Invention Grant
- Patent Title: Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction
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Application No.: US15880999Application Date: 2018-01-26
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Publication No.: US11552452B2Publication Date: 2023-01-10
- Inventor: Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/343 ; B82Y20/00 ; H01L21/02 ; H01S5/32 ; H01L31/0304 ; H01L31/036 ; H01L31/0735 ; H01L33/00 ; H01L33/06 ; H01L33/16 ; H01L33/32 ; H01S5/20 ; H01S5/22 ; H01S5/30 ; H01S5/34
Abstract:
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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