公开(公告)号：WO2004055247A1

公开(公告)日：2004-07-01

申请号：PCT/GB2003/005418

申请日：2003-12-11

Applicant: TECHNOLOGY DEVELOPMENT ASSOCIATE OPERATIONS LTD ,  LOWE, John, M.

Inventor： LOWE, John, M.

IPC: C25D5/08

CPC classification number: C25D7/0614 ,  C25D5/08

Abstract: Electroplating station (S) has a mesh (11) located at a throat section (12) of passageway (4) shortly before the start of the guide (7) thereby to cause and/or enhance the production of vortices by guide (7) and/or the serrations. At its narrowest, throat (12) is about 5 x 10 -3 metres across. The mesh is a polyester mesh N8 type of 34.6 threads 10" 2 metres with a thread diameter of 1.04 x 10 -4 metres giving a maximum open area of 38 %. In a variant, a mesh (13) is located further upstream in passageway (4) as an alternative and/or as an addition to mesh (11). When both meshes (11 and 13) are provided, they can be identical or of different characteristics, for example mesh (13) may be of a coarser form with a greater open area and/or finer thread diameter, and mesh (11) may be of a finer form with less open area and/or thicker thread diameter. In further variants, mesh (11) and/or mesh (13) may extend over only part of the passageway (4) or may be replaced by a rigid grid, a series of elongate bars with corresponding elongate apertures, or other orificed structure.

Abstract translation: 电镀站（S）具有位于引导件（7）开始之前不久的通道（4）的喉部（12）处的网状物（11），从而通过引导件（7）引起和/或增强涡流的产生， 和/或锯齿。 在最狭窄的地方，喉咙（12）的距离约为5×10 -3米。 该网是一种聚乙烯网N8型34.6螺纹10“<2>米，螺纹直径为1.04×10 -4米，最大开放面积为38％，在一个变型中，网格（13）位于 在通道（4）中进一步上游作为网格（11）的替代和/或添加，当提供两个网格（11和13）时，它们可以是相同或不同的特征，例如网格（13）可以是 具有更大的开口面积和/或更细的螺纹直径的较粗糙的形式，并且网状物（11）可以具有较小的开口面积和/或更粗的螺纹直径的更细的形式，在另外的变型中，网格（11）和/或网格 （13）可以仅延伸通过通道（4）的一部分，或者可以由刚性网格，一系列具有对应的细长孔的细长条或其他有孔结构来代替。

公开(公告)号：WO03033770A3

公开(公告)日：2003-09-18

申请号：PCT/US0233530

申请日：2002-10-21

Applicant: VIASYSTEMS GROUP INC

Inventor： KEMPEN HEIN VAN

IPC: C25D5/02 ,  C25D5/08 ,  C25D7/00 ,  C25D17/00 ,  C25D17/06 ,  C25D21/10 ,  H05K3/00 ,  H05K3/18 ,  H05K3/42 ,  C25B9/00 ,  C25D5/20

CPC classification number: H05K3/0088 ,  C25D5/02 ,  C25D5/024 ,  C25D5/08 ,  C25D5/20 ,  C25D7/123 ,  C25D17/001 ,  H05K3/423

Abstract: The present invention includes an electrolytic plating system with an elecrolytic plating bath, means for positioning the printed circuit boards in the bath, and means to alternately generate a laminar flow of electrolyte on each side of the printed circuit boards. A preferred means to alternately generate a laminar flow of electolyte comprises a floating shield (20) with a venturi-shaped partition (25) and an aligned partition (24) below the printed circuit boards, and operating a plurality of eductors (22) below the floating shield. The means to alternately generate a laminar flow of electrolyte can further comprise a transport mechanism that moves the floating shield and its partitions from side to side relative to the eductors or a mechanism to move the eductors. The plating can be also be improved by using a vibrator and a spring-mounting system that prevents vibration energy being absorbed by fixed portions of the plating system.

