公开(公告)号：WO2018232103A1

公开(公告)日：2018-12-20

申请号：PCT/US2018/037512

申请日：2018-06-14

Applicant: APPLIED MATERIALS, INC.

Inventor： KE, Chang ,  ZHOU, Lei ,  LIU, Biao ,  PAN, Cheng ,  GUO, Yuanhong ,  WU, Liqi ,  JACKSON, Michael S. ,  GODET, Ludovic ,  KAUFMAN-OSBORN, Tobin ,  CHEN, Erica ,  MA, Paul F.

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/0271 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：WO2016060753A1

公开(公告)日：2016-04-21

申请号：PCT/US2015/048956

申请日：2015-09-08

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  YIM, Kang Sub ,  PAN, Cheng ,  NGO, Sure ,  KIM, Taewan ,  DEMOS, Alexandros T.

IPC: H01L21/31

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：WO2019099190A1

公开(公告)日：2019-05-23

申请号：PCT/US2018/058334

申请日：2018-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： LIU, Biao ,  PAN, Cheng ,  CHEN, Erica ,  NEMANI, Srinivas D. ,  KE, Chang ,  ZHOU, Lei

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/455

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：WO2019245659A1

公开(公告)日：2019-12-26

申请号：PCT/US2019/030742

申请日：2019-05-03

Applicant: APPLIED MATERIALS, INC.

Inventor： KIM, Jong Mun ,  LIU, Biao ,  PAN, Cheng ,  CHEN, Erica ,  YING, Chentsau ,  NEMANI, Srinivas D. ,  YIEH, Ellie

IPC: H01L21/304 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.