公开(公告)号：WO2008061128A3

公开(公告)日：2008-05-22

申请号：PCT/US2007/084650

申请日：2007-11-14

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TESSMER, Glenn, J. ,  HORTALEZA, Edgardo, R. ,  BRIGGS, Thad, E.

Inventor： TESSMER, Glenn, J. ,  HORTALEZA, Edgardo, R. ,  BRIGGS, Thad, E.

IPC: H01L21/4763

Abstract: A semiconductor device having copper interconnecting metallization (111) protected by a first (102) and a second (120) overcoat layer (homogeneous silicon dioxide), portions of the metallization exposed in a window (103) opened through the thicknesses of the first and second overcoat layers. A patterned conductive barrier layer (130) is positioned on the exposed portion of the copper metallization and on portions of the second overcoat layer surrounding the window. A bondable metal layer (150) is positioned on the barrier layer; the thickness of this bondable layer is suitable for wire bonding. A third overcoat layer (160) consist of a homogeneous silicon nitride compound is positioned on the second overcoat layer so that the ledge (162, more than 500 nm high) of the third overcoat layer overlays the edge (150b) of the bondable metal layer. The resulting contoured chip surface improves the adhesion to plastic device encapsulation.

公开(公告)号：WO2008061128A2

公开(公告)日：2008-05-22

申请号：PCT/US2007084650

申请日：2007-11-14

Applicant: TEXAS INSTRUMENTS INC ,  TESSMER GLENN J ,  HORTALEZA EDGARDO R ,  BRIGGS THAD E

Inventor： TESSMER GLENN J ,  HORTALEZA EDGARDO R ,  BRIGGS THAD E

IPC: H01L21/56 ,  H01L23/50

CPC classification number: H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

Abstract: A semiconductor device having copper interconnecting metallization (111) protected by a first (102) and a second (120) overcoat layer (homogeneous silicon dioxide), portions of the metallization exposed in a window (103) opened through the thicknesses of the first and second overcoat layers. A patterned conductive barrier layer (130) is positioned on the exposed portion of the copper metallization and on portions of the second overcoat layer surrounding the window. A bondable metal layer (150) is positioned on the barrier layer; the thickness of this bondable layer is suitable for wire bonding. A third overcoat layer (160) consist of a homogeneous silicon nitride compound is positioned on the second overcoat layer so that the ledge (162, more than 500 nm high) of the third overcoat layer overlays the edge (150b) of the bondable metal layer. The resulting contoured chip surface improves the adhesion to plastic device encapsulation.

Abstract translation: 具有由第一（102）和第二（120）外涂层（均匀二氧化硅）保护的铜互连金属化（111）的半导体器件，暴露在窗口（103）中的金属化部分暴露在第一和/ 第二层涂层。 图案化的导电阻挡层（130）被定位在铜金属化的暴露部分上以及围绕窗口的第二覆盖层的部分上。 可粘合金属层（150）位于阻挡层上; 该可结合层的厚度适合于引线接合。 由均匀的氮化硅化合物构成的第三外涂层（160）位于第二外涂层上，使得第三外涂层的凸缘（162，大于500nm高）覆盖在可结合金属层的边缘（150b）上 。 所形成的轮廓芯片表面改善了对塑料器件封装的粘附性。