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公开(公告)号：US11552452B2
公开(公告)日：2023-01-10
申请号：US15880999
申请日：2018-01-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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2.发明申请SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/- 15 DEGREES IN THE C-DIRECTION 审中-公开M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度公开(公告)号：US20150255959A1
公开(公告)日：2015-09-10
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/343 , H01L33/00 , H01L33/16 , H01S5/20 , H01L31/0735 , H01L31/036 , H01L31/0304 , H01S5/32 , H01L33/06 , H01L33/32
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
Abstract translation: 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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3.发明申请ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 有权通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制公开(公告)号：US20130259080A1
公开(公告)日：2013-10-03
申请号：US13904908
申请日：2013-05-29
Applicant: The Regents of the University of California
Inventor： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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公开(公告)号：US09917422B2
公开(公告)日：2018-03-13
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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Patent Agency Ranking
5.发明授权Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations 有权通过部分或完全松弛的具有失配位错的铝铟镓氮层，在半极性氮化物量子阱中进行各向异性应变控制公开(公告)号：US08866126B2
公开(公告)日：2014-10-21
申请号：US13904908
申请日：2013-05-29
Applicant: The Regents of the University of California
Inventor： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC: H01L33/12 , B82Y20/00 , H01L21/02 , H01S5/34 , H01S5/32 , H01L33/00 , H01S5/343 , H01S5/22 , H01L33/32 , H01L33/16
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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6.发明申请HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING 审中-公开通过表面粗化的高光提取效率的基于氮化物的发光二极管公开(公告)号：US20140346542A1
公开(公告)日：2014-11-27
申请号：US14456768
申请日：2014-08-11
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC classification number: H01L33/22 , H01L21/02433 , H01L21/02458 , H01L33/0075 , H01L33/10 , H01L33/18 , H01L33/20 , H01L33/32 , H01L2933/0083
Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
Abstract translation: III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光 萃取。 纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。
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7.发明申请公开(公告)号：US20180152004A1
公开(公告)日：2018-05-31
申请号：US15880999
申请日：2018-01-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/343 , H01L31/036
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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8.发明授权High light extraction efficiency nitride based light emitting diode by surface roughening 有权高光提取效率氮化物基发光二极管通过表面粗糙化公开(公告)号：US09040326B2
公开(公告)日：2015-05-26
申请号：US14456768
申请日：2014-08-11
Applicant: The Regents of the University of California
Inventor： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC classification number: H01L33/22 , H01L21/02433 , H01L21/02458 , H01L33/0075 , H01L33/10 , H01L33/18 , H01L33/20 , H01L33/32 , H01L2933/0083
Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
Abstract translation: III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光 萃取。 纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。
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9.发明申请ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 审中-公开通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制公开(公告)号：US20140376584A1
公开(公告)日：2014-12-25
申请号：US14482760
申请日：2014-09-10
Applicant: The Regents of the University of California
Inventor： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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