公开(公告)号：WO2022237388A1

公开(公告)日：2022-11-17

申请号：PCT/CN2022/085123

申请日：2022-04-02

Applicant: 中兴通讯股份有限公司

Inventor： 蔺帅南 ,  张倩 ,  张秀 ,  赖远庭

IPC: H01L21/48 ,  H01L23/367 ,  H01L23/427 ,  H01L23/473 ,  H01L21/4871 ,  H01L23/3672 ,  H01L23/4275

Abstract: 一种蒸发结构、散热器、半导体器件及制备方法，其中，蒸发结构的制备方法，包括：提供基底，并于基底上形成底板、连接底板的侧板、及多个间隔布设于底板的回流件，其中，侧板形成有充液口，且侧板围设于底板周侧，以使基底形成具有开口的腔室(S11)；在底板的内表面、侧板的内表面、及回流件的表面形成毛细结构层(S12)；提供基顶，于基顶的焊接区设置保护件，并在基顶设置有保护件一侧形成毛细结构层以形成顶板(S13)；将保护件和顶板分离，使焊接区外露(S14)；将顶板的焊接区与侧板和回流件对应，并通过焊接区将顶板与侧板、及回流件焊接固定，以封盖开口使底板、顶板及侧板配合形成蒸发腔(S15)；通过充液口注入蒸发液，并密封充液口，以形成蒸发结构(S16)。

公开(公告)号：WO2022267268A1

公开(公告)日：2022-12-29

申请号：PCT/CN2021/124091

申请日：2021-10-15

Applicant: 佛山华智新材料有限公司

Inventor： 王郑 ,  马文珍 ,  李志恒

IPC: H01S5/024 ,  H05K7/20 ,  H01L23/46 ,  B23K20/021 ,  F28D15/02 ,  F28D2021/0029 ,  F28F2275/061 ,  F28F2280/04 ,  F28F3/048 ,  F28F3/086 ,  F28F3/12 ,  H01L21/4871 ,  H01L23/3672 ,  H01L23/473 ,  H01S5/02423 ,  H01S5/02469

Abstract: 本发明采用热键合工艺对微通道热沉进行加工，通过在微通道热沉的各层盖板上放置上下盖板，直接施压，无需添加其他粘结剂，可避免采用钎焊工艺造成通道内部阻塞、电化学腐蚀等问题，提高微通道热沉产品的可靠性。且在焊接前，先将上盖板和下盖板按照微通道结构进行加工，形成镂空结构，然后与微通道热沉对齐堆叠，再施压焊接，不仅实现了对微通道壁的精准、有效施压，还可大大缓解在施压焊接的过程中对微通道热沉结构的压力，减轻微通道热沉冷却液通道部的形变，相比于常规的扩散焊工艺，在同等条件下可对微通道热沉施加更大的压力，提高微通道热沉层间结合力，提高产品稳固性。

公开(公告)号：WO2021249509A1

公开(公告)日：2021-12-16

申请号：PCT/CN2021/099498

申请日：2021-06-10

Applicant: 华为技术有限公司

Inventor： 徐焰 ,  姬忠礼 ,  陈余

IPC: H01L23/31 ,  H01L23/367 ,  H01L25/07 ,  H01L23/48 ,  H01L23/535 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L23/3121 ,  H01L23/3672 ,  H01L23/481 ,  H01L25/071 ,  H01L2924/181

Abstract: 本申请公开的实施例涉及半导体装置和包括该半导体装置的电子设备。该半导体装置包括：第一半导体层；第二芯片；导热层，与所述第一半导体层和所述第二芯片层叠设置并且位于所述第一半导体层与所述第二芯片之间，用于在所述导热层内传导来自所述第一半导体层和/或所述第二芯片的热量，所述导热层在水平方向的导热系数大于或等于在垂直方向的导热系数；以及第一导电柱，贯穿所述导热层，以使得所述第一半导体层与所述第二芯片通过所述第一导电柱实现电互连，其中所述第一导电柱与所述导热层电绝缘，所述第一导电柱的延伸方向为所述垂直方向，其中所述导热层在水平方向的导热系数大于所述第一半导体层的导热系数。通过设置导热层，这种半导体装置可以降低局部热点效应。

公开(公告)号：WO2021133759A1

公开(公告)日：2021-07-01

申请号：PCT/US2020/066525

申请日：2020-12-22

Applicant: VEEA, INC. ,  MIGLIORINO, Bob ,  LICCONE, Michael ,  GREANEY, Shaun Joseph ,  DOYLE, Dave ,  MIRABELLA, Michael ,  WINTNER, Perry ,  LUBBE, Theodore ,  SMITH, Clint

