification number: C30B29/36 ,  C23C16/45519 ,  C30B25/08 ,  C30B25/14 ,  C30B29/403 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262

Abstract: A crystal growth process comprising providing a reactor having a crucible with an injector apparatus and a seed holder. The injector apparatus has an inner gas conduit and an outer gas conduit wherein an inert gas is introduced into the outer conduit. The injector apparatus has an upper injector and a lower injector and a gap therebetween. The upper injector temperature is maintained at a higher temperature than the lower injector.

Abstract translation: 一种晶体生长方法，包括提供具有注射器装置和种子保持器的具有坩埚的反应器。 注射器装置具有内部气体导管和外部气体导管，其中惰性气体被引入到外部导管中。 注射器装置具有上注射器和下注射器以及它们之间的间隙。 上喷射器温度保持在比下喷射器更高的温度。

公开(公告)号：WO2008102258A2

公开(公告)日：2008-08-28

申请号：PCT/IB2008000463

申请日：2008-02-29

Applicant: INNOVALIGHT INC ,  POPLAVSKYY DMITRY ,  MASON TERRY

Inventor： POPLAVSKYY DMITRY ,  MASON TERRY

IPC: H01L21/208

CPC classification number: H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02601 ,  H01L21/02628

Abstract: A method for producing a thin film promoter layer is disclosed. The method includes depositing a Group IV semiconductor ink on a substrate, the Group IV semiconductor ink including a set of Group IV semiconductor nanoparticles and a set of metal nanoparticles to form a porous compact. The method also includes heating the substrate to a first temperature between about 350°C to about 765°C and for a first time period between 5 min to about 3 hours.

Abstract translation: 公开了一种制造薄膜启动层的方法。 该方法包括在基板上沉积IV族半导体油墨，该IV族半导体油墨包括一组IV族半导体纳米颗粒和一组金属纳米颗粒以形成多孔压块。 该方法还包括将基底加热至约350℃至约765℃之间的第一温度和5分钟至约3小时之间的第一时间。

公开(公告)号：WO2008073930A1

公开(公告)日：2008-06-19

申请号：PCT/US2007/087061

申请日：2007-12-11

Applicant: APPLIED MATERIALS, INC. ,  YE, Zhiyuan ,  LAM, Andrew ,  KIM, Yihwan

Inventor： YE, Zhiyuan ,  LAM, Andrew ,  KIM, Yihwan

IPC: C30B23/00 ,  C30B25/00

CPC classification number: H01L29/7834 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66628 ,  H01L29/7848

Abstract: Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.

Abstract translation: 公开了形成含硅外延层的方法。 具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。 实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

公开(公告)号：WO2008073763A2

公开(公告)日：2008-06-19

申请号：PCT/US2007/086376

申请日：2007-12-04

Applicant: INNOVALIGHT, INC. ,  LEMMI, Francesco ,  ROGOJINA, Elena V. ,  YU, Pingrong ,  JURBERGS, David ,  ANTONIADIS, Homer ,  KELMAN, Maxim

Inventor： LEMMI, Francesco ,  ROGOJINA, Elena V. ,  YU, Pingrong ,  JURBERGS, David ,  ANTONIADIS, Homer ,  KELMAN, Maxim

IPC: H01L21/208

CPC classification number: H01L21/02601 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02667 ,  Y10S977/892 ,  Y10S977/893

Abstract: A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30°C and about 300°C, and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25°C and about 60° C; and heating the porous compact to a third temperature between about 100° C and about 1000° C, and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.

