Abstract:
Provided is a compressible thermal interface material including a polymer, a thermally conductive filler, and a phase change material. A formulation for forming a compressible thermal interface material and an electronic component including a compressible thermal interface material are also provided.
Abstract:
A thermal interface material includes, in one exemplary embodiment, at least one polymer, at least one phase change material, at least one crosslinker, and at least one thermally conductive filler. The at least one thermally conductive includes a first plurality of particles having a particle diameter of about 1 micron or less. The at least one thermally conductive filler comprises at least 80wt.% of the total weight of the thermal interface material. A formulation for forming a thermal interface material and an electronic component including a thermal interface material are also provided.
Abstract:
Poly fluorine-containing siloxane coatings having improved hydrophobic and oleophobic properties and solutions for creating such coatings are provided. In some embodiments, the coating includes a polymer having a plurality of Si-O-Si linkages; and at least two fluorine-containing moieties, each attached to at least one of the Si-O-Si linkages. Each fluorine-containing moiety independently includes a linking portion attached to a silicon of one of the Si-O-Si linkages, wherein the linking portion is of a formula selected from the group consisting of: -[CH 2 ] a - where a is an integer from 1 to 10 and -[CH 2 ] b CONH[CH 2 ] c - where b and c are independently an integer from 0 to 10. Each fluorine-containing moiety also independently includes a fluorinated portion attached to the linking portion, wherein the fluorinated portion is selected from a fluorinated-alkyl group having 1-10 carbon atoms and a perfluoro-ether containing organic group.
Abstract:
Substantially silane-free phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material using substantially silane-free phosphorous-comprising dopants, and a method for fabricating substantially silane-free phosphorous-comprising dopants are provided. A phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or combinations thereof, an alkaline material, cations from an alkaline material, or combinations thereof, and a liquid medium. The phosphorous-comprising dopant comprises less than 0.1wt.% silanes, oligomers and/or polymers derived from silanes, or a combination thereof.
Abstract:
A thermal interface material includes, in one exemplary embodiment, a polymer, a phase change material, a first thermally conductive filler having a first particle size, and a second thermally conductive filler having a second particle size. The first particle size is larger than the second particle size. A formulation for forming a thermal interface material and an electronic component including a thermal interface material are also provided.
Abstract:
A thermal interface material includes at least one polymer,at least one thermally conductive filler; and at least one ion scavenger. In some embodiments, the ion scavenger is a complexing agent selected from the group consisting of : nitrogen containing complexing agents,phosphorus containing complexing agents, and hydroxyl carboxylic acid based complexing agents.