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    ULTRA-HIGH SPEED ANISOTROPIC REACTIVE ION ETCHING
    2.
    发明申请
    ULTRA-HIGH SPEED ANISOTROPIC REACTIVE ION ETCHING 审中-公开
    超高速异相反应离子蚀刻

    公开(公告)号：WO2014092856A1

    公开(公告)日：2014-06-19

    申请号：PCT/US2013/064807

    申请日：2013-10-14

    Applicant: THE PENN STATE RESEARCH FOUNDATION

    Inventor： TADIGADAPA, Srinivas ,  HATIPOGLU, Gokhan

    IPC: C23C14/46 ,  C23C14/02

    CPC classification number: H01J37/32357 ,  B81C99/0025 ,  C03C15/00 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/3341 ,  H01J2237/3345 ,  H01L21/3065 ,  H01L21/31116

    Abstract: A system and method for reactive ion etching (RIE) system of a material is provided. The system includes a plasma chamber comprising a plasma source and a gas inlet, a diffusion chamber comprising a substrate holder for supporting a substrate with a surface comprising the material and a gas diffuser, and a source of a processing gas coupled to the gas diffuser. In the system and method, at least one radical of the processing gas is reactive with the material to perform etching of the material, the gas diffuser is configured to introduce the processing gas into the processing region, and the substrate holder comprises an electrode that can be selectively biased to draw ions generated by the plasma source into the processing region to interact with the at least one processing gas to generate the at least one radical at the surface.

    Abstract translation: 提供了一种材料的反应离子蚀刻（RIE）系统和方法。 该系统包括包括等离子体源和气体入口的等离子体室，扩散室，其包括用于支撑具有包括该材料的表面的基板的基板保持器和气体扩散器，以及耦合到气体扩散器的处理气体源。 在系统和方法中，处理气体的至少一个基团与材料反应以进行材料的蚀刻，气体扩散器被配置为将处理气体引入处理区域，并且衬底保持器包括可以 被选择性地偏置以将由等离子体源产生的离子吸引到处理区域中以与至少一个处理气体相互作用以在表面处产生至少一个自由基。

    基板処理装置及び半導体装置の製造方法
    4.
    发明申请
    基板処理装置及び半導体装置の製造方法 审中-公开
    基板处理装置及制造半导体器件的方法

    公开(公告)号：WO2015011829A1

    公开(公告)日：2015-01-29

    申请号：PCT/JP2013/070342

    申请日：2013-07-26

    Applicant: 株式会社日立国際電気

    Inventor： 坪田　康寿 ,  和田　優一 ,  亀田　賢治 ,  檜山　真

    IPC: H01L21/3065 ,  H01L21/677

    CPC classification number: H01L21/32135 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/334 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L27/10852

    Abstract: 【課題】基板面内において、高い選択性を有するエッチングを実現する。 【解決手段】　上記課題を解決するために、少なくともシリコンを含有する第一の膜と、前記第一の膜よりもシリコン含有率が少ない第二の膜とが形成された基板が載置される載置部と、前記載置部が設けられた処理容器と、前記基板へエッチングガスを供給するガス供給系と、前記エッチングガスを前記基板と接触する間、前記第二の膜のエッチング速度よりも前記第一の膜のエッチング速度が高くなるよう前記基板の温度を制御する温度制御部と、　前記処理容器内の雰囲気を排気する排気系と、を有する基板処理装置を提供する。

    Abstract translation: [问题]实现在基板表面具有高选择性的蚀刻。 [解决方案]为了解决上述问题，提供了一种基板处理装置，该基板处理装置具有：放置部，其将形成有至少含有硅的第一膜和具有较低硅含量的第二膜的基板 比第一部电影; 设置有所述放置部的处理容器; 用于向基板供给蚀刻气体的气体供给系统; 温度控制器，用于控制基板的温度，使得蚀刻第一膜的速度高于蚀刻气体与基板接触时蚀刻第二膜的速度; 以及用于排出处理容器中的气氛的排气系统。

    APPARATUS AND METHOD FOR PULSED PLASMA PROCESSING OF A SEMICONDUCTOR SUBSTRATE
    6.
    发明申请
    APPARATUS AND METHOD FOR PULSED PLASMA PROCESSING OF A SEMICONDUCTOR SUBSTRATE 审中-公开
    溅射等离子体处理半导体基板的装置和方法

    公开(公告)号：WO1997014177A1

    公开(公告)日：1997-04-17

    申请号：PCT/US1996016138

    申请日：1996-10-09

    Applicant: MATTSON TECHNOLOGY, INC.

    Inventor： MATTSON TECHNOLOGY, INC. ,  SAVAS, Stephen, E.

    IPC: H01L21/00

    CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/004 ,  H01J2237/3345

    Abstract: Apparatus (100) for an improved etch process. A power source (1500, 1506) alternates between high and low power cycles to produce and sustain a plasma discharge. The high power cycles couple sufficient power into the plasma to produce a high density of ions (>/=10 cm ) for etching. The low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. The low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls (116a, 116b) or due to recombination of negative and positive ions. A separate power (152) source alternates between high and low power cycles to accelerate ions toward the substrate (107) being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching.

