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    PLANAR LINEAR INDUCTIVE POSITION SENSOR HAVING EDGE EFFECT COMPENSATION
    1.
    发明申请
    PLANAR LINEAR INDUCTIVE POSITION SENSOR HAVING EDGE EFFECT COMPENSATION 审中-公开

    公开(公告)号：WO2020171840A1

    公开(公告)日：2020-08-27

    申请号：PCT/US2019/044245

    申请日：2019-07-30

    Applicant: MICROSEMI CORPORATION

    Inventor： SHAGA, Ganesh ,  NAUDURI, Bala Sundaram ,  PUTTAPUDI, Sudheer

    IPC: G01D5/20

    Abstract: A planar linear inductive position sensor includes at least one oscillating coil, a first sensing coil having opposing edges extending beyond opposing edges of the oscillating coil along a linear axis along which a linear position of a conductive object is to be sensed, and a second sensing coil having opposing edges extending beyond opposing edges of the oscillating coil along the linear axis. The first and second sensing coils have geometries selected such that equal opposing magnetic fields are induced in the first and second sensing coils in the presence of a magnetic field generated by the oscillating coil when no conductive target is proximate and unequal opposing magnetic fields are induced in the first and second sensing coils when the conductive target is proximate, a difference in the unequal opposing magnetic fields induced in the first and second sensing coils correlated to the position of the conductive target.

    METHOD AND ASSEMBLY FOR OHMIC CONTACT IN THINNED SILICON CARBIDE DEVICES
    2.
    发明申请
    METHOD AND ASSEMBLY FOR OHMIC CONTACT IN THINNED SILICON CARBIDE DEVICES 审中-公开

    公开(公告)号：WO2019103893A1

    公开(公告)日：2019-05-31

    申请号：PCT/US2018/060999

    申请日：2018-11-14

    Applicant: MICROSEMI CORPORATION

    Inventor： ODEKIRK, Bruce ,  SOTO, Jacob, Alexander

    IPC: H01L21/28 ,  H01L29/45 ,  H01L29/16 ,  H01L21/304 ,  H01L21/268

    Abstract: A silicon carbide semiconductor assembly and a method of forming a silicon carbide (SiC) semiconductor assembly are provided. The silicon carbide semiconductor assembly includes a semiconductor substrate and an electrode. The semiconductor substrate is formed of silicon carbide and includes a first surface, a second surface opposing the first surface, and a thickness extending therebetween. The method includes forming one or more electronic devices on the first surface and thinning the semiconductor substrate by removing the second surface to a predetermined depth of semiconductor substrate and leaving a third surface opposing the first surface. The method further includes forming a non-ohmic alloy layer on the third surface at a first temperature range and annealing the alloy layer at a second temperature range forming an ohmic layer, the second temperature range being greater than the first temperature range.

    SOLID-STATE PHOTODETECTOR WITH VARIABLE SPECTRAL RESPONSE
    5.
    发明申请
    SOLID-STATE PHOTODETECTOR WITH VARIABLE SPECTRAL RESPONSE 审中-公开
    具有可变光谱响应的固态光电转换器

    公开(公告)号：WO2014014987A1

    公开(公告)日：2014-01-23

    申请号：PCT/US2013/050810

    申请日：2013-07-17

    Applicant: MICROSEMI CORPORATION

    Inventor： MCNUTT, Michael, J.

    IPC: G01J3/00 ,  G01J3/02

    CPC classification number: G01J3/50 ,  G01N21/55 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14647 ,  H01L31/02019 ,  H01L31/103

    Abstract: A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.

    Abstract translation: 具有可变光谱响应的固态光电探测器，可产生入射光的窄或宽响应谱。 一些实施例包括固态器件结构，其包括共享公共阳极区域的第一光电二极管和第二光电二极管。 施加到第一光电二极管和/或第二光电二极管的偏压可用于控制光电二极管和/或公共阳极区域的耗尽区的厚度，以改变光电检测器的光谱响应。 可以基于公共阳极区域的多个触点和/或耗尽区域的电容之间的电阻来控制耗尽区域和/或公共阳极区域的厚度。 实施例包括使用可变光谱响应光电检测器来确定入射光的光谱特性的控制电路和方法。

