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    MEMORY DEVICE WITH PAGE EMULATION MODE
    1.
    发明申请
    MEMORY DEVICE WITH PAGE EMULATION MODE 审中-公开
    具有页面模拟模式的存储器件

    公开(公告)号：WO2015009331A1

    公开(公告)日：2015-01-22

    申请号：PCT/US2014/011634

    申请日：2014-01-15

    Applicant: ALAM, Syed M. ,  ANDRE, Thomas ,  EVERSPIN TECHNOLOGIES, INC.

    Inventor： ALAM, Syed M. ,  ANDRE, Thomas

    IPC: G06F12/00 ,  G06F12/10

    CPC classification number: G06F11/1096 ,  G06F11/1064 ,  G06F12/0882 ,  G06F2211/109 ,  G06F2212/652 ,  G11C14/0036

    Abstract: In some examples, a memory device is configured to load multiple pages of an internal page size into a cache in response to receiving an activate command and to write multiple pages of the internal page size into a memory array in response to receiving a precharge command. In some implementations, the memory array is arranged to store multiple pages of the internal page size in a single physical row.

    Abstract translation: 在一些示例中，存储器设备被配置为响应于接收到激活命令而将内部页面大小的页面加载到高速缓存中，并且响应于接收到预充电命令而将内部页面大小的多页写入存储器阵列。 在一些实现中，存储器阵列被布置成在单个物理行中存储内部页面大小的多个页面。

    WRITE DRIVER CIRCUIT AND METHOD FOR WRITING TO A SPIN-TORQUE MRAM
    2.
    发明申请
    WRITE DRIVER CIRCUIT AND METHOD FOR WRITING TO A SPIN-TORQUE MRAM 审中-公开
    写入驱动器电路和写入转矩MRAM的方法

    公开(公告)号：WO2013075094A1

    公开(公告)日：2013-05-23

    申请号：PCT/US2012/065840

    申请日：2012-11-19

    Applicant: EVERSPIN TECHNOLOGIES INC.

    Inventor： ALAM, Syed M. ,  ANDRE, Thomas

    IPC: G11C7/00

    CPC classification number: G11C11/1675 ,  G11C11/15 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673

    Abstract: A write driver for writing to a spin-torque magnetoresistive random access memory (ST-MRAM) minimizes sub-threshold leakage of the unselected (off) word line select transistors in the selected column. An effective metal resistance in the bit line and/or source line is reduced and power supply noise immunity is increased. Write driver bias signals are isolated from global bias signals, and a first voltage is applied at one end of a bit line using one of a first NMOS-follower circuit or a first PMOS-follower circuit. A second voltage is applied at opposite ends of a source line using, respectively, second and third PMOS- follower circuits, or second and third NMOS-follower circuits.

    Abstract translation: 用于写入自旋扭矩磁阻随机存取存储器（ST-MRAM）的写入驱动器使选定列中未选择（关闭）字线选择晶体管的亚阈值泄漏最小化。 位线和/或源极线中的有效金属电阻降低，并且提供电源抗扰度。 写入驱动器偏置信号与全局偏置信号隔离，并且使用第一NMOS跟随器电路或第一PMOS跟随器电路之一，在位线的一端施加第一电压。 分别使用第二和第三PMOS跟随器电路或第二和第三NMOS跟随器电路在源极线的相对端施加第二电压。

    DELAYED WRITE-BACK IN MEMORY
    3.
    发明申请
    DELAYED WRITE-BACK IN MEMORY 审中-公开
    在存储器中延迟回写

    公开(公告)号：WO2017189065A1

    公开(公告)日：2017-11-02

    申请号：PCT/US2017/015637

    申请日：2017-01-30

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： ANDRE, Thomas ,  ALAM, Syed M. ,  SUBRAMANIAN, Chitra ,  BARKATULLAH, Javed S.

    IPC: G11C11/16 ,  G11C7/22 ,  G11C7/10 ,  G11C16/32

    Abstract: A memory having a delayed write-back to the array of data corresponding to a previously opened page allows delays associated with write-back operations to be avoided. After an initial activation opens a first page and the read/write operations for that page are complete, write-back of the open page to the array of memory cells is delayed until after completion of a subsequent activate operation that opens a new page. Techniques to force a write-back in the absence of another activate operation are also disclosed.