    Abstract translation: 用于改进蚀刻工艺的设备（100）。 电源（1500,1506）在高功率和低功率周期之间交替以产生和维持等离子体放电。 高功率循环将足够的功率耦合到等离子体中以产生高密度离子（> / = 10 11 cm -3）用于蚀刻。 低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。 低功率周期的持续时间是有限的，以防止对壁（116a，116b）的过度的等离子体损失或由于负离子和正离子的复合。 单独的功率（152）源在高功率周期和低功率周期之间交替，以将离子加速朝向被蚀刻的衬底（107）。 在一个实施例中，以短脉冲串将强偏压施加到衬底。 在平均通过时间期间，多次突发发生在离子穿过等离子体护套并到达衬底表面。 离子脉冲朝表面进行蚀刻。

    ENHANCED ETCH DEPOSITION PROFILE CONTROL USING PLASMA SHEATH ENGINEERING
    7.
    发明申请
    ENHANCED ETCH DEPOSITION PROFILE CONTROL USING PLASMA SHEATH ENGINEERING 审中-公开
    使用等离子体工程的增强蚀刻沉积型材控制

    公开(公告)号：WO2010115114A3

    公开(公告)日：2011-01-13

    申请号：PCT/US2010029799

    申请日：2010-04-02

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  GODET LUDOVIC ,  MILLER TIMOTHY J ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM

    Inventor： GODET LUDOVIC ,  MILLER TIMOTHY J ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM

    IPC: H01L21/205 ,  H01L21/3065

    CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

    Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed, in this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

    Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于共形沉积材料的方法，在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角度的范围，可以将各种不同的特征沉积在其上。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

    LOW CEILING TEMPERATURE PROCESS FOR A PLASMA REACTOR WITH HEATED SOURCE OF A POLYMER-HARDENING PRECURSOR MATERIAL
    8.
    发明申请
    LOW CEILING TEMPERATURE PROCESS FOR A PLASMA REACTOR WITH HEATED SOURCE OF A POLYMER-HARDENING PRECURSOR MATERIAL 审中-公开
    用于聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程

    公开(公告)号：WO9936931A3

    公开(公告)日：2002-09-26

    申请号：PCT/US9827046

    申请日：1998-12-17

    Applicant: APPLIED MATERIALS INC

    Inventor： DING JIAN

    IPC: H01L21/3065 ,  C23C16/517 ,  H01J37/32 ,  H01L21/311 ,  H01L21/683

    CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

    Abstract: A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.

    Abstract translation: 一种高等离子体密度蚀刻工艺，用于在等离子体反应器腔室中蚀刻覆盖在工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体 包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料 包括氟清除剂前体材料。 优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。 在一些情况下，等离子体源功率施加器是覆盖半导体天花板的感应天线，天花板具有通过半导体环与天花板接触的冷却/加热设备。 在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

    ELECTRON CYCLOTRON RESONANCE PLASMA SOURCE AND METHOD OF OPERATION
    9.
    发明申请
    ELECTRON CYCLOTRON RESONANCE PLASMA SOURCE AND METHOD OF OPERATION 审中-公开
    电子循环谐振等离子体源和操作方法

    公开(公告)号：WO1990010547A1

    公开(公告)日：1990-09-20

    申请号：PCT/US1990001270

    申请日：1990-03-08

    Applicant: APPLIED MICROWAVE PLASMA CONCEPTS, INC.

    Inventor： APPLIED MICROWAVE PLASMA CONCEPTS, INC. ,  DANDL, Raphael, Anthony

    IPC: B44C01/22

    CPC classification number: H01J37/32229 ,  H01J37/32192 ,  H01J37/32678 ,  H01J2237/3323 ,  H01J2237/3345 ,  H05H1/18

    Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets (20) circumferentially arranged about a cylindrical and symmetrical chamber (12) with microwave power (44) injected perpendicularly to a longitudinal axis (14) of the chamber (12) for preventing line-of-sight communication of resulting energetic electron through an outlet (50) at one axial end of the chamber (12). The circumferential magnets (20) cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics. A magnetic field free region (60) is formed between the plasma forming region (44) and the circumferential magnets (20) in order to also produce uniformity of plasma distribution in a plasma stream approaching the outlet.

    METHOD AND APPARATUS FOR FABRICATING DEVICES USING REACTIVE ION ETCHING
    10.
    发明申请
    METHOD AND APPARATUS FOR FABRICATING DEVICES USING REACTIVE ION ETCHING 审中-公开
    使用反应离子蚀刻来制造器件的方法和装置

    公开(公告)号：WO1985001751A1

    公开(公告)日：1985-04-25

    申请号：PCT/US1984001609

    申请日：1984-10-10

    Applicant: AMERICAN TELEPHONE & TELEGRAPH COMPANY

    Inventor： AMERICAN TELEPHONE & TELEGRAPH COMPANY ,  TAI, King Lien ,  VRATNY, Frederick

    IPC: C23C15/00

    CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/3299 ,  H01J2237/3341 ,  H01J2237/3345

    Abstract: A method and apparatus for fabricating a device, which involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the disclosed reactive ion etching technique by discharging an electrode (20) of the reactive ion etching apparatus (10) in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode (20) which equals, or exceeds, a preselected value.

    Abstract translation: 一种用于制造器件的方法和装置，其涉及新的反应离子蚀刻技术。 通过所公开的反应离子蚀刻技术，通过响应于预先选择的标准（例如，一个或多个）来排放反应离子蚀刻设备（10）的电极（20），同时实现高蚀刻速率和例如高蚀刻选择性 在所述电极（20）处的DC偏压的大小等于或超过预选值。

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