Abstract:
An apparatus for engaging a workpiece against a polishing surface in a first embodiment includes a lower plate member, the lower plate member includes a hub on a top surface. An upper plate member includes a seat disposed on a bottom surface. The hub fits within the seat to form an air bearing between the lower and upper plate members. A structure supplies air to the air bearing and a flexure spring is disposed between the upper and lower plate members. The lower plate member includes vacuum holes in its bottom surface which are connected to a vacuum source which creates a vacuum pressure for holding the workpiece against the lower plate. A retainer ring including a flange is positioned about the outer edge surface of the lower plate member for holding the workpiece in place on the bottom surface of the lower plate member. A detachable pressure plate is connected to the lower plate member by at least one quick release apparatus which utilizes a locking pin secured to the pressure plate and configured to fit through a bore in the lower plate member. In a second embodiment, the upper plate member has recesses in its top and bottom surfaces. The lower plate member includes recesses in its top surface which are aligned with the upper plate member. A plurality of springs held by connecting pins are disposed in the recesses, and a flexure spring is disposed between the upper and lower plate members.
Abstract:
A conditioning device having (200) cubic boron nitride cutting elements (205) brazed-bonded to the bottom surface of the device and suitably adopted for conditioning a workpiece polishing pad by moving across the pad while in contact with the pad. The conditioning device (200) may further include a flange (202) extending about the bottom periphery of the device (200) with the cubic boron nitride cutting elements (205) being attached to the bottom surface of the flange (202). The flange (202) may include cutout portions for permitting material to escape from the interior of the device (200). The cubic boron nitride cutting elements (205) are distributed substantially uniformly across the bottom surface of the flange (202) and the elements are brazed-bonded to the flange with a braised metal alloy, creating an extremely strong bond between the cutting elements (205) and the flange (202) surface. Further, the conditioning ring may be attached to a plurality of wafer carrier elements (124) so that the conditioning process occurs during the actual polishing of the wafers (101), or the conditioning ring may be attached to a mechanical arm which engages the ring against the polishing pad between wafer polishing steps. In either case, to enhance the conditioning process, the carrier element and/or the mechanical arm suitably rotates the conditioning ring about its axis and oscillates the ring back and forth across the polishing pad.
Abstract:
The present invention provides methods and apparatus which permits in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe (500) disposed proximate to the outer perimeter of a polishing pad (126) on a CMP table, such that the probe establishes optical contact with the wafer surface (304) as a portion of the wafer extends beyond the outer perimeter (330) of the polishing pad (126). A nozzle (312) may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source (322) is employed in conjunction with a fiber optic cable (318) to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable (320). The captured reflected light received by the receptor sensor and fiber optic cable assembly is applied to a photospectrum meter (324) which analyzes the reflected light. An output signal from the photospectrum meter is transmitted to a processor (326) which includes a smart algorithm configured to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.
Abstract:
An apparatus for use with a chemical mechanical planarization (CMP) system includes a light source that generates an interrogation signal and directs the interrogation signal toward a polishing pad configured to process a workpiece during the CMP procedure. A reflected signal produced in response to the interrogation signal is received by a detector, and the optical characteristics of the reflected signal are processed and analyzed to determine whether extraneous material is present within an area of the polishing pad. The apparatus may employ alternative light sources and processing techniques to advantageously operate in conjunction with a variety of polishing pads having different physical characteristics.
Abstract:
A wafer polishing apparatus (100) includes a wafer polishing assembly (132) having a plurality of wafer carriers (139-143) for substantially simultaneously polishing a plurality of wafers against a rotating polishing surface (134). A plurality of wafers to be polished are substantially simultaneously loaded into the plurality of wafer carriers (139-143) by wafer holding apparatus of an index table (117). Similarly, a plurality of polished wafers are substantially simultaneously unloaded from the plurality of wafer carriers (139-143) into wafer holding apparatus of the index table (117). The wafer carriers (139-143) are individually computer (103) controlled for exact polishing and different polishing requirements can be met at the same time by different wafer carriers.
Abstract:
A wafer polishing apparatus (100) includes a wafer polishing assembly (132) having a plurality of wafer carriers (139-143) for substantially simultaneously polishing a plurality of wafers against a rotating polishing surface (134). A plurality of wafers to be polished are substantially simultaneously loaded into the plurality of wafer carriers (139-143) by wafer holding apparatus of an index table (117). Similarly, a plurality of polished wafers are substantially simultaneously unloaded from the plurality of wafer carriers (139-143) into wafer holding apparatus of the index table (117). The wafer carriers (139-143) are individually computer (103) controlled for exact polishing and different polishing requirements can be met at the same time by different wafer carriers.
Abstract:
An apparatus for evenly polishing or planarizing the surfaces of workpieces comprising a polishing pad with a plurality of grooves along the surface of the pad for uniformly guiding a slurry radially outward across the surface of the pad. Preferably, the grooves are arc-shaped and extend radially outward from the center of the polishing pad to the outer edge of the pad, the angle of the arc being in the same direction as the angular rotation of the polishing pad; the grooves along the pad are cut in a U-shape or V-shape; and the grooves are equally spaced apart from each other along the surface of the pad.
Abstract:
A lapping pad (31) used to polish wafers in a CMP process comprising a substantially flat surface (32) having relatively few surface irregularities (34). The lapping pad (31) is suitably made from a porous material which permits the adsorption and/or entrainment of suitable slurries, for example, aqueous high pH slurries comprising colloidal silica, or the like. Moreover, pad (31) is relatively pliable to permit the undersurface of pad (31) to conform to the global topography of a workpiece (12) being polished without damaging the delicate microstructures (24) associated with workpiece (12) as pressures are applied between pad (31) and workpiece (12). Finally, the flat surface (32) of pad (31) urges particles (14) onto surface (18) of workpiece (12) more uniformly, thereby resulting in a more uniform planar surface (18) of workpiece (12).
Abstract:
The present invention relates to a wafer cleaning machine having an input station, a water track, a cleaning station, a rinsing station, a spin-dry station, and a load station. The input station includes two or more wafer supply areas for a continuous supply of wafers to the water track. After the wafers enter the water track from the input station, the wafers are transported down the track into the wafer cleaning station. The wafer cleaning station comprises a plurality of pairs of rollers which pull the wafers through the cleaning station and thereby clean the top and bottom flat surfaces of the wafers. A cleaning fluid manifold formed within the upper panel of the cleaning station facilitates effective distribution of the cleaning fluid to the rollers. From the cleaning station, the wafers are transported to a rinse station. From the rinsing station, the workpieces are transferred to a dual spin-dry station. At the spin-dry station, the workpieces are spun at a high speed to remove any residual water droplets or the like. From the dual spin-dry station, a robotic transfer arm removes the workpieces from the spin-dry station and places them in one o f a pair of unload cassettes. After the cassettes are filled with wafers, they are removed and transferred for subsequent processing.
Abstract:
A device (18) for conditioning the surface of a polishing pad (15) covering a platen mounted on a polishing machine for rotation about a vertical axis, comprising a rigid carrier element (20) carrying cutting means (25) on its bottom surface and which is adapted for vertical movement into and out of engagement with the surface of a polishing pad (15) and which is adapted for oscillating horizontal movement over the surface of the polishing pad (15). The cutting means (25) are dispersed in a circular or ring configuration.