    Abstract translation: 具有延迟回写到对应于先前打开的页面的数据阵列的存储器允许避免与回写操作相关联的延迟。 在初始激活打开第一页并且该页的读取/写入操作完成之后，打开页面回写到存储器单元阵列被延迟直到完成后续激活操作（打开新页面）之后。 还公开了在没有另一个激活操作的情况下强制回写的技术。

    SELF REFERENCING SENSE AMPLIFIER FOR SPIN TORQUE MRAM
    6.
    发明申请
    SELF REFERENCING SENSE AMPLIFIER FOR SPIN TORQUE MRAM 审中-公开
    自适应感应放大器用于旋转扭矩MRAM

    公开(公告)号：WO2013169593A2

    公开(公告)日：2013-11-14

    申请号：PCT/US2013/039466

    申请日：2013-05-03

    Applicant: SUBRAMANIAN, Chitra ,  ALAM, Syed M. ,  EVERSPIN TECHNOLOGIES, INC.

    Inventor： SUBRAMANIAN, Chitra ,  ALAM, Syed M.

    IPC: G11C11/16

    CPC classification number: G11C11/1673

    Abstract: Circuitry and a method provide self-referenced sensing of a resistive memory cell by using its characteristic of resistance variation with applied voltage in one state versus a relatively constant resistance regardless of the applied voltage in its opposite state. Based on an initial bias state with equalized resistances, a current comparison at a second bias state between a mock bit line and a bit line is used to determine the state of the memory cell, since a significant difference in current implies that the memory cell state has a significant voltage coefficient of resistance. An offset current applied to the mock bit line optionally may be used to provide symmetry and greater sensing margin.

    Abstract translation: 电路和方法通过使用其在一个状态下的施加电压与相对恒定电阻的电阻变化的特性来提供电阻性存储单元的自参考感测，而不管其相反状态下的施加电压如何。 基于具有均衡电阻的初始偏置状态，使用模拟位线和位线之间的第二偏置状态下的电流比较来确定存储器单元的状态，因为电流的显着差异意味着存储单元状态 具有显着的电阻系数。 施加到模拟位线的偏移电流可选地可以用于提供对称性和更大的感测余量。

    SHARED SPIN-ORBIT-TORQUE WRITE LINE IN A SPIN-ORBIT-TORQUE MRAM
    7.
    发明申请
    SHARED SPIN-ORBIT-TORQUE WRITE LINE IN A SPIN-ORBIT-TORQUE MRAM 审中-公开

    公开(公告)号：WO2020150142A3

    公开(公告)日：2020-07-23

    申请号：PCT/US2020/013329

    申请日：2020-01-13

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： ALAM, Syed M. ,  ANDRE, Thomas ,  MANCOFF, Frederick ,  IKEGAWA, Sumio

    IPC: G11C11/16

    Abstract: The present disclosure is drawn to, among other things, a magnetoresistive memory. The magnetoresistive memory comprises a plurality of magnetoresistive memory devices, wherein each magnetoresistive memory device includes a fixed magnetic region, a free magnetic region, and an intermediate region disposed in between the fixed and free magnetic regions. The magnetoresistive memory further comprises a first conductor extending adjacent each magnetoresistive memory device of the plurality of magnetoresistive devices, wherein the first conductor is in electrical contact with the free magnetic region of each magnetoresistive memory device.

    METHOD OF READING AND WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH ERROR CORRECTING CODE
    10.
    发明申请
    METHOD OF READING AND WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH ERROR CORRECTING CODE 审中-公开
    读取和写入具有错误校正代码的旋转扭矩随机存取存储器的方法

    公开(公告)号：WO2012106358A1

    公开(公告)日：2012-08-09

    申请号：PCT/US2012/023364

    申请日：2012-01-31

    Applicant: EVERSPIN TECHNOLOGIES, INC. ,  ALAM, Syed M. ,  ANDRE, Thomas ,  CROFT, Matthew R.

    Inventor： ALAM, Syed M. ,  ANDRE, Thomas ,  CROFT, Matthew R.

    IPC: G06F11/00

    CPC classification number: G06F11/1076 ,  G06F11/1012 ,  G06F11/1048 ,  G11C11/1673 ,  G11C11/1675 ,  H03M13/2906

    Abstract: A method includes destructively reading bits of a spin torque magnetic random access memory, using error correcting code (ECC) for error correction, and storing inverted or non-inverted data in data-store latches. When a subsequent write operation changes the state of data-store latches, parity calculation and majority detection of the bits are initiated. A majority bit detection and potential inversion of write data minimizes the number of write current pulses. A subsequent write operation received within a specified time or before an original write operation is commenced will cause the majority detection operation to abort.

    Abstract translation: 一种方法包括使用用于纠错的纠错码（ECC）和将反相或非反相数据存储在数据存储锁存器中来自动读取自旋扭矩磁随机存取存储器的位。 当随后的写入操作改变数据存储锁存器的状态时，启动奇偶校验计算和多数位的检测。 写入数据的多数位检测和潜在反转使写入电流脉冲的数量最小化。 在指定时间内或原始写入操作开始之前接收到的后续写入操作将导致多数检测操作中止。

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