FAN-OUT WAFER-LEVEL PACKAGING METHOD AND THE PACKAGE PRODUCED THEREOF
    1.
    发明申请
    FAN-OUT WAFER-LEVEL PACKAGING METHOD AND THE PACKAGE PRODUCED THEREOF 审中-公开
    扇出晶圆级封装方法及其生产的封装

    公开(公告)号:WO2017196257A1

    公开(公告)日:2017-11-16

    申请号:PCT/SG2017/050229

    申请日:2017-04-27

    摘要: A fan-out wafer-level packaging method and the package produced thereof are provided in the present application. The method comprises steps including: providing a silicon substrate layer having a first thickness; forming one or more active/passive devices comprising at least sources and drains and one or more diffusion layers adjoining the sources and drains, wherein forming the one or more active/passive devices comprises forming the sources and the drains in a front-end-of-line (FEOL) layer on a first side of the silicon substrate layer while forming the one or more diffusion layers at locations in the silicon substrate layer adjoining the sources and the drains; forming a redistribution layer (RDL) over the FEOL layer by copper damascene formation of multiple metallization layers for connecting the one or more active/passive devices to the one or more IC dies when the one or more IC dies are mounted on a side of the RDL opposite the FEOL layer; thinning the silicon substrate layer to a second thickness to form a thinned silicon substrate, the thinned silicon substrate comprising at least the one or more diffusion layers; and patterning the thinned silicon substrate to form one or more silicon regions, each of the one or more silicon regions comprising the one or more diffusion layers.

    摘要翻译: 在本申请中提供了一种扇出晶片级封装方法及其制造的封装。 该方法包括以下步骤:提供具有第一厚度的硅衬底层; 形成至少包括源极和漏极以及邻接所述源极和漏极的一个或多个扩散层的一个或多个有源/无源器件,其中形成所述一个或多个有源/无源器件包括在所述源极和漏极的前端 在所述硅衬底层的第一侧上形成一层或多层扩散层,同时在所述硅衬底层中邻接所述源极和所述漏极的位置处形成所述一个或多个扩散层; 当一个或多个IC管芯安装在一个或多个IC管芯的一侧上时,通过铜金属镶嵌形成多个金属化层在FEOL层上形成重新分布层(RDL),用于将一个或多个有源/ RDL与FEOL层相对; 将所述硅衬底层减薄到第二厚度以形成减薄的硅衬底,所述减薄的硅衬底包括至少所述一个或多个扩散层; 以及图案化所述减薄的硅衬底以形成一个或多个硅区域,所述一个或多个硅区域中的每一个包括所述一个或多个扩散层。