Inventor： MIGLIORINO, Bob ,  LICCONE, Michael ,  GREANEY, Shaun Joseph ,  DOYLE, Dave ,  MIRABELLA, Michael ,  WINTNER, Perry ,  LUBBE, Theodore ,  SMITH, Clint

IPC: H01Q1/02 ,  G06F1/16 ,  H01L23/40 ,  H01Q1/24 ,  H01Q1/42 ,  H05K5/00 ,  H05K7/20 ,  G06F1/1698 ,  G06F1/181 ,  G06F1/20 ,  G06F1/203 ,  G06F1/206 ,  G06F2200/1635 ,  H01L23/367 ,  H01L23/3672 ,  H01Q1/246 ,  H04B1/036 ,  H05K7/20163 ,  H05K7/20409

Abstract: The embodiments include a stackable computing device that includes an integrated heatsink and antenna structure and a housing structure. The housing structure includes a housing casing that surrounds the integrated heatsink and antenna structure. The integrated heatsink and antenna structure includes a heatsink base and one or more radio frequency (RF) antenna portions. The heatsink base includes a connector port that provides an interface between components of the computing device and other computing or peripheral devices. For example, the heatsink base may include platform that is configured to have circuitry fixedly secured on a first side of the platform with a connector of the circuitry aligned with an aperture of the connector port such that a connection to the circuitry is accepted by circuitry of another computing device.

公开(公告)号：WO2022208467A1

公开(公告)日：2022-10-06

申请号：PCT/IB2022/053071

申请日：2022-04-01

Applicant: OVH

Inventor： CHEHADE, Ali ,  HNAYNO, Mohamad

IPC: H05K7/20 ,  B66D2700/025 ,  B66D2700/026 ,  B66D3/04 ,  B66D3/20 ,  F28D2021/0029 ,  F28D21/00 ,  F28F3/027 ,  G06F1/20 ,  G06F1/206 ,  G06F2200/201 ,  H01L23/3672 ,  H01L23/44 ,  H01L23/473 ,  H05K7/1488 ,  H05K7/1489 ,  H05K7/20236 ,  H05K7/20245 ,  H05K7/20263 ,  H05K7/20272 ,  H05K7/203 ,  H05K7/20772 ,  H05K7/20781 ,  H05K7/20809 ,  H05K7/20818

Abstract: An autonomous immersive cooling container (500, 600) configured to cool at least one electronic device (504, 604) is described. The autonomous immersive cooling container (500, 600) includes a container (500, 600), having sidewalls (508, 608), that contains a dielectric immersion cooling liquid (502, 602), the at least one electronic device (504, 604) being, at least in part, immersed in the dielectric immersion cooling liquid (502, 602). The autonomous immersive cooling container (500, 600) further includes a plurality of cooling structures (520, 620) disposed at non-perpendicular angles on the sidewalls (508, 608), the plurality of cooling structures (520, 620) configured to transfer heat from an interior of the container (500, 600) to exterior air such that no additional cooling subsystem is used to cool the dielectric immersion cooling liquid (502, 602).

公开(公告)号：WO2022208402A1

公开(公告)日：2022-10-06

申请号：PCT/IB2022/052975

申请日：2022-03-30

Applicant: OVH

Inventor： CHEHADE, Ali ,  BAUCHART, Gregory Francis Louis

IPC: H05K7/20 ,  B66D2700/025 ,  B66D2700/026 ,  B66D3/04 ,  B66D3/20 ,  F28D2021/0029 ,  F28D21/00 ,  F28F3/027 ,  G06F1/20 ,  G06F1/206 ,  G06F2200/201 ,  H01L23/3672 ,  H01L23/44 ,  H01L23/473 ,  H05K7/1488 ,  H05K7/1489 ,  H05K7/20236 ,  H05K7/20245 ,  H05K7/20263 ,  H05K7/20272 ,  H05K7/203 ,  H05K7/20772 ,  H05K7/20781 ,  H05K7/20809 ,  H05K7/20818

Abstract: An immersive cooling system is described. The system includes an immersive cooling container (300), including: a first reservoir (302); a second reservoir (304); numerous slots (308), each configured to hold a casing (200, 320); a reservoir connector (310) corresponding to each slot (308), and configured to provide fluid communication with the first reservoir (302); and a pump (306) configured to convey a dielectric immersion cooling liquid from the second reservoir (304) to the first reservoir (302). The immersive cooling system also includes a casing (200, 320), configured to contain an electronic device and to fit within a slot (308) of the container (300). The casing (200, 320) includes an inlet (202) configured to be in fluid communication with the reservoir connector (310) of the slot (308) within which the casing (200, 320) is disposed to facilitate flow of the cooling liquid into an interior of the casing (200, 320) through the reservoir connector (310) and an outlet configured to facilitate flow of the cooling liquid from the interior of the casing (200, 320) into the second reservoir (304).