Abstract translation: 本发明包括具有电解电镀槽的电解电镀系统，用于将印刷电路板定位在电镀槽中的装置，以及在印刷电路板的每一侧交替地产生电解质层流的装置。 交替产生电解液层流的优选方法包括在印刷电路板下方具有文丘里形分隔壁（25）和对准的隔板（24）的浮动屏蔽件（20）和在下面操作多个喷射器（22） 浮动盾牌。 交替地产生电解质层流的装置还可以包括传送机构，其使浮动屏蔽件及其隔板相对于喷射器从一侧移动到另一侧，或移动喷射器的机构。 还可以通过使用振动器和弹簧安装系统来改善电镀，该系统防止电镀系统的固定部分吸收的振动能量。

公开(公告)号：WO0245476A3

公开(公告)日：2003-02-13

申请号：PCT/US0146910

申请日：2001-12-07

Applicant: SEMITOOL INC ,  CHEN LINLIN ,  WILSON GREGORY J ,  MCHUGH PAUL R ,  WEAVER ROBERT A ,  RITZDORF THOMAS L

Inventor： CHEN LINLIN ,  WILSON GREGORY J ,  MCHUGH PAUL R ,  WEAVER ROBERT A ,  RITZDORF THOMAS L

IPC: C25D3/38 ,  C25D5/02 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  C25D17/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768 ,  C25D17/12

CPC classification number: H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

Abstract: A process and reactor for electrochemical processing of at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container (37) having a plurality of anodes (1095) disposed at different elevation in the principal fluid flow chamber so as to place them at different distances from a microelectronic workpiece under the process. One or more of the plurality of anodes may be in close proximity to the workpiece during the process. Still further, one or more of the plurality of anodes may be a virtual anode.

Abstract translation: 阐述了用于微电子工件的至少一个表面的电化学处理的工艺和反应器。 反应器包括反应器头，其包括工件支撑件，该工件支撑件具有定位成与微电子工件电接触的一个或多个电触点。 反应器还包括处理容器（37），其具有设置在主流体流动室中不同高度处的多个阳极（1095），以便将它们放置在与该工艺下的微电子工件不同的距离处。 在该过程中，多个阳极中的一个或多个可以紧邻工件。 此外，多个阳极中的一个或多个可以是虚拟阳极。

公开(公告)号：WO0245476A9

公开(公告)日：2002-09-06

申请号：PCT/US0146910

申请日：2001-12-07

Applicant: SEMITOOL INC ,  CHEN LINLIN ,  WILSON GREGORY J ,  MCHUGH PAUL R ,  WEAVER ROBERT A ,  RITZDORF THOMAS L

Inventor： CHEN LINLIN ,  WILSON GREGORY J ,  MCHUGH PAUL R ,  WEAVER ROBERT A ,  RITZDORF THOMAS L

IPC: C25D3/38 ,  C25D5/02 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  C25D17/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

Abstract: A process and reactor for electrochemical processing of at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container (37) having a plurality of anodes (1095) disposed at different elevation in the principal fluid flow chamber so as to place them at different distances from a microelectronic workpiece under the process. One or more of the plurality of anodes may be in close proximity to the workpiece during the process. Still further, one or more of the plurality of anodes may be a virtual anode.

Abstract translation: 阐述了用于微电子工件的至少一个表面的电化学处理的工艺和反应器。 反应器包括反应器头，其包括工件支撑件，该工件支撑件具有一个或多个电触头，其定位成与微电子工件电接触。 反应器还包括处理容器（37），其具有设置在主流体流动室中不同高度处的多个阳极（1095），以便将它们放置在与该工艺下的微电子工件不同的距离处。 在该过程中，多个阳极中的一个或多个可以紧邻工件。 此外，多个阳极中的一个或多个可以是虚拟阳极。

公开(公告)号：WO01012880A3

公开(公告)日：2001-10-04

申请号：PCT/DE2000/002444

申请日：2000-07-25

IPC: C25D1/04 ,  C25D3/38 ,  H05K1/09 ,  H05K3/04 ,  C25D5/08

CPC classification number: H05K1/09 ,  C25D1/04 ,  C25D3/38 ,  H05K3/041 ,  H05K3/046 ,  H05K2201/0355

Abstract: The invention relates to a method for the production of a self-supporting copper foil, which, due to its structure, presents low shear resistance, and can be embossed to have sharp edges. The copper foil is electrodeposited onto a cathode cylinder immersed in an electrolytic copper bath and surrounded by a rotating anode coil. Said copper foil is then detached from the cathode cylinder. A standard electrolytic copper bath is used with such additives as to give the copper foil a laminar-structured dentritic hardness. The laminar extruded structure provides the copper foil thus produced with a reinforced hardness, thus increasing its brittleness. This provides the copper with substantially enhanced contour acuity when embossing is carried out.

