公开(公告)号：WO2006071326A1

公开(公告)日：2006-07-06

申请号：PCT/US2005/036226

申请日：2005-10-07

Applicant: CREE, INC. ,  CARTER, Calvin, H., Jr. ,  JENNY, Jason, Ronald ,  MALTA, David, Philip ,  HOBGOOD, Hudson, McDonald ,  TSVETKOV, Valeri, F. ,  DAS, Mrinal, K.

Inventor： CARTER, Calvin, H., Jr. ,  JENNY, Jason, Ronald ,  MALTA, David, Philip ,  HOBGOOD, Hudson, McDonald ,  TSVETKOV, Valeri, F. ,  DAS, Mrinal, K.

IPC: C30B29/36 ,  C30B33/02

CPC classification number: C30B29/36 ,  C30B33/02

Abstract: A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Abstract translation: 描述了一种制备具有增加的少数载流子寿命的碳化硅晶体的方法。 该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

公开(公告)号：WO1997028297A1

公开(公告)日：1997-08-07

申请号：PCT/US1997001292

申请日：1997-01-24

Applicant: CREE RESEARCH, INC. ,  CARTER, Calvin, H. ,  TSVETKOV, Valeri, F. ,  GLASS, Robert, C.

Inventor： CREE RESEARCH, INC.

IPC: C30B23/00

CPC classification number: C30B23/00 ,  C30B29/36

Abstract: Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.

Abstract translation: 大型单晶碳化硅在炉升华系统中生长。 晶体以补偿水平的p型和n型掺杂剂（即，大致相等的两种掺杂剂）生长，以便产生基本上无色的晶体。 水晶可以被切割成具有非凡的韧性和硬度的合成宝石，以及达到或超过钻石的辉煌。

公开(公告)号：WO2005012601A3

公开(公告)日：2005-03-24

申请号：PCT/US2004023859

申请日：2004-07-26

Applicant: CREE INC ,  FECHKO GEORGE JOHN JR ,  JENNY JASON RONALD ,  HOBGOOD HUDSON MCDONALD ,  TSVETKOV VALERI F ,  CARTER CARTER H JR

Inventor： FECHKO GEORGE JOHN JR ,  JENNY JASON RONALD ,  HOBGOOD HUDSON MCDONALD ,  TSVETKOV VALERI F ,  CARTER CARTER H JR

IPC: C30B23/00 ,  C30B29/36

CPC classification number: C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

Abstract: The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing all ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Abstract translation: 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢气的所有环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。

公开(公告)号：WO2004102686A1

公开(公告)日：2004-11-25

申请号：PCT/US2004/014023

申请日：2004-05-06

Applicant: CREE, INC. ,  WU, Yifeng ,  NEGLEY, Gerald, H. ,  SLATER, JR., David, B. ,  TSVETKOV, Valeri, F. ,  SUVOROV, Alexander

Inventor： WU, Yifeng ,  NEGLEY, Gerald, H. ,  SLATER, JR., David, B. ,  TSVETKOV, Valeri, F. ,  SUVOROV, Alexander

IPC: H01L33/00

CPC classification number: H01L33/145 ,  H01L24/73 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02P80/30 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

Abstract translation: 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入掩模。

公开(公告)号：WO2002097173A2

公开(公告)日：2002-12-05

申请号：PCT/US2002/016274

申请日：2002-05-23

Applicant: CREE, INC. ,  CARTER, Calvin, H., Jr. ,  BRADY, Mark ,  TSVETKOV, Valeri, F. ,  MUELLER, Stephan ,  HOBGOOD, Hudson, M.

Inventor： CARTER, Calvin, H., Jr. ,  BRADY, Mark ,  TSVETKOV, Valeri, F. ,  MUELLER, Stephan ,  HOBGOOD, Hudson, M.

IPC: C30B

CPC classification number: H01L29/1608 ,  C30B23/00 ,  C30B29/36 ,  C30B33/00 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

Abstract: A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Ω-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

Abstract translation: 公开了一种半绝缘的单体碳化硅，其在室温下具有至少5000Ω-cm的电阻率，并且捕获元素的浓度从产生低于量的价带或导带至少700meV 这将影响晶体的电阻率，优选低于可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。

公开(公告)号：WO2006041659A2

公开(公告)日：2006-04-20

申请号：PCT/US2005/034351

申请日：2005-09-27

Applicant: CREE, INC. ,  POWELL, Adrian ,  BRADY, Mark ,  MUELLER, Stephan, G. ,  TSVETKOV, Valeri, F. ,  LEONARD, Robert, Tyler

Inventor： POWELL, Adrian ,  BRADY, Mark ,  MUELLER, Stephan, G. ,  TSVETKOV, Valeri, F. ,  LEONARD, Robert, Tyler

IPC: C30B23/00

CPC classification number: C30B23/00 ,  C30B29/36 ,  Y10T428/21

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm -2 .

