公开(公告)号：WO2016209539A1

公开(公告)日：2016-12-29

申请号：PCT/US2016/034434

申请日：2016-05-26

Applicant: APPLIED MATERIALS, INC.

Inventor： REN, He ,  NAIK, Mehul B. ,  PADHI, Deenesh ,  DASH, Priyanka ,  KUMAR, Bhaskar ,  DEMOS, Alexandros T.

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/36 ,  C23C16/482 ,  C23C16/56 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.

Abstract translation: 提供了一种用于密封多孔低k电介质膜的方法。 该方法包括将衬底暴露于UV辐射和第一反应气体，其中衬底具有限定在其中的开放特征，由多孔低k电介质层和导电材料限定的开放特征，其中多孔低k电介质层 是含硅和碳的材料，并使用UV辅助光化学气相沉积在多孔低k电介质层的暴露表面上的开放特征中选择性地形成孔密封层。

公开(公告)号：WO2014143337A1

公开(公告)日：2014-09-18

申请号：PCT/US2013/077219

申请日：2013-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： YIM, Kang Sub ,  ARDALAN, Pendar ,  NGO, Sure ,  DEMOS, Alexandros T.

IPC: H01L21/31 ,  H01L21/205

CPC classification number: H01L29/06 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/7682 ,  H01L21/76829 ,  H01L2221/1047

Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.

Abstract translation: 本发明的实施例提供了一种薄膜堆叠和用于沉积低介电常数体积层的粘合剂层的方法，而不需要起始层。 用于半导体器件的薄膜叠层包括直接沉积在下层上的双层低K电介质。 双低K电介质由不含无碳的起始层沉积的粘合剂层组成。

公开(公告)号：WO2008094792A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/051731

申请日：2008-01-22

Applicant: APPLIED MATERIALS, INC. ,  DEMOS, Alexandros T. ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  WITTY, Derek R. ,  M'SAAD, Hichem

Inventor： DEMOS, Alexandros T. ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  WITTY, Derek R. ,  M'SAAD, Hichem

IPC: H01L23/482 ,  H01L21/469

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap In one embodiment, a method is provided for forming a damascene structure compnses depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen -containing matenal, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature defintion in the organic and dielectric constant layer, filling the feature definition with a conductive material, depositing a mask layer on the organic layer, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive matenal.

Abstract translation: 提供用于形成包括气隙的结构的方法。在一个实施例中，提供了一种用于形成镶嵌结构的方法，其包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层， 致孔剂材料，并且除去至少一部分含致孔剂的马氏体，通过使造孔剂提供前体反应，在有机和介电常数层中形成特征定义，将有机层沉积在多孔低介电常数层上，填充 具有导电材料的特征定义，在有机层上沉积掩模层，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，以及形成邻近导电的气隙 matenal。

公开(公告)号：WO2015126775A1

公开(公告)日：2015-08-27

申请号：PCT/US2015/016012

申请日：2015-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： KIM, Taewan ,  YIM, Kang Sub ,  DEMOS, Alexandros T.

IPC: H01L21/316

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348

Abstract: Embodiments of the present invention generally provide a method and apparatus for forming a low-k dielectric porous silicon oxycarbon layer within an integrated circuit. In one embodiment, a method is provided for depositing a porogen and bulk layer containing silicon oxycarbon layer, selectively removing the porogens from the formed layer without simultaneously cross-linking the bulk layer, and then cross-linking the bulk layer material. In other embodiments, methods are provided for depositing multiple silicon oxycarbon sublayers, selectively removing porogens from each sub-layer without simultaneously cross-linking the bulk material of the sub-layer, and separately cross-linking the sub-layers.

Abstract translation: 本发明的实施方案通常提供了用于在集成电路内形成低k电介质多孔硅氧化碳层的方法和装置。 在一个实施方案中，提供了一种用于沉积含有硅氧化碳层的致孔剂和本体层的方法，选择性地从成形层除去致孔剂，而不同时交联本体层，然后交联本体层材料。 在其它实施方案中，提供了用于沉积多个硅氧化碳亚层的方法，从每个子层选择性地除去致孔剂，而不同时交联子层的主体材料，以及分别交联子层。

公开(公告)号：WO2012102997A2

公开(公告)日：2012-08-02

申请号：PCT/US2012/022195

申请日：2012-01-23

Applicant: APPLIED MATERIALS, INC ,  XIE, Bo ,  DEMOS, Alexandros T. ,  ROCHA-ALVAREZ, Juan Carlos ,  BALUJA, Sanjeev

Inventor： XIE, Bo ,  DEMOS, Alexandros T. ,  ROCHA-ALVAREZ, Juan Carlos ,  BALUJA, Sanjeev

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L28/40 ,  H01L21/3105 ,  H01L28/90

Abstract: The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.