公开(公告)号：WO2021086893A2

公开(公告)日：2021-05-06

申请号：PCT/US2020/057628

申请日：2020-10-28

Applicant: RAYTHEON COMPANY

Inventor： MAYBERRY, Travis ,  MCCORDIC, Craig H. ,  ELLSWORTH, Joseph R.

IPC: H01L21/48 ,  B23K20/10 ,  B33Y10/00 ,  B33Y80/00 ,  H01L23/373 ,  H01L23/473 ,  H01L23/427 ,  B22F5/006 ,  B23K20/103 ,  B23K20/106 ,  B23K2101/14 ,  B23K2103/10 ,  B33Y70/00 ,  H01L21/4871 ,  H01L21/4882 ,  H01L23/367 ,  H01L23/3672 ,  H01L23/3675 ,  H01L23/3735 ,  H01L23/3736

Abstract: A method of forming a cooling structure for a heat-dissipating surface includes arranging a heat spreader layer adjacent the heat-dissipating surface, bonding a coldplate directly to the heat spreader layer opposite the heat-dissipating surface, and forming an intermetallic bond between the heat spreader layer and the coldplate. The coldplate is bonded to the heat spreader layer using ultrasonic additive manufacturing.

公开(公告)号：WO2021262317A2

公开(公告)日：2021-12-30

申请号：PCT/US2021/029942

申请日：2021-04-29

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION

Inventor： MA, Zhenqiang ,  ZHANG, Huilong ,  GONG, Shaoqin

IPC: H01L23/367 ,  H01L29/66 ,  H01L29/778 ,  H01L23/522 ,  H01L23/3672 ,  H01L23/5226 ,  H01L29/2003 ,  H01L29/41708 ,  H01L29/66431 ,  H01L29/7371 ,  H01L29/7786

Abstract: Flexible transistors and electronic circuits incorporating the transistors are provided. The flexible transistors promote heat dissipation from the active regions of the transistors while preserving their mechanical flexibility and high-frequency performance. The transistor designs utilize thru-substrate vias (TSVs) beneath the active regions of thin-film type transistors on thin flexible substrates. To promote rapid heat dissipation, the TSVs are coated with a material having a high thermal conductivity that transfers heat from the active region of the transistor to a large-area ground.

公开(公告)号：WO2021252100A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/030697

申请日：2021-05-04

Applicant: QUALCOMM INCORPORATED

Inventor： LAN, Je-Hsiung ,  KIM, Jonghae ,  DUTTA, Ranadeep

IPC: H01L23/522 ,  H01F17/00 ,  H01L23/367 ,  H01L23/373 ,  H01L23/64 ,  H01L21/48 ,  H01L21/56 ,  H01L21/4882 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L23/3128 ,  H01L23/3672 ,  H01L23/3677 ,  H01L23/3731 ,  H01L23/3732 ,  H01L23/3738 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5385 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L2924/1421

Abstract: A semiconductor package is described. The semiconductor package includes a passive substrate and a first integrated passive device (IPD) in a first interlayer-dielectric (ILD) layer on the passive substrate. The semiconductor package also includes a second ILD layer on the first ILD layer. The semiconductor package further includes a second IPD in a third ILD layer on the second ILD layer. The semiconductor package also includes a thermal mitigation structure on inductive elements of the second IPD.

公开(公告)号：WO2021198521A1

公开(公告)日：2021-10-07

申请号：PCT/EP2021/058817

申请日：2021-04-02

Applicant: THE PROVOST, FELLOWS, SCHOLARS AND OTHER MEMBERS OF BOARD OF TRINITY COLLEGE DUBLIN

Inventor： MCCLOSKEY, David

IPC: H02S40/42 ,  B21D53/02 ,  F28F3/02 ,  F28F13/12 ,  F24S25/40 ,  F28F3/025 ,  H01L23/3672 ,  H02S40/425

Abstract: A heat exchanger unit having a top and a bottom, the heat exchanger comprising a plurality of fins spaced apart from each other and having a predetermined length, thickness and height, with application for use with a photovoltaic solar panel.