Abstract translation: 公开了在腔室中形成致密纳米颗粒薄膜的方法。 该方法包括将衬底放置在腔室中; 和沉积纳米粒子墨水，纳米粒子墨水包括一组第IV族半导体粒子和溶剂。 该方法还包括将纳米粒子墨水加热至约30℃和约300℃之间的第一温度以及约1分钟和约60分钟之间的第一时间段，其中溶剂基​​本上被除去，并且多孔致密物是 形成。 所述方法进一步包括将所述多孔压制品暴露于HF蒸气约2分钟至约20分钟之间的第二时间段，并将所述多孔压制品加热至约25℃至约60℃之间的第二温度。 C; 并将多孔团块加热至约100℃之间的第三温度; C和约1000℃; 并且持续约5分钟至约10小时的第三时间段; 其中形成致密的纳米颗粒薄膜。

公开(公告)号：WO2008011022A1

公开(公告)日：2008-01-24

申请号：PCT/US2007/016192

申请日：2007-07-17

Applicant: DOW CORNING CORPORATION ,  CHUNG, Gilyong ,  LOBODA, Mark

Inventor： CHUNG, Gilyong ,  LOBODA, Mark

IPC: C30B25/02 ,  C30B29/36

CPC classification number: H01L21/02529 ,  C23C16/325 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixture comprising a chlorosilane gas, a carbon- containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000 °C but less than 2000 °C; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. This invention also relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon- containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000 °C but less than 2000 °C; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr.

Abstract translation: 本发明涉及一种用于将碳化硅材料沉积到衬底上的方法，使得所得到的衬底具有0.5-1000微秒的载流子寿命，该方法包括a。 将含有氯代硅烷气体，含碳气体和氢气的气体混合物引入含有基板的反应室中; 和b。 将基板加热到大于1000℃但小于2000℃的温度; 条件是反应室内的压力保持在0.1至760托的范围内。 本发明还涉及一种用于将碳化硅材料沉积到衬底上的方法，使得所得到的衬底具有0.5-1000微秒的载流子寿命，该方法包括a。 将含有非氯化含硅气体，氯化氢，含碳气体和氢气的气体混合物引入含有基板的反应室中; 和b。 将基板加热到大于1000℃但小于2000℃的温度; 条件是反应室内的压力保持在0.1至760托的范围内。

公开(公告)号：WO2007078802A3

公开(公告)日：2008-01-24

申请号：PCT/US2006047646

申请日：2006-12-14

Applicant: ASM INC ,  BAUER MATTHIAS

Inventor： BAUER MATTHIAS

IPC: H01L21/20 ,  H01L21/36

CPC classification number: C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method for depositing a carbon doped epitaxial semiconductor layer (30) comprises maintaining a pressure of greater than about 700 torr in a process chamber (122) housing a patterned substrate (10) having exposed single crystal material (20). The method further comprises providing a flow of a silicon source gas to the process chamber (122). The silicon source gas comprises dichlorosilane. The method further comprises providing a flow of a carbon precursor (132) to the process chamber (122). The method further comprises selectively depositing the carbon doped epitaxial semiconductor layer (30) on the exposed single crystal material (20).

Abstract translation: 沉积碳掺杂外延半导体层（30）的方法包括在容纳具有暴露的单晶材料（20）的图案化衬底（10）的处理室（122）中保持大于约700托的压力。 该方法还包括向处理室（122）提供硅源气体的流动。 硅源气体包括二氯硅烷。 该方法还包括向处理室（122）提供碳前体（132）的流动。 所述方法还包括在所述暴露的单晶材料（20）上选择性地沉积碳掺杂的外延半导体层（30）。

公开(公告)号：WO2007147670A1

公开(公告)日：2007-12-27

申请号：PCT/EP2007/054172

申请日：2007-04-27

Applicant: ROBERT BOSCH GMBH ,  BENZEL, Hubert ,  ILLING, Matthias ,  LAERMER, Franz ,  KRONMUELLER, Silvia ,  FARBER, Paul ,  ARMBRUSTER, Simon ,  LAMMEL, Gerhard ,  REICHENBACH, Ralf ,  SCHELLING, Christoph ,  FEYH, Ando