Abstract translation: 描述了一种用于生产具有低的剪切强度的自支撑铜箔的方法，由于其结构和是锋利的压纹，其特征在于，在以铜电解液浸渍和由阳极筐旋转阴极滚筒包围，该铜箔被剥离并电沉积到阴极辊。 在这种情况下，使用标准的铜电解液槽，这种添加剂导致具有层状微结构结构的铜箔的树枝状生长。 从这种层状微结构结构导致根据本发明生产的铜箔的硬度增加。 硬度增加伴随着脆性增加，这在压花铜箔时显着改善了轮廓锋利度。

公开(公告)号：WO01068949A1

公开(公告)日：2001-09-20

申请号：PCT/GB2001/001087

申请日：2001-03-13

IPC: C25D5/02 ,  C25D5/08 ,  C25D7/12 ,  C25D17/00 ,  C25D17/12 ,  C25D21/00 ,  C25D21/12

CPC classification number: C25D5/02 ,  C25D5/08 ,  C25D17/005 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12

Abstract: A single delivery channel is formed by, and between, inner wall (2) and baffle (3). Electrolyte (5) is pumped up the interior of channel (1) and is directed onto substrate (4) being a cathode maintained at -10 volts. The upper part of the inner wall (2) of channel (1) forms the anode such that electrolyte is forced between the substrate and the upper horizontal surface of the anode (6). A second baffle (7) is provided in order to assist in collecting and removing electrolyte (5) after impingement with substrate (4), possible for re-use. Contact between the electrolyte (5) and substrate (4) is optimised by providing the electrolyte with a swirling motion as it passes up channel (1). Anode (6) is a solid conducting bar (10), alternatively it is formed of solid rods (11) or tubes (12).

Abstract translation: 单个输送通道由内壁（2）和挡板（3）之间和之间形成。 将电解质（5）泵送到通道（1）的内部，并被引导到保持在-10伏特的阴极的基板（4）上。 通道（1）的内壁（2）的上部形成阳极，使得电解质被迫在基板和阳极（6）的上水平表面之间。 提供第二挡板（7），以帮助在与基板（4）冲击之后收集和去除电解质（5），从而可以重新使用。 电解质（5）和基底（4）之间的接触通过在电流通过通道（1）时提供旋转运动来优化。 阳极（6）是固体导电棒（10），或者其由实心棒（11）或管（12）形成。

公开(公告)号：WO0061498A3

公开(公告)日：2001-01-25

申请号：PCT/US0010120

申请日：2000-04-13

Applicant: SEMITOOL INC ,  WILSON GREGORY J ,  HANSON KYLE M ,  MCHUGH PAUL R

Inventor： WILSON GREGORY J ,  HANSON KYLE M ,  MCHUGH PAUL R

IPC: C25D7/12 ,  B05C3/00 ,  B05C3/20 ,  B23H3/00 ,  C02F20060101 ,  C25B9/00 ,  C25C7/00 ,  C25D3/02 ,  C25D5/00 ,  C25D5/04 ,  C25D5/08 ,  C25D7/00 ,  C25D11/32 ,  C25D17/00 ,  C25D17/02 ,  C25D17/12 ,  C25D21/00

CPC classification number: C25D17/02 ,  C25D5/08 ,  C25D17/001 ,  Y10S204/07

Abstract: A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container (610) having a plurality of nozzles (530) angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes (785) are disposed at different elevations in the principal fluid flow chamber so as to place them at different distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also relates to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

Abstract translation: 阐述了用于电化学处理微电子工件的至少一个表面的反应器。 反应器包括反应器头，其包括工件支撑件，该工件支撑件具有一个或多个电触点，其定位成与微电子工件电接触。 反应器还包括处理容器（610），其具有多个喷嘴（530），所述多个喷嘴（530）成角度地设置在主流体流动室的侧壁中，主流体流动室内的水平面处于通常容纳在其中的处理流体槽的表面下方 在电化学处理过程中。 多个阳极（785）设置在主流体流动室中的不同高度处，以便将它们放置在与正在加工的微电子工件不同的距离处，而在多个阳极和正在处理的微电子工件之间没有中间扩散器。 多个阳极中的一个或多个可以紧邻正在处理的工件。 此外，多个阳极中的一个或多个可以是虚拟阳极。 本发明还涉及主流体流动室内的多级阳极配置及其使用方法。

