公开(公告)号：WO2022060613A1

公开(公告)日：2022-03-24

申请号：PCT/US2021/049509

申请日：2021-09-08

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  XIONG, Ruitong ,  NGO, Sure ,  YIM, Kang S. ,  LIU, Yijun ,  XIA, Li-Qun

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/50

Abstract: Embodiments of the semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (κ value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.

公开(公告)号：WO2022076303A1

公开(公告)日：2022-04-14

申请号：PCT/US2021/053367

申请日：2021-10-04

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  XIONG, Ruitong ,  NGO, Sure ,  YIM, Kang Sub ,  LIU, Yijun ,  XIA, Li-Qun

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/50 ,  C23C16/56

Abstract: Semiconductor processing methods are described for forming UV-treated, low-κ dielectric films. The methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-carbon-containing precursor. The methods may further include generating a deposition plasma from the deposition precursors within the substrate processing region, and depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The as-deposited silicon-and-carbon-containing material may be characterized by greater than or about 5% hydrocarbon groups. The methods may still further include exposing the deposited silicon-and-carbon-containing material to ultraviolet light. The exposed silicon-and-carbon-containing material may be characterized by less than or about 2% hydrocarbon groups.

公开(公告)号：WO2022055896A1

公开(公告)日：2022-03-17

申请号：PCT/US2021/049316

申请日：2021-09-07

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  XIONG, Ruitong ,  YIM, Kang Sub ,  LIU, Yijun ,  XIA, Li-Qun ,  NGO, Sure

IPC: C23C16/44 ,  C23C16/40 ,  H01L21/02

Abstract: Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.

公开(公告)号：WO2014143337A1

公开(公告)日：2014-09-18

申请号：PCT/US2013/077219

申请日：2013-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： YIM, Kang Sub ,  ARDALAN, Pendar ,  NGO, Sure ,  DEMOS, Alexandros T.

IPC: H01L21/31 ,  H01L21/205

CPC classification number: H01L29/06 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/7682 ,  H01L21/76829 ,  H01L2221/1047

Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.

Abstract translation: 本发明的实施例提供了一种薄膜堆叠和用于沉积低介电常数体积层的粘合剂层的方法，而不需要起始层。 用于半导体器件的薄膜叠层包括直接沉积在下层上的双层低K电介质。 双低K电介质由不含无碳的起始层沉积的粘合剂层组成。

公开(公告)号：WO2011106075A2

公开(公告)日：2011-09-01

申请号：PCT/US2011/000215

申请日：2011-02-03

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  DEMOS, Alexandros, T. ,  RAJ, Daemian ,  NGO, Sure ,  YIM, Kang, Sub

IPC: H01L21/3205 ,  H01L21/205 ,  H01L21/28

CPC classification number: H01L21/02274 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76835

Abstract: Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.

Abstract translation: 本发明的实施例涉及微电子结构的形成。 对于32nm的下一个技术节点，低k电介质材料需要表现出小于约2.6的介电常数。 本发明能够形成利用这种低k电介质材料的半导体器件，同时提供整体上微电子结构的改进的弯曲和剪切强度的完整性。

公开(公告)号：WO2016060753A1

公开(公告)日：2016-04-21

申请号：PCT/US2015/048956

申请日：2015-09-08

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  YIM, Kang Sub ,  PAN, Cheng ,  NGO, Sure ,  KIM, Taewan ,  DEMOS, Alexandros T.

IPC: H01L21/31

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：WO2014158351A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/014678

申请日：2014-02-04

Applicant: APPLIED MATERIALS, INC.

Inventor： YIM, Kang Sub ,  ARDALAN, Pendar ,  NGO, Sure ,  DEMOS, Alexandros T.

IPC: H01L21/205

CPC classification number: H01L21/31058 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02359 ,  H01L21/3105

Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.

Abstract translation: 本文公开了一种用于沉积具有一个或多个特征的低K电介质膜的方法和装置。 形成电介质层的方法可以包括将衬底定位在处理室中，将沉积气体输送到处理室中，使用沉积气体在衬底的表面上沉积致密的有机硅层，致密有机硅层包含致孔碳 将图案转移到致密的有机硅层中，从反应气体形成成孔等离子体，将致密的有机硅层暴露于成孔等离子体以产生多孔有机硅层，其中成孔等离子体去除至少一部分 的造孔碳，并将多孔有机硅层暴露于干燥后处理。

公开(公告)号：WO2012087493A2

公开(公告)日：2012-06-28

申请号：PCT/US2011/062197

申请日：2011-11-28

Applicant: APPLIED MATERIALS, INC. ,  YIM, Kang Sub ,  XU, Jin ,  NGO, Sure ,  DEMOS, Alexandros T.

Inventor： YIM, Kang Sub ,  XU, Jin ,  NGO, Sure ,  DEMOS, Alexandros T.

IPC: H01L21/31 ,  H01L21/3105

CPC classification number: H01L21/02214 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L2221/1047

Abstract: A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps.

Abstract translation: 提供了一种用于形成包括气隙的低k电介质层的方法和装置。 在一个实施例中，提供了一种处理衬底的方法。 该方法包括在等离子体存在下将处理区域内的底物，有机硅化合物与氧化气体和造孔剂提供前体反应，将含有硅，氧和碳的低k电介质层的致孔剂沉积在 在包含低k电介质层的致孔剂上沉积包含硅，氧和碳的多孔电介质覆盖层，以及紫外线（UV）固化包含低k电介质层的致孔剂和多孔介电覆盖层以除去至少一个 致孔剂部分由含有低k电介质层的致孔剂穿过多孔介电覆盖层，以将含有低介电常数的介电层转化为具有气隙的多孔低k电介质层。