-
公开(公告)号：EP2701251A4
公开(公告)日：2015-01-28
申请号：EP12773524
申请日：2012-02-07
发明人： KYONO TAKASHI , ENYA YOHEI , SUMITOMO TAKAMICHI , YOSHIZUMI YUSUKE , UENO MASAKI , YANASHIMA KATSUNORI , TASAI KUNIHIKO , NAKAJIMA HIROSHI
IPC分类号： H01S5/343 , H01L21/205
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
-
2.发明公开GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开甘光半导体元件，其制造方法光学甘半导体元件，外延片和方法为建设GaN系半导体薄膜
公开(公告)号：EP2312651A4
公开(公告)日：2015-05-27
申请号：EP09804942
申请日：2009-08-03
发明人： ENYA YOHEI , YOSHIZUMI YUSUKE , UENO MASAKI , AKITA KATSUSHI , KYONO TAKASHI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
-
3.发明公开GALLIUM NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME, GALLIUM NITRIDE LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD FOR PRODUCING GALLIUM NITRIDE LIGHT-EMITTING DIODE 审中-公开发光氮化镓半导体元件中，用于生产，氮化镓发光二极管，其制造氮化镓发光二极管外延片AND METHOD
公开(公告)号：EP2346097A4
公开(公告)日：2014-05-21
申请号：EP09819191
申请日：2009-10-06
发明人： YOSHIZUMI YUSUKE , ENYA YOHEI , UENO MASAKI , KYONO TAKASHI
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/16 , H01S5/22 , H01S5/3201 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S5/34333 , H01S2304/04
-
4.发明公开GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND EPITAXIAL SUBSTRATE 审中-公开III族氮化物半导体激光元件，其制造方法III族氮化物半导体激光元件和外延基板
公开(公告)号：EP2518840A4
公开(公告)日：2014-12-31
申请号：EP10839085
申请日：2010-11-11
发明人： YOSHIZUMI YUSUKE , ENYA YOHEI , KYONO TAKASHI , SUMITOMO TAKAMICHI , SAGA NOBUHIRO , ADACHI MASAHIRO , SUMIYOSHI KAZUHIDE , TOKUYAMA SHINJI , TAKAGI SHIMPEI , IKEGAMI TAKATOSHI , UENO MASAKI , KATAYAMA KOJI
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/2201 , H01S5/3202
-
5.发明公开NITRIDE-SEMICONDUCTOR LUMINESCENT ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD OF PRODUCING NITRIDE-SEMICONDUCTOR LUMINESCENT ELEMENT 审中-公开氮化物半导体发光元件，制造氮化物半导体发光元素外延和方法
公开(公告)号：EP2390972A4
公开(公告)日：2013-09-18
申请号：EP09838886
申请日：2009-12-28
发明人： KYONO TAKASHI , YOSHIZUMI YUSUKE , ENYA YOHEI , AKITA KATSUSHI , UENO MASAKI , SUMITOMO TAKAMICHI
IPC分类号： H01S5/343 , B82Y20/00 , H01L21/02 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/18 , H01S5/32
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/18 , H01S5/3201 , H01S5/3202 , H01S5/34333
-
6.发明公开GROUP-III NITRIDE SEMICONDUCTOR ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING A GROUP-III NITRIDE SEMICONDUCTOR ELEMENT 审中-公开III族氮化物半导体BAULE MENT，外延基板及其制造方法Ⅲ族氮化物半导体元件
公开(公告)号：EP2456025A4
公开(公告)日：2015-01-21
申请号：EP10799834
申请日：2010-07-13
发明人： ENYA YOHEI , YOSHIZUMI YUSUKE , KYONO TAKASHI , SUMITOMO TAKAMICHI , AKITA KATSUSHI , UENO MASAKI , NAKAMURA TAKAO
IPC分类号： H01S5/343 , H01L21/205
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
-
公开(公告)号：EP2472606A4
公开(公告)日：2015-01-07
申请号：EP10781399
申请日：2010-02-26
发明人： UENO MASAKI , YOSHIZUMI YUSUKE , ENYA YOHEI , KYONO TAKASHI , AKITA KATSUSHI , SUMITOMO TAKAMICHI , ADACHI MASAHIRO , TOKUYAMA SHINJI
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
-
8.发明公开GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR PREPARING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开III族氮化物半导体激光元件及其制造方法III族氮化物半导体激光元件
公开(公告)号：EP2487765A4
公开(公告)日：2014-12-31
申请号：EP10820602
申请日：2010-09-29
发明人： YOSHIZUMI YUSUKE , ENYA YOHEI , KYONO TAKASHI , ADACHI MASAHIRO , TOKUYAMA SHINJI , SUMITOMO TAKAMICHI , UENO MASAKI , IKEGAMI TAKATOSHI , KATAYAMA KOJI , NAKAMURA TAKAO
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1085 , H01S5/16 , H01S5/2009 , H01S5/2201 , H01S5/3213 , H01S5/34333 , H01S2301/14
-
公开(公告)号：EP2455988A4
公开(公告)日：2014-03-12
申请号：EP10787665
申请日：2010-06-14
-
10.发明公开GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开III族氮化物半导体设备的情况的III族氮化物半导体器件的外延和方法
公开(公告)号：EP2410580A4
公开(公告)日：2013-11-06
申请号：EP09812406
申请日：2009-04-24
发明人： KYONO TAKASHI , YOSHIZUMI YUSUKE , ENYA YOHEI , AKITA KATSUSHI , UENO MASAKI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
IPC分类号： H01L33/00 , B82Y10/00 , B82Y20/00 , B82Y40/00 , C30B29/38 , H01L21/02 , H01L21/205 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.011 秒)