Abstract translation: 本发明提供用于制造存储器单元的系统，方法和设备。 本发明包括形成具有第一介电材料中的侧壁的特征; 在特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将第二电介质材料暴露于氧化物质和紫外光以氧化第二电介质材料。 披露了许多其他方面。

公开(公告)号：WO2007117320A2

公开(公告)日：2007-10-18

申请号：PCT/US2006/061789

申请日：2006-12-08

Applicant: APPLIED MATERIALS, INC. ,  AHN, Sang H. ,  DEMOS, Alexandros T. ,  M'SAAD, Hichem

Inventor： AHN, Sang H. ,  DEMOS, Alexandros T. ,  M'SAAD, Hichem

IPC: C23C16/00 ,  C08J7/04

CPC classification number: C23C16/401 ,  C08J7/065 ,  C08J7/08 ,  C08J7/12 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si-C bonds per Si atom. The second organosilicon compound has an average number of Si-C bonds per Si atom that is greater than the average number of Si-C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.

Abstract translation: 提供了一种用包含两种有机硅化合物的混合物在腔室中的衬底上沉积低介电常数膜的方法。 该混合物可以进一步包括烃化合物和氧化气体。 第一有机硅化合物具有平均每个Si原子一个或多个Si-C键。 第二有机硅化合物具有大于第一有机硅化合物中每个Si原子的Si-C键平均数的每个Si原子的平均Si-C键数。 低介电常数薄膜具有良好的抗等离子体/湿法刻蚀损伤，良好的机械性能和理想的介电常数。

公开(公告)号：WO2005109484A1

公开(公告)日：2005-11-17

申请号：PCT/US2005/002927

申请日：2005-01-27

Applicant: APPLIED MATERIALS, INC. ,  CUI, Zhenjiang ,  CHANG, Josephine J. ,  DEMOS, Alexandros T. ,  ARGHAVANI, Reza ,  WITTY, Derek R. ,  ARMER, Helen R. ,  DIXIT, Girish A. ,  M'SAAD, Hichem

Inventor： CUI, Zhenjiang ,  CHANG, Josephine J. ,  DEMOS, Alexandros T. ,  ARGHAVANI, Reza ,  WITTY, Derek R. ,  ARMER, Helen R. ,  DIXIT, Girish A. ,  M'SAAD, Hichem

IPC: H01L21/316

CPC classification number: H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

Abstract: A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

Abstract translation: 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于期望的高温约5秒或更短。 在一个方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

公开(公告)号：WO2014011364A1

公开(公告)日：2014-01-16

申请号：PCT/US2013/046285

申请日：2013-06-18

Applicant: APPLIED MATERIALS, INC. ,  CHAN, Kelvin ,  XU, Jin ,  YIM, Kang Sub ,  DEMOS, Alexandros T.

Inventor： CHAN, Kelvin ,  XU, Jin ,  YIM, Kang Sub ,  DEMOS, Alexandros T.

IPC: H01L21/31

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si-OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。

公开(公告)号：WO2013002899A1

公开(公告)日：2013-01-03

申请号：PCT/US2012/037822

申请日：2012-05-14

Applicant: APPLIED MATERIALS, INC. ,  YIM, Kang Sub ,  NOWAK, Thomas ,  XIE, Bo ,  DEMOS, Alexandros T.

Inventor： YIM, Kang Sub ,  NOWAK, Thomas ,  XIE, Bo ,  DEMOS, Alexandros T.

IPC: H01L21/205

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

Abstract: Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和含碳化合物的修复过程从孔中除去水，并进一步从低k膜结构中去除亲水性化合物。

公开(公告)号：WO2012148641A2

公开(公告)日：2012-11-01

申请号：PCT/US2012/032203

申请日：2012-04-04

Applicant: APPLIED MATERIALS, INC. ,  XIE, Bo ,  DEMOS, Alexandros T. ,  YIM, Kang Sub ,  NOWAK, Thomas ,  CHAN, Kelvin

Inventor： XIE, Bo ,  DEMOS, Alexandros T. ,  YIM, Kang Sub ,  NOWAK, Thomas ,  CHAN, Kelvin

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。