公开(公告)号：WO2012004710A2

公开(公告)日：2012-01-12

申请号：PCT/IB2011/052895

申请日：2011-06-30

Applicant: LAM RESEARCH CORPORATION ,  LAM RESEARCH AG ,  KOLICS, Artur ,  LEE, Willliam, T. ,  REDEKER, Fritz

Inventor： KOLICS, Artur ,  LEE, Willliam, T. ,  REDEKER, Fritz

IPC: H01L21/60

CPC classification number: H01L24/04 ,  H01L21/76849 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05099 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited on the barrier metal, and the wetting layer is wettable by solder.

Abstract translation: 一种制造电子器件的方法，其在一个实施例中包括提供衬底，至少在衬底的一部分上无电沉积阻挡金属，并且使用湿化学如无电镀沉积将具有焊料润湿性的基本上无金的润湿层沉积到 屏障金属。 在一个实施例中的电子设备包括金属化堆叠。 金属化堆叠包括无电沉积的阻挡金属和沉积在阻挡金属上的基本无金的润湿层，并且润湿层可被焊料润湿。

公开(公告)号：WO2012004710A3

公开(公告)日：2012-05-18

申请号：PCT/IB2011052895

申请日：2011-06-30

Applicant: LAM RES CORP ,  LAM RES AG ,  KOLICS ARTUR ,  LEE WILLLIAM T ,  REDEKER FRITZ

Inventor： KOLICS ARTUR ,  LEE WILLLIAM T ,  REDEKER FRITZ

IPC: H01L21/60

CPC classification number: H01L24/04 ,  H01L21/76849 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05099 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited on the barrier metal, and the wetting layer is wettable by solder.

Abstract translation: 一种制造电子器件的方法，在一个实施例中，该方法包括提供衬底，在衬底的至少一部分上无电沉积阻挡金属，并且使用湿化学如无电沉积将基本不含金的浸润层浸润到 屏障金属。 在一个实施例中包括金属化叠层的电子器件。 金属化叠层包括无电沉积的阻挡金属和沉积在阻挡金属上的基本上无金的润湿层，并且润湿层可通过焊料润湿。