Abstract translation: 公开了具有至少约3英寸的直径和小于约2000cm -2的1c螺旋位错密度的高质量的SiC单晶晶片。

公开(公告)号：WO2004092457A1

公开(公告)日：2004-10-28

申请号：PCT/US2004/010515

申请日：2004-04-06

Applicant: CREE, INC. ,  TSVETKOV, Valeri, F. ,  HOBGOOD, Hudson, McDonald ,  CARTER, Carter, H., Jr. ,  JENNY, Jason, Ronald

Inventor： TSVETKOV, Valeri, F. ,  HOBGOOD, Hudson, McDonald ,  CARTER, Carter, H., Jr. ,  JENNY, Jason, Ronald

IPC: C30B29/36

CPC classification number: H01L21/0445 ,  C30B29/36 ,  C30B31/00 ,  C30B31/20 ,  H01L21/263 ,  Y10S438/931

Abstract: A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of 31 P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.

Abstract translation: 公开了用于在用于半导体应用的单晶碳化硅中产生高度均匀的半绝缘特性的方法。 该方法包括用具有净p型掺杂和深层级的中子照射碳化硅单晶，直到等于或超过原始净p型掺杂的浓度等于或等于原始净p型掺杂，同时保持等于或小于浓度之和 的深层次和原来的净p型掺杂。

公开(公告)号：WO02097173A3

公开(公告)日：2003-04-17

申请号：PCT/US0216274

申请日：2002-05-23

Applicant: CREE INC ,  CARTER CALVIN H JR ,  BRADY MARK ,  TSVETKOV VALERI F ,  MUELLER STEPHAN ,  HOBGOOD HUDSON M

Inventor： CARTER CALVIN H JR ,  BRADY MARK ,  TSVETKOV VALERI F ,  MUELLER STEPHAN ,  HOBGOOD HUDSON M

IPC: C30B29/36 ,  C30B23/00 ,  C30B33/00 ,  H01L21/338 ,  H01L29/161 ,  H01L29/24 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

CPC classification number: H01L29/1608 ,  C30B23/00 ,  C30B29/36 ,  C30B33/00 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

Abstract: A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Omega-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

Abstract translation: 公开了一种半绝缘的碳化硅单体，其在室温下的电阻率至少为5000Ω·cm，并且捕获元素的浓度从产生或低于量级的化合价或导带产生至少700meV 这将影响晶体的电阻率，优选低于可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。

公开(公告)号：WO2006135476A1

公开(公告)日：2006-12-21

申请号：PCT/US2006/012929

申请日：2006-04-05

Applicant: CREE, INC. ,  POWELL, Adrian ,  BRADY, Mark ,  TSVETKOV, Valeri, F.

Inventor： POWELL, Adrian ,  BRADY, Mark ,  TSVETKOV, Valeri, F.

IPC: C30B29/36 ,  H01L21/18

CPC classification number: C30B33/00 ,  C30B23/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0254 ,  H01L29/66068

Abstract: A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm 2 ) of surface area that has a basal plane dislocation volume density of less than about 500 cm -2 for a 4 degree off-axis wafer.

Abstract translation: 公开了一种高质量的SiC晶圆。 该晶片具有至少约3英寸（75mm）的直径和至少一个具有小于约500的基面位错体积密度的表面积的连续平方英寸（6.25cm 2/2） 用于4度离轴晶片的cm -2。

公开(公告)号：WO2006041659A3

公开(公告)日：2006-06-08

申请号：PCT/US2005034351

申请日：2005-09-27

Applicant: CREE INC ,  POWELL ADRIAN ,  BRADY MARK ,  MUELLER STEPHAN G ,  TSVETKOV VALERI F ,  LEONARD ROBERT TYLER

Inventor： POWELL ADRIAN ,  BRADY MARK ,  MUELLER STEPHAN G ,  TSVETKOV VALERI F ,  LEONARD ROBERT TYLER

IPC: C30B23/00

CPC classification number: C30B23/00 ,  C30B29/36 ,  Y10T428/21

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm -2 .

Abstract translation: 公开了具有至少约3英寸的直径和小于约2000cm -2的1c螺旋位错密度的高质量的SiC单晶晶片。