公开(公告)号：WO2003092013A3

公开(公告)日：2003-11-06

申请号：PCT/US2003/011989

申请日：2003-04-17

Applicant: MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE

Inventor： BUTCHER, Brian, R. ,  KYLER, Kelly, W. ,  GRYNKEWICH, Gregory, W. ,  DURLAM, Mark, A. ,  FUCHS, Earl, D.

IPC: G11C11/15

Abstract: A method of fabricating a magnetoresistive random access memory device (10) comprising the steps of providing a substrate (11), forming a first conductive layer positioned on the substrate (16), forming a conductive material stack region with a flat surface, the conductive material stack region being positioned on a portion of the first conductive layer, and forming a magnetoresistive random access memory device (27) positioned on the flat surface of the conductive material stack region, the magnetoresistive random access memory device being isolated from the first conductive layer and subsequent layers grown thereon.

公开(公告)号：WO2004004435A1

公开(公告)日：2004-01-08

申请号：PCT/US2003/019253

申请日：2003-06-18

Applicant: MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE

Inventor： RIZZO, Nicholas, D. ,  DURLAM, Mark, A. ,  ROLL, Michael, J. ,  KYLER, Kelly ,  MOLLA, Jaynal, A.

IPC: H05K9/00

CPC classification number: H05K9/0075 ,  H01L21/6835 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L27/222 ,  H01L2221/68331 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4911 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A shielded electronic integrated circuit apparatus (7) comprising a substrate (10) with an electronic integrated circuit (14) formed thereon, a dielectric region (12) positioned on the substrate and the electronic integrated circuit wherein the dielectric region and the substrate are substantially surrounded by a magnetic material region (26, 30,32,34) deposited using electrochemical deposition and wherein the electronic integrated circuit is shielded from electromagnetic radiation.

Abstract translation: 一种屏蔽电子集成电路装置（7），包括形成有电子集成电路（14）的基板（10），位于基板上的电介质区域（12）和电子集成电路，其中电介质区域和基板基本上 被使用电化学沉积沉积的磁性材料区域（26,30,32,34）包围，并且其中电子集成电路被屏蔽免受电磁辐射。

公开(公告)号：WO2003063173A1

公开(公告)日：2003-07-31

申请号：PCT/US2003/000762

申请日：2003-01-09

Applicant: MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE

Inventor： NAJI, Peter, K. ,  DURLAM, Mark, A. ,  TEHRANI, Saied, N.

IPC: G11C11/16

CPC classification number: G11C7/14 ,  G11C11/15

Abstract: A magnetoresistive random access memory architecture (10) free of isolation devices includes a plurality of data columns of non-volatile magnetoresistive elements. A reference column (12) includes non-volatile magnetoresistive elements positioned adjacent to the data column. Each column is connected to a current conveyor (16-20). A selected data current conveyor and the reference current conveyor (20) are connected to inputs of a differential amplifier (65-68) for differentially comparing a data voltage to a reference voltage. The current conveyors are connected directly to the ends of the data and reference bitlines. This specific arrangement allows the current conveyors to be clamped to the same voltage which reduces or removes sneak circuits to substantially reduce leakage currents.

Abstract translation: 不含隔离器件的磁阻随机存取存储器架构10包括多个不挥发性磁阻元件的数据列。 参考柱12包括与数据列相邻定位的非易失性磁阻元件。 每列连接到当前的输送机16-20。 选择的数据电流输送机和参考电流传送器20连接到差分放大器65-68的输入端，用于将数据电压与参考电压进行差分比较。 目前的输送机直接连接到数据和参考位线的末端。 这种特定的布置允许当前输送机被夹紧到相同的电压，这减少或去除潜行电路以显着减少泄漏电流。

公开(公告)号：WO2004061857A1

公开(公告)日：2004-07-22

申请号：PCT/US2003/033247

申请日：2003-10-20

Applicant: MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE

Inventor： MEIXNER, Thomas, V. ,  GRYNKEWICH, Gregory, W. ,  MOLLA, Jaynal, A. ,  REN, J. Jack ,  WILLIAMS, Richard, G. ,  BUTCHER, Brian, R. ,  DURLAM, Mark, A.

IPC: G11C11/16

CPC classification number: H01L27/222 ,  B82Y10/00 ,  G11C11/16 ,  H01L43/12

Abstract: A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching is performed to form a trench (52) in the first material layer (24) and a cladding layer (56) is deposited in the trench (52). A buffer material layer (58) is formed overlying the cladding layer (56) and a portion of the buffer material layer (58) and a portion of the cladding layer (56) is removed.

Abstract translation: 提供了一种用于制造用于磁电装置的通量集中系统（62）的方法。 该方法包括以下步骤：提供在衬底（12）中形成的位线（10），并形成覆盖位线（10）和衬底（12）的第一材料层（24）。 进行蚀刻以在第一材料层（24）中形成沟槽（52），并且在沟槽（52）中沉积包层（56）。 缓冲材料层（58）形成在覆层（56）上，缓冲材料层（58）的一部分和包覆层（56）的一部分被去除。