Inventor： BENZEL, Hubert ,  ILLING, Matthias ,  LAERMER, Franz ,  KRONMUELLER, Silvia ,  FARBER, Paul ,  ARMBRUSTER, Simon ,  LAMMEL, Gerhard ,  REICHENBACH, Ralf ,  SCHELLING, Christoph ,  FEYH, Ando

IPC: H01L21/20

CPC classification number: H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

Abstract: Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines Siliziumsubstrats (1), umfassend die Schritte Bereitstellen eines Siliziumsubstrats mit einer im Wesentlichen ebenen Siliziumoberfläche, Herstellen einer porösen Siliziumoberfläche mit einer Vielzahl von Poren (2), insbesondere mit Makroporen und/oder Mesoporen und/oder Nanoporen, Aufbringen eines in das Silizium einzubringenden Füllmaterials, welches einen Durchmesser aufweist, der kleiner als ein Durchmesser der Poren (2) ist, Einbringen des Füllmaterials (3) in die Poren (2), gegebenenfalls Entfernen von überflüssigem Füllmaterial (3) von der Siliziumoberfläche, und Tempern des mit dem in die Poren (2) eingefüllten Füllmaterials (3) versehenen Siliziumsubstrats (1) bei einer Temperatur zwischen ca. 1000°C bis ca. 1400°C, um die erzeugten Poren (2) wieder zu schließen und das Füllmaterial (3) einzuschließen.

Abstract translation: 本发明涉及一种方法，用于制造的硅衬底（1），包括：提供具有基本上是平面的硅表面的硅衬底的步骤，准备具有多个孔（2）的多孔硅表面，特别是与大孔和/或孔，和/或 纳米孔，施加到被引入到硅填料，其直径比直径的孔（2）的小，填充材料引入（3）进入所述孔（2），任选地除去从过量的填料（3）的 硅表面，以及退火填充到孔中（2）（1）提供（3）硅衬底在温度为约1000℃至约1400℃的填充材料以关闭所创建的孔（2）再次，和 括填充材料（3）。

公开(公告)号：WO2007140375A2

公开(公告)日：2007-12-06

申请号：PCT/US2007/069894

申请日：2007-05-29

Applicant: ASM AMERICA, INC. ,  TOMASINI, Pierre ,  WEN, Jianqing ,  BERTRAM, Ronald ,  ARENA, Chantal ,  BAUER, Matthias ,  CODY, Nyles

Inventor： TOMASINI, Pierre ,  WEN, Jianqing ,  BERTRAM, Ronald ,  ARENA, Chantal ,  BAUER, Matthias ,  CODY, Nyles

IPC: H01L21/205

CPC classification number: H01L21/28518 ,  C23C16/04 ,  C23C16/24 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

Abstract: Chloropolysilanes are utilized in methods and systems for selectively depositing thin films useful for the fabrication of various devices such as microelectronic and/or microelectromechanical systems (MEMS).

Abstract translation: 氯多硅烷用于选择性沉积薄膜的方法和系统中，薄膜可用于制造诸如微电子和/或微机电系统（MEMS）的各种装置。

公开(公告)号：WO2007130916A2

公开(公告)日：2007-11-15

申请号：PCT/US2007/067806

申请日：2007-04-30

Applicant: APPLIED MATERIALS, INC. ,  KIM, Yihwan ,  FOAD, Majeed A. ,  CHO, Yonah ,  YE, Zhiyuan ,  ZOJAJI, Ali ,  SANCHEZ, Errol

Inventor： KIM, Yihwan ,  FOAD, Majeed A. ,  CHO, Yonah ,  YE, Zhiyuan ,  ZOJAJI, Ali ,  SANCHEZ, Errol

IPC: C23C16/00 ,  B05D3/02 ,  C30B23/00 ,  C30B25/00

CPC classification number: H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

Abstract: A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950°C so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000°C and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030°C and 1050°C. In certain embodiments, a structure having an abrupt p-n junction is provided.

Abstract translation: 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实质退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。 在某些实施例中，提供具有突变p-n结的结构。