公开(公告)号：WO00061498A2

公开(公告)日：2000-10-19

申请号：PCT/US2000/010120

申请日：2000-04-13

IPC: C25D7/12 ,  B05C3/00 ,  B05C3/20 ,  B23H3/00 ,  C02F20060101 ,  C25B9/00 ,  C25C7/00 ,  C25D3/02 ,  C25D5/00 ,  C25D5/04 ,  C25D5/08 ,  C25D7/00 ,  C25D11/32 ,  C25D17/00 ,  C25D17/02 ,  C25D17/12 ,  C25D21/00 ,  C02F

CPC classification number: C25D17/02 ,  C25D5/08 ,  C25D17/001 ,  Y10S204/07

Abstract: A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at different distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also relates to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

Abstract translation: 阐述了用于电化学处理微电子工件的至少一个表面的反应器。 反应器包括反应器头，其包括工件支撑件，该工件支撑件具有定位成与微电子工件电接触的一个或多个电触点。 反应器还包括处理容器，该处理容器具有多个喷嘴，其角度地设置在主流体流动室的侧壁中，主电解槽内的主流体流动室内的电化学处理期间通常包含在其中的处理流体槽的表面之下。 多个阳极设置在主流体流动室中的不同高度处，以便将它们放置在与正在加工的微电子工件不同的距离处，而在多个阳极和正在处理的微电子工件之间没有中间扩散器。 多个阳极中的一个或多个可以紧邻正在处理的工件。 此外，多个阳极中的一个或多个可以是虚拟阳极。 本发明还涉及主流体流动室内的多级阳极配置及其使用方法。

公开(公告)号：WO0015877A3

公开(公告)日：2000-08-17

申请号：PCT/EP9906800

申请日：1999-09-14

Applicant: LUK FAHRZEUG HYDRAULIK ,  LAUSSER CHRISTOF ,  LAUTH HANS JUERGEN

Inventor： LAUSSER CHRISTOF ,  LAUTH HANS-JUERGEN

IPC: C25D11/00 ,  C25D5/08 ,  C25D11/04

CPC classification number: C25D11/04 ,  C25D5/08 ,  C25D11/005

Abstract: The invention relates to a method for producing wear resisting coated surfaces. The inventive method uses at least two electrodes which are connected to a voltage source and which are introduced into or abut against a reaction chamber. An electrolyte flows through said reaction chamber and the surface to be coated is located therein. The method is characterized in that the direction of flow of the electrolyte is reversed at least once during the coating process.

Abstract translation: 它是用于制造耐磨，涂覆表面的方法，已经提出了包括至少两个连接到电压源的电极，放置在一个由在位于涂布表面上，分别邻近于这些电解质反应空间穿过。 该方法的特征在于，所述电解质的流的方向是在涂覆过程中至少一次反转。

公开(公告)号：WO00000673A1

公开(公告)日：2000-01-06

申请号：PCT/NL1999/000400

申请日：1999-06-29

IPC: C25D1/08 ,  C25D5/08 ,  C25D5/18 ,  C25D7/00

CPC classification number: C25D1/08 ,  C25D5/18

Abstract: Method for producing a nickel foam having a specific rate of between 200 and 400 g/m , at least comprising the steps of: providing a base foam having a conductive surface; nickel being electroplated in an electroplating bath, successively in a preplating zone and a main plating zone, said bath having a conductivity of at least 200 mS/cm at 20 DEG C, the foam being plated with 0.5-19 g/m of nickel in the preplating zone, nickel being plated in the desired amount in the main plating zone, while the flow direction of the electrolyte is reversed in the main plating zone at a frequency of between 1 mHz and 0.1 Hz; and finally removing the base foam.

Abstract translation: 至少包括以下步骤：提供具有导电表面的基底泡沫的步骤：制备具有200-400g / m 3的比率的镍泡沫的方法， 镍在电镀浴中依次在预镀区和主镀层中电镀，所述浴在20℃下的导电率至少为200mS / cm，泡沫镀上0.5-19g / m 2 在镀镍区域中镀镍的镀镍区域以所需的量镀镍，而电镀层的流动方向在主电镀区域以1mHz至0.1Hz的频率反转; 最后除去基础泡沫。