公开(公告)号：WO2008057749A1

公开(公告)日：2008-05-15

申请号：PCT/US2007/082131

申请日：2007-10-22

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-Erik

Inventor： ELERS, Kai-Erik

IPC: C23C16/32 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542

Abstract: Methods of forming metal carbide thin films are provided. According to preferred embodiments, metal carbide thin films are formed in an atomic layer deposition (ALD) process by alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a metal source chemical, a reducing agent and a carbon source chemical. The reducing agent is preferably selected from the group consisting of excited species of hydrogen and silicon-containing compounds.

Abstract translation: 提供了形成金属碳化物薄膜的方法。 根据优选实施例，通过交替地和顺序地将反应空间中的衬底与金属源化学品，还原剂和还原剂的空间和时间分离的气相脉冲交替地和顺序地接触，在原子层沉积（ALD）工艺中形成金属碳化物薄膜 碳源化学品。 还原剂优选选自氢和含硅化合物的激发物质。

公开(公告)号：WO2003025243A2

公开(公告)日：2003-03-27

申请号：PCT/US2002/029032

申请日：2002-09-10

Applicant: ASM AMERICA, INC. ,  ASM MICROCHEMISTRY OY ,  ELERS, Kai Erik ,  LI, Wei-Min

Inventor： ELERS, Kai Erik ,  LI, Wei-Min

IPC: C23C

CPC classification number: C23C16/45534 ,  C23C16/34 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24331 ,  H01L2924/00

Abstract: The present methods provide tools for growing conformal metal thin films (150), including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

Abstract translation: 本方法提供用于生长适形金属薄膜（150）的工具，包括金属氮化物，金属碳化物和金属氮化碳薄膜。 特别地，提供了用于从侵蚀性化学品生长这样的膜的方法。 过渡金属，过渡金属碳化物，过渡金属氮化物和过渡金属氮化碳薄膜在各种表面如金属和氧化物的沉积过程中，诸如卤化氢等腐蚀性化合物的量减少。 吸气剂保护对卤化氢和卤化铵敏感的表面，如铝，铜，氧化硅和沉积层，以防腐蚀。 还公开了包含金属薄膜的纳米层压结构及其形成方法。

公开(公告)号：WO2008055017A2

公开(公告)日：2008-05-08

申请号：PCT/US2007/081991

申请日：2007-10-19

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-erik

Inventor： ELERS, Kai-erik

CPC classification number: C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517

Abstract: Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the film. In some embodiments, plasma parameters are selected to achieve metal-rich metallic-compound films. The metallic-compound films can be components of gate stacks, such as gate electrodes. Plasma parameters can be selected to achieve a gate stack with a predetermined work function.

Abstract translation: 通过等离子体增强的原子层沉积（PEALD）形成金属化合物膜。 根据优选的方法，通过选择等离子体参数来调节膜中的金属（或多种金属）的氧化态来控制膜或薄膜组合物。 在一些实施例中，选择等离子体参数以获得富含金属的金属化合物膜。 金属化合物膜可以是栅极堆叠的组件，诸如栅极电极。 可以选择等离子体参数来实现具有预定功函数的栅极堆叠。

公开(公告)号：WO2008055017A3

公开(公告)日：2008-07-31

申请号：PCT/US2007081991

申请日：2007-10-19

Applicant: ASM INC ,  ELERS KAI-ERIK

Inventor： ELERS KAI-ERIK

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517

Abstract: Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the film. In some embodiments, plasma parameters are selected to achieve metal-rich metallic-compound films. The metallic-compound films can be components of gate stacks, such as gate electrodes. Plasma parameters can be selected to achieve a gate stack with a predetermined work function.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）形成金属化合物膜。 根据优选的方法，通过选择等离子体参数来调节膜中金属（或多种金属）的氧化态来控制膜或薄膜组合物。 在一些实施例中，选择等离子体参数以实现富金属的金属化合物膜。 金属化合物膜可以是栅极堆叠的组分，例如栅电极。 可以选择等离子体参数以实现具有预定功函数的栅极堆叠。

公开(公告)号：WO2008051851A1

公开(公告)日：2008-05-02

申请号：PCT/US2007/081960

申请日：2007-10-19

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

Inventor： ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

IPC: C23C16/08 ,  C23C16/32 ,  C23C16/50 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/515

Abstract: Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. The substrate is further exposed to a reducing agent 103. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.

Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物102的气相脉冲和一种或多种等离子体激发的 在其它实施方案中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括同时使反应空间中的底物与金属化合物102和一种或多种等离子体激发的物质 的底物进一步暴露于还原剂103.还原剂除去杂质，包括卤原子和/或氧原子。

公开(公告)号：WO2003025243A3

公开(公告)日：2003-03-27

申请号：PCT/US2002/029032

申请日：2002-09-10

Applicant: ASM AMERICA, INC. ,  ASM MICROCHEMISTRY OY ,  ELERS, Kai Erik ,  LI, Wei-Min

Inventor： ELERS, Kai Erik ,  LI, Wei-Min

IPC: C23C16/455

Abstract: The present methods provide tools for growing conformal metal thin films (150), including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.