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公开(公告)号：US11552452B2
公开(公告)日：2023-01-10
申请号：US15880999
申请日：2018-01-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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2.发明申请SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/- 15 DEGREES IN THE C-DIRECTION 审中-公开M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度公开(公告)号：US20150255959A1
公开(公告)日：2015-09-10
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/343 , H01L33/00 , H01L33/16 , H01S5/20 , H01L31/0735 , H01L31/036 , H01L31/0304 , H01S5/32 , H01L33/06 , H01L33/32
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
Abstract translation: 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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公开(公告)号：US09917422B2
公开(公告)日：2018-03-13
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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4.发明申请公开(公告)号：US20180152004A1
公开(公告)日：2018-05-31
申请号：US15880999
申请日：2018-01-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/343 , H01L31/036
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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