Abstract:
A method of fabricating a catadioptric lens system (600), the method involving: fabricating a single catadioptric lens element having a bottom surface and an upper surface, the upper surface having a convex portion and a concave portion, both the convex and concave portions sharing a common axis of symmetry; cutting apart the catadioptric lens element to form 2n pie-shaped segments (630, 632, 640, 642), wherein n is an integer; and reassembling the 2n pie-shaped segments to form the catadioptric lens system with n of the 2n pie-shaped segments being located above a common plane and the rest of the 2n pie-shaped elements being below the common plane.
Abstract:
An array of conjugated quadratures of fields is measured interferometrically by a confocal interferometer (110) and detector system (70) wherein each conjugated quadratures comprises a difference of conjugated quadratures of fields of beams scattered/reflected or transmitted by a pair of spots (164, 166) in or on a substrate (60). The array of conjugated quadratures is measured jointly, i.e., simultaneously, and the components of each conjugated quadratures may be measured jointly. Each pair of spots generally has a relative displacement on the order of the three or more times the size of the spots in a direction nominally tangent to the surface of the substrate. The relative phases of the beams subsequently scattered/reflected or transmitted by the pair of spots on/in a substrate may be adjusted as a set by control of a single system parameter so that the conjugated quadratures of the array of conjugated quadratures are nominally zero, i.e., information may be obtained about the substrate with the interferometer and detector system operating in a dark field mode. Operation in a dark field mode leads to both reduced systematic and statistical errors in the information and increased throughput. The information may include the transverse derivative of a profile of one or more surfaces of a substrate; onedimensional, two-dimensional, and three-dimensional transverse differential images of a substrate; critical dimensions of features or artifacts on or in a substrate, and the size and location of sub-wavelength defects in or on a substrate.
Abstract:
A multiple source array including a guided-wave structure having a dielectric core and a cladding covering the dielectric core; and an array of dielectric-filled, guided-wave cavities in the cladding extending transversely from the dielectric core and forming an array of apertures through which optical energy that is introduced into the core exits from the core.
Abstract:
A differential interferometric confocal microscope for measuring an object, the microscope including a source-side pinhole array; a detector-side pinhole array; and an interferometer that images the array of pinholes of the source-side pinhole array onto a first array of spots located in front of an object plane located near where the object is positioned (166, 164I) and onto a second array of spots behind the object plane (164, 166I), wherein the first and second arrays of spots are displaced form each other in both a direction normal to the object plane and a direction parallel to the object plane, the interferometer also imaging the first arrays of spots onto a first image plane that is behind the detector-side pinhole array (190, 192) and imaging the second array of spots onto a second image plane that is in front of the detector-side pinhole array (194, 196) wherein each spot of the imaged first array of spots is aligned with a corresponding different spot of the imaged second array of spots and a corresponding different pinhole of the detector-side pinhole array.
Abstract:
Systems and methods for near-field, interferometric microscopy are disclosed in which a mask having an array of sub-wavelength apertures is used to couple near-field probe beams to a sample. The periphery of the mask further includes one or more larger apertures to couple light to the sample that forms the basis of an interferometric signal indicative of the relative distance between the mask and the sample. The interferometric signal can be the basis of a control signal in a servo system that dynamically positions the mask relative to the sample.
Abstract:
The invention features systems and methods for near-field, interferometric microscopy in which one or more phase retardation plates are positioned in the measurement and/or reference arms to reduce the contribution to the interference signal of background sources including, e.g., a beam component scattered from a near-field aperture used to couple a probe beam to a sample. The systems may operate in either reflective or transmissive modes.
Abstract:
An interferometric optical microscopy system for imaging an object, the system including: a measurement beam mask array having an array of aperture pairs positioned to receive radiation emitted from the object in response to a measurement beam, radiation emerging from the array of aperture pairs defining a measurement return beam; a reference beam source array positioned to receive a reference beam, the reference beam source array comprising an array of elements each configured to radiate a portion of the reference beam, the radiated reference beam portions defining a reference return beam; and imaging optics positioned to direct the measurement and reference return beams to the photo-detector and configured to produce overlapping conjugate images of the array of reference elements and the array of apertures pairs, wherein the conjugate image for each aperture pair overlaps with the conjugate image of a corresponding reference element, wherein the imaging optics include a pinhole array positioned in the conjugate image plane, the pinhole array having an array of pinholes each aligned with a corresponding aperture pair image, and wherein the measurement and reference beams are derived from a common source.
Abstract:
Methods and apparatus (100, 110) are disclosed for measurement of critical dimensions (CD) of features and detection of defects in reflecting UV, VUV, and EUV lithography masks and in transmitting UV and VUV lithography masks. The measured CD's may be used in the determination of optical proximity corrections (OPC) and/or in mask fabrication process control. The transmitting masks may comprise binary and various types of phase shift masks.
Abstract:
An interferometric microscope (110) for making interferometric measurements of locations within an object (60) that is in a medium, there being a mismatch between indices of refraction of said object and said medium, the microscope (110) including a source (18) for generating an input beam; an interferometer (10) which is configured to receive the input beam and generate therefrom a measurement beam, to focus the measurement beam onto a selected spot in the object (60) and produce for that selected spot a return measurement beam, and to combine the return measurement beam and a reference beam to produce an interference beam; and a detector system (70) which is positioned to receive the interference beam, wherein the return measurement beam travels along a path from the object (60) to the detector system (70) and wherein the interferometer includes a compensating layer of material (50B) positioned in the path of the return measurement beam, the compensating layer (50B) producing a mismatch in the index of refraction along the path of the return measurement beam that compensates for the mismatch between the indices of refraction of the object and the medium.
Abstract:
A method of fabricating a catadioptric lens system (600), the method involving: fabricating a single catadioptric lens element having a bottom surface and an upper surface, the upper surface having a convex portion and a concave portion, both the convex and concave portions sharing a common axis of symmetry; cutting apart the catadioptric lens element to form 2n pie-shaped segments (630, 632, 640, 642), wherein n is an integer; and reassembling the 2n pie-shaped segments to form the catadioptric lens system with n of the 2n pie-shaped segments being located above a common plane and the rest of the 2n pie-shaped elements being below the common plane.