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    HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION
    2.
    发明申请
    HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION 审中-公开
    用于防止活跃区域外部缺陷的空穴流动和非放射性重构的空穴阻挡层

    公开(公告)号：US20130100978A1

    公开(公告)日：2013-04-25

    申请号：US13659191

    申请日：2012-10-24

    Applicant: The Regents of the University of California

    Inventor： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James Stephen Speck ,  Shuji Nakamura

    IPC: H01L29/201 ,  H01S5/343 ,  H01L33/04

    CPC classification number: H01L29/205 ,  B82Y20/00 ,  H01L29/2003 ,  H01L33/06 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

    Abstract: An (Al,In,B,Ga)N based device including a plurality of (Al,In,B,Ga)N layers overlying a semi-polar or non-polar GaN substrate, wherein the (Al,In,B,Ga)N layers include at least a defected layer, a blocking layer, and an active region, the blocking layer is between the active region and the defected layer of the device, and the blocking layer has a larger band gap than surrounding layers to prevent carriers from escaping the active region to the defected layer. One or more (AlInGaN) device layers are above and/or below the (Al,In,B,Ga)N layers. Also described is a nonpolar or semipolar (Al,In,B,Ga)N based optoelectronic device including at least an active region, wherein stress relaxation (Misfit Dislocation formation) is at heterointerfaces above and/or below the active region.

    Abstract translation: 一种（Al，In，B，Ga）N基装置，其包括覆盖半极性或非极性GaN衬底的多个（Al，In，B，Ga）N层，其中（Al，In，B，Ga ）N层至少包括缺陷层，阻挡层和有源区，阻挡层位于器件的有源区和缺陷层之间，并且阻挡层具有比周围层更大的带隙以防止载流子 从有源区域转移到缺陷层。 一个或多个（AlInGaN）器件层位于（Al，In，B，Ga）N层的上方和/或下方。 还描述了至少包括活性区域的非极性或半极性（Al，In，B，Ga）N基光电器件，其中应力松弛（不匹配位错形成）位于有源区上方和/或下方的异质界面处。

    (Al,In,B,Ga)N BASED SEMIPOLAR AND NONPOLAR LASER DIODES WITH POLISHED FACETS
    4.
    发明申请
    (Al,In,B,Ga)N BASED SEMIPOLAR AND NONPOLAR LASER DIODES WITH POLISHED FACETS 审中-公开
    （Al，In，B，Ga）N基于二极体和非极性激光二极管与抛光面

    公开(公告)号：US20140126599A1

    公开(公告)日：2014-05-08

    申请号：US14065736

    申请日：2013-10-29

    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

    Inventor： Po Shan Hsu ,  Jeremiah J. Weaver ,  Steven P. DenBaars ,  James S. Speck S. Speck ,  Shuji Nakamura

    IPC: H01S5/10

    CPC classification number: H01S5/0202 ,  B82Y20/00 ,  H01S5/0203 ,  H01S5/3202 ,  H01S5/34333

    Abstract: An (Al,In,B,Ga)N or III-nitride based laser diode epitaxially grown on orientations other than a c-plane orientation, namely various semipolar and nonpolar orientations, and having polished facets. The semipolar orientation may be a semipolar (11-22), (11-2-2), (101-1), (10-1-1), (20-21), (20-2-1), (30-31) or (30-3-1) orientation, and the nonpolar orientation may be a nonpolar (10-10) or (11-20) orientation. The facets are chemically mechanically or mechanically polished.

    Abstract translation: 外延生长在c面取向以外的取向上的（Al，In，B，Ga）N或III族氮化物基激光二极管，即各种半极性和非极性取向，并具有抛光面。 半极性取向可以是半极性（11-22），（11-2-2），（101-1），（10-1-1），（20-21），（20-2-1），（ 30-31）或（30-3-1）取向，并且非极性取向可以是非极性（10-10）或（11-20）取向。 这些面经化学机械或机械抛光。

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