公开(公告)号：WO2010080331A2

公开(公告)日：2010-07-15

申请号：PCT/US2009/067594

申请日：2009-12-10

Applicant: LAM RESEARCH CORPOTATION ,  NORKUS, Eugenijus ,  JACIAUSKIENE, Jane ,  DORDI, Yezdi

Inventor： NORKUS, Eugenijus ,  JACIAUSKIENE, Jane ,  DORDI, Yezdi

IPC: H01L21/208 ,  H01L21/28

CPC classification number: C23C18/40 ,  C23C18/48

Abstract: A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Abstract translation: 提供了包含无水铜盐组分，无水钴盐组分，非水络合剂和非水溶剂的非水无电铜电镀溶液。

公开(公告)号：WO2007123677A3

公开(公告)日：2008-11-20

申请号：PCT/US2007007903

申请日：2007-03-27

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

IPC: B23H3/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC classification number: H01L21/32115 ,  C25F7/00

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract translation: 提供接近头和相关联的使用方法用于执行半导体晶片的限制区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：WO2008130519A1

公开(公告)日：2008-10-30

申请号：PCT/US2008/004769

申请日：2008-04-14

Applicant: LAM RESEARCH CORPORATION ,  THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

Inventor： THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

IPC: H01L21/304

CPC classification number: H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract translation: 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：WO2006041629A1

公开(公告)日：2006-04-20

申请号：PCT/US2005/033749

申请日：2005-09-20

Applicant: LAM RESEARCH CORPORATION ,  BOYD, John ,  REDEKER, Fred, C. ,  DORDI, Yezdi

Inventor： BOYD, John ,  REDEKER, Fred, C. ,  DORDI, Yezdi

IPC: B24B51/00

CPC classification number: B24B7/228 ,  B24B37/013 ,  B24B49/12

Abstract: A system for applying a microtopography to a semiconductor wafer (205) is provided. The system includes a chuck (201) configured to hold and rotate the wafer (205). The system also includes a grinding wheel (211) disposed over the chuck (201) in a proximately adjustable manner relative to the wafer (205) to be held by the chuck (201). The grinding wheel (211) is configured to rotate about a central axis of the chuck. The grinding wheel (211) is capable of contacting the wafer (205) and removing material from the wafer (205) at the area of contact. Appropriate application of the grinding wheel (211) to the wafer (205) serves to generate a microtopography across the wafer surface. The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.

Abstract translation: 提供了一种将微图形应用于半导体晶片（205）的系统。 该系统包括配置成保持和旋转晶片（205）的卡盘（201）。 该系统还包括相对于由卡盘（201）保持的晶片（205）以可接近调节的方式设置在卡盘（201）上方的砂轮（211）。 砂轮（211）构造成围绕卡盘的中心轴线旋转。 研磨轮（211）能够在接触区域处接触晶片（205）并从晶片（205）去除材料。 将砂轮（211）适当地应用于晶片（205）用于在晶片表面上产生微观形貌。 然后可以通过常规的化学机械平面化方法更有效地平面化所得到的微观形态。

公开(公告)号：WO2010080331A3

公开(公告)日：2010-09-10

申请号：PCT/US2009067594

申请日：2009-12-10

Applicant: LAM RES CORPOTATION ,  NORKUS EUGENIJUS ,  JACIAUSKIENE JANE ,  DORDI YEZDI

Inventor： NORKUS EUGENIJUS ,  JACIAUSKIENE JANE ,  DORDI YEZDI

IPC: H01L21/208 ,  H01L21/28

CPC classification number: C23C18/40 ,  C23C18/48

Abstract: A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Abstract translation: 提供了包含无水铜盐组分，无水钴盐组分，非水络合剂和非水溶剂的非水性无电镀铜溶液。

公开(公告)号：WO2008085261A1

公开(公告)日：2008-07-17

申请号：PCT/US2007/025469

申请日：2007-12-12

Applicant: LAM RESEARCH CORPORATION ,  BOYD, John ,  DORDI, Yezdi ,  ARUNAGIRI, Tiruchirapalli ,  THIE, William ,  REDEKER, Fritz ,  NALLA, Praveen

Inventor： BOYD, John ,  DORDI, Yezdi ,  ARUNAGIRI, Tiruchirapalli ,  THIE, William ,  REDEKER, Fritz ,  NALLA, Praveen

IPC: C23C18/31 ,  C23C18/18

CPC classification number: C23C18/1689 ,  C23C18/161 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/1683 ,  C23C18/31 ,  H01L21/288 ,  H01L21/76877

Abstract: A self-limiting electroless plating process is provided to plate thin films with improved uniformity. The process comprises dispensing an electroless plating solution onto a substrate to form a quiescent solution layer from which a conformal plated layer plates onto a surface of the substrate by a redox reaction. The redox reaction occurs at the surface of the substrate between a reducing agent ion and a plating ion and produces an oxidized ion. Because the solution is quiescent, a boundary layer forms within the solution layer adjacent to the surface. The boundary layer is characterized by a concentration gradient of the oxidized ion. Diffusion of the reducing agent ion through the boundary layer controls the redox reaction. The quiescent solution layer can be maintained until the reducing agent ion in the solution layer is substantially depleted.

