Abstract:
An edge inspection method (Figure 10) for detecting defects on a wafer surface (step 302 in Figure 10) includes acquiring a set of digital images which captures a circumference of the wafer. An edge of the wafer about the circumference is determined. Each digital image is segmented into a plurality of horizontal bands (step 306 in Figure 10). Adjacent edge clusters (step 314 in Figure 10) about the circumference of the wafer are combined into edge pixel bins. The edge pixel bins are analyzed via edge clusters analysis (step 316 in Figure 10) to identify defects. The edge pixel bins are also analyzed via blob analysis (step 318 in Figure 10) to determine defects.
Abstract:
An inspection system is provided for performing high speed inspection. The system includes a data source, one or more computers for processing the data, and a switched fabric for data distribution to the one or more computers.
Abstract:
A system for capturing, calibrating and concatenating all-surface inspection and metrology data is herein disclosed. Uses of such data are also disclosed.
Abstract:
A frame grabber with switched fabric interface where in varying embodiments the fabric interface may be one of InfiniBand, Star Fabric, or PCI Express or the like.
Abstract:
A semiconductor inspection system (100) comprises a first inspection tool (108A) communicatively coupled to a network (104), a second inspection tool (108B) communicatively coupled to the network, and a multi-tool manager (102) communicatively coupled to the network. The multi-tool manager is configured to monitor the first inspection tool and the second inspection tool through the network. The inspection tool (300) includes a robot (304), a first wafer carrier (312) proximate the robot, a first wafer inspection module (320) proximate the robot, a second wafer inspection module (318) proximate the robot, and a controller (308) configured for controlling the robot to pass wafers between the first wafer carrier, the first wafer inspection module, and the second wafer inspection module.
Abstract:
An edge bead removal measurement method includes determining an edge of a wafer about a circumference of the wafer. A location of a wafer notch on the edge of the wafer is determined. A location of a center of the wafer is determined. A distance from the edge of the wafer to an edge bead removal line about the circumference of the wafer is determined.
Abstract:
A confocal three dimensional inspection system (120), and process for use thereof, allows for rapid inspecting of bumps and other three dimensional (3D) features on wafers (S), other semiconductor substrates (S) and other large format micro topographies. The sensor eliminates out of focus light using a confocal principal to create a narrow depth response in the micron range.