    SAMPLING EXTERNAL VOLTAGE WHICH MAY EXCEED INTEGRATED CIRCUIT MAXIMUM VOLTAGE RATING
    6.
    发明申请
    SAMPLING EXTERNAL VOLTAGE WHICH MAY EXCEED INTEGRATED CIRCUIT MAXIMUM VOLTAGE RATING 审中-公开
    可以超过集成电路的最大电压额定值的采样外部电压

    公开(公告)号：WO2011127227A1

    公开(公告)日：2011-10-13

    申请号：PCT/US2011/031489

    申请日：2011-04-07

    Applicant: MICROSEMI CORPORATION ,  PEKER, Arkadiy ,  KORCHARZ, Dror ,  OKADA, Paul

    Inventor： PEKER, Arkadiy ,  KORCHARZ, Dror ,  OKADA, Paul

    IPC: H05B33/08

    CPC classification number: H05B33/0818 ,  Y02B20/347

    Abstract: An LED driver arrangement wherein a low voltage IC is arranged to sample the voltage at a terminal of each of the respective electronically controlled switches controlling a plurality of LED strings each receiving power from a single source, with the single source providing voltage in excess of the voltage rating of the IC. For each electronically controlled switch a controllable current source and an isolating unidirectional electronic valve is provided, the respective current source being enabled only when the respective associated electronically controlled switch is at least partially closed thereby ensuring that the respective isolating unidirectional electronic valve associated with the respective illuminating LED string conducts, and the voltage at the terminal of the respective electronically controlled switch is thus seen by the IC when the associated LED string is producing illumination, the voltage then being lower than the maximum voltage rating of the IC.

    Abstract translation: 一种LED驱动器装置，其中低电压IC被布置成对各个电子控制开关的端子处的电压进行采样，每个电子控制开关控制从单个源接收功率的多个LED串，其中单个源提供超过 IC的额定电压。 对于每个电子控制开关，提供了可控电流源和隔离单向电子阀，仅当相应的相关联的电子控制开关至少部分闭合时才允许相应的电流源，从而确保与相应的电子控制开关相关联的相应的隔离单向电子阀 照明LED串导通，并且当相关联的LED串产生照明时，IC看到各个电子控制开关的端子处的电压，然后电压低于IC的最大额定电压。

    LOW VOLTAGE DROP CLOSED LOOP UNIDIRECTIONAL ELECTRONIC VALVE
    7.
    发明申请
    LOW VOLTAGE DROP CLOSED LOOP UNIDIRECTIONAL ELECTRONIC VALVE 审中-公开
    低电压关闭环路单向电子阀

    公开(公告)号：WO2011005424A1

    公开(公告)日：2011-01-13

    申请号：PCT/US2010/038583

    申请日：2010-06-15

    Applicant: MICROSEMI CORPORATION ,  FAHRENBRUCH, Shawn Anthony ,  LIU, George

    Inventor： FAHRENBRUCH, Shawn Anthony ,  LIU, George

    IPC: H01L31/02 ,  H02J7/35 ,  H03K17/06

    CPC classification number: H03K17/063 ,  H01L31/02021 ,  H02J7/35 ,  Y02E10/50 ,  Y10T307/858

    Abstract: A low voltage drop unidirectional electronic valve constituted of: a first terminal; a second terminal; a first electronically controlled switch coupled between the first terminal and the second terminal; and a first charge pump arranged to close the first electronically controlled switch when the voltage potential at the first terminal is greater than the voltage potential at the second terminal by a first value. The first charge pump is arranged in a closed loop with the first electronically controlled switch so as to continuously maintain the voltage potential at the first terminal greater than the voltage potential at the second terminal by the first value.

    Abstract translation: 一种低压降单向电子阀，包括：第一端子; 第二个终端; 耦合在第一端子和第二端子之间的第一电子控制开关; 以及第一电荷泵，其布置成当第一端子处的电压电位大于第二端子处的电压电位时第一电子控制开关闭合第一值。 第一电荷泵与第一电子控制开关以闭环布置，以便将第一端子处的电压电位连续地保持大于第二端子处的电压电位第一值。

    EDGE TERMINATION HIGH VOLTAGE SEMICONDUCTOR DEVICE
    8.
    发明申请
    EDGE TERMINATION HIGH VOLTAGE SEMICONDUCTOR DEVICE 审中-公开
    边缘终端高压半导体器件