Abstract translation: 提供了一种自限制化学镀工艺，以平整薄膜，以均匀度提高。 该方法包括将化学镀溶液分配到基底上以形成静电溶液层，通过氧化还原反应从其中将共形镀层从该平板镀在基底的表面上。 氧化还原反应发生在还原剂离子和镀覆离子之间的衬底表面，并产生氧化离子。 因为溶液是静止的，所以在与表面相邻的溶液层内形成边界层。 边界层的特征在于氧化离子的浓度梯度。 还原剂离子通过边界层的扩散控制氧化还原反应。 可以维持静止溶液层，直到溶液层中的还原剂离子基本上被耗尽。

公开(公告)号：WO2008076678A1

公开(公告)日：2008-06-26

申请号：PCT/US2007/086896

申请日：2007-12-08

Applicant: LAM RESEARCH CORPORATION ,  REDEKER, Fritz ,  BOYD, John ,  DORDI, Yezdi ,  YOON, Hyungsuk Alexander ,  LI, Shijian

Inventor： REDEKER, Fritz ,  BOYD, John ,  DORDI, Yezdi ,  YOON, Hyungsuk Alexander ,  LI, Shijian

IPC: H01L21/316 ,  C23C16/40

CPC classification number: C25D7/123 ,  C23C18/1653 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C23C28/341 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

Abstract translation: 本发明涉及用于半导体器件金属化的方法和系统。 本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。 在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。 该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。 该方法还包括在ALD铜上沉积间隙填充铜层。 本发明的另一方面是用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。 在一个实施例中，集成系统包括至少一个阻挡层沉积模块。 该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。 该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。 转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

公开(公告)号：WO2008076677A1

公开(公告)日：2008-06-26

申请号：PCT/US2007/086895

申请日：2007-12-08

Applicant: LAM RESEARCH CORPORATION ,  DORDI, Yezdi ,  BOYD, John ,  REDEKER, Fritz ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  YOON, Hyungsuk Alexander

Inventor： DORDI, Yezdi ,  BOYD, John ,  REDEKER, Fritz ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  YOON, Hyungsuk Alexander

IPC: H01L21/28

CPC classification number: C23C8/02 ,  C23C8/80 ,  C23C10/02 ,  C23C10/60 ,  C23C16/54 ,  C23C16/56 ,  C23C18/1601 ,  C23C18/1632 ,  C23C18/54 ,  C23C26/00 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873

Abstract: This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

Abstract translation: 本发明涉及用于制造半导体器件的方法和系统。 本发明的一个方面是在用于半导体器件金属化的阻挡层上沉积间隙填充铜层的方法。 在一个实施例中，该方法包括在衬底的表面上形成阻挡层，并使阻挡层经受处理条件，以便在阻挡层上形成可移除的钝化表面。 该方法还包括从阻挡层去除钝化表面并将间隙填充铜层沉积到阻挡层上。 本发明的另一方面是用于在用于半导体器件金属化的阻挡层上沉积铜层的集成系统。 在一个实施例中，集成系统包括被配置用于阻挡层沉积和钝化表面形成的至少一个工艺模块和被配置用于钝化表面去除和沉积到阻挡层上的至少一个其它工艺模块。 所述系统还包括至少一个传送模块，所述至少一个传送模块被耦合，使得所述衬底可以在所述模块之间基本上不被暴露于形成氧化物的环境

公开(公告)号：WO2008027216A3

公开(公告)日：2008-03-06

申请号：PCT/US2007/018270

申请日：2007-08-17

Applicant: LAM RESEARCH CORPORATION ,  DORDI, Yezdi ,  REDEKER, Fritz, C. ,  BOYD, John ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  HOWALD, Arthur, M. ,  YOON, Hyungsuk, Alexander ,  VERTOMMEN, Johan

Inventor： DORDI, Yezdi ,  REDEKER, Fritz, C. ,  BOYD, John ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  HOWALD, Arthur, M. ,  YOON, Hyungsuk, Alexander ,  VERTOMMEN, Johan

IPC: C23C16/00

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：WO2007123677A2

公开(公告)日：2007-11-01

申请号：PCT/US2007/007903

申请日：2007-03-27

Applicant: LAM RESEARCH CORPORATION ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  RAVKIN, Michael ,  DE LARIOS, John

Inventor： BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  RAVKIN, Michael ,  DE LARIOS, John

IPC: H01L21/461 ,  H01L21/306

CPC classification number: H01L21/32115 ,  C25F7/00

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract translation: 提供接近头和相关联的使用方法用于执行半导体晶片的限制区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 定义流体供应通道以在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。