    公开(公告)号：WO2009039014A1

    公开(公告)日：2009-03-26

    申请号：PCT/US2008/075891

    申请日：2008-09-10

    Applicant: MICROSEMI CORPORATION ,  TSANG, Dah, Wen ,  SDRULLA, Dumitru ,  ZHANG, Jinshu

    Inventor： TSANG, Dah, Wen ,  SDRULLA, Dumitru ,  ZHANG, Jinshu

    IPC: H01L29/00

    CPC classification number: H01L29/66712 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/7811

    Abstract: High voltage semiconductor devices with high-voltage termination structures (100, 200, 300) are constructed on lightly doped substrates (12). Lightly doped p-type substrates (12) are particularly prone to depletion and inversion from positive charges, degrading the ability of associated termination structures to block high voltages. To improve the efficiency and stability of termination structures, second termination regions (23, 223, 323) of the same dopant type as the substrate (12), more heavily doped than the substrate (12) but more lightly doped than first termination regions (22), are positioned adjoining the first termination regions (22). The second termination regions raise the field threshold voltage where the surface is vulnerable and render the termination structure (110) substantially insensitive to positive charges at the surface. The use of higher dopant concentration in the gap region without causing premature avalanche is facilitated by only creating second termination regions (323) for regions lacking field plate (10) protection.

    Abstract translation: 具有高电压端接结构（100,200,300）的高电压半导体器件构造在轻掺杂衬底（12）上。 轻掺杂的p型衬底（12）特别容易从正电荷中消耗和反转，降低了相关终端结构阻挡高电压的能力。 为了提高端接结构的效率和稳定性，与衬底（12）相同的掺杂剂类型的第二端接区域（23,223,323）比衬底（12）掺杂更多，但比第一端接区域更轻掺杂 22）定位成邻接第一端接区域（22）。 第二终端区域提高场表面易受伤害的场阈值电压，并使端接结构（110）对表面的正电荷基本不敏感。 通过仅为缺少场板（10）保护的区域创建第二终止区域（323），便于在间隙区域中使用更高的掺杂剂浓度而不引起过早的雪崩。

    SERIAL DATA INTERFACE WITH REDUCED POWER CONSUMPTION
    9.
    发明申请
    SERIAL DATA INTERFACE WITH REDUCED POWER CONSUMPTION 审中-公开

    公开(公告)号：WO2003023970A3

    公开(公告)日：2003-03-20

    申请号：PCT/US2002/028901

    申请日：2002-09-09

    Applicant: MICROSEMI CORPORATION

    Inventor： STEENSGAARD-MADSEN, Jesper ,  CHATTERJEE, Shouri ,  LAGERVALL, Per, Arne

    IPC: H03M3/04

    Abstract: A method of encoding a first stream of digital signal data words d(k) is provided. A most recent value of the first stream of digital signal data words is received and memorized. A previous value of the first stream of digital data words is received and memorized. The most recent and the previous values of the stream of digital data words are combined to create a second data stream (76). An embodiment for a hearing aid shows the usage of the method to encode output data from a delta sigma analog/digital converter avoiding frequent transitions in the transmitted data and thus lowering the pulse repetition frequency.

    APPARATUS AND METHODS FOR GENERATING AN ELECTRONIC SIGNAL RESPONSIVE TO SELECT LIGHT
    10.
    发明申请
    APPARATUS AND METHODS FOR GENERATING AN ELECTRONIC SIGNAL RESPONSIVE TO SELECT LIGHT 审中-公开
    用于产生响应于选择光的电子信号的装置和方法

    公开(公告)号：WO2002090907A2

    公开(公告)日：2002-11-14

    申请号：PCT/US2002/013853

    申请日：2002-05-03

    Applicant: MICROSEMI CORPORATION

    Inventor： COMEAU, Alain, Richard

    IPC: G01J3/00

    CPC classification number: G01J1/44 ,  G01J1/4228 ,  G01J5/60

    Abstract: Disclosed are apparatus and methods for generating an electronic signal responsive to selected wavelengths of the optical spectrum. An optical thickness differential between two or more photoconductors is used to generate an electronic signal calibrated to be representative of light signals of a selected range of wavelengths.

    Abstract translation: 公开了响应于光谱的选定波长产生电子信号的装置和方法。 使用两个或多个光电导体之间的光学厚度差异来产生经校准以代表所选波长范围的光信号的电子信号。

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