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公开(公告)号：EP2701251A4
公开(公告)日：2015-01-28
申请号：EP12773524
申请日：2012-02-07
Applicant: SUMITOMO ELECTRIC INDUSTRIES , SONY CORP
Inventor： KYONO TAKASHI , ENYA YOHEI , SUMITOMO TAKAMICHI , YOSHIZUMI YUSUKE , UENO MASAKI , YANASHIMA KATSUNORI , TASAI KUNIHIKO , NAKAJIMA HIROSHI
IPC: H01S5/343 , H01L21/205
CPC classification number: H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
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2.发明公开GROUP-III NITRIDE CRYSTAL SUBSTRATE, GROUP-III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME 审中-公开与外延层，半导体元件及其制造方法III族氮化物晶体衬底，III族氮化物晶体衬底
公开(公告)号：EP2477237A4
公开(公告)日：2015-11-11
申请号：EP10813531
申请日：2010-01-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： ISHIBASHI KEIJI , YOSHIZUMI YUSUKE
IPC: H01L33/16 , B82Y20/00 , C30B25/20 , C30B29/38 , C30B29/40 , C30B33/04 , H01L33/32 , H01S5/02 , H01S5/028 , H01S5/20 , H01S5/32 , H01S5/343
CPC classification number: C30B33/04 , B82Y20/00 , C30B29/403 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
Abstract: A group III nitride crystal substrate is provided in which, wherein, a plane spacing of arbitrary specific parallel crystal lattice planes of the crystal substrate being obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a main surface (1s) of the crystal substrate while X-ray diffraction conditions of the specific parallel crystal lattice planes of the crystal substrate are satisfied, a uniform distortion at a surface layer of the crystal substrate represented by a value of |d 1 - d 2 |/d 2 obtained from a plane spacing d 1 at the X-ray penetration depth of 0.3 µm and a plane spacing d 2 at the X-ray penetration depth of 5 µm is equal to or lower than 1.9 x 10 -3 , and wherein the main surface (1s) has a plane orientation inclined in the direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes (1c) of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.
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3.发明公开GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开甘光半导体元件，其制造方法光学甘半导体元件，外延片和方法为建设GaN系半导体薄膜
公开(公告)号：EP2312651A4
公开(公告)日：2015-05-27
申请号：EP09804942
申请日：2009-08-03
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： ENYA YOHEI , YOSHIZUMI YUSUKE , UENO MASAKI , AKITA KATSUSHI , KYONO TAKASHI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
CPC classification number: H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
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4.发明公开METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR, METHOD FOR FABRICATING NITRIDE-BASED SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING EPITAXIAL WAFER 审中-公开用于生产p型氮化镓半导体，制造方法的半导体元件的氮化物和方法，用于制造外延晶片的
公开(公告)号：EP2333819A4
公开(公告)日：2013-11-20
申请号：EP09819023
申请日：2009-05-22
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： UENO MASAKI , YOSHIZUMI YUSUKE , NAKAMURA TAKAO
CPC classification number: H01L21/02389 , C30B25/183 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007
Abstract: A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is formed on a supporting base 13 in a reactor 10. An organometallic source and ammonia are supplied to the reactor 10 to grow the GaN semiconductor layer 17 on a GaN semiconductor layer 15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions 15 and 17 are grown, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is prepared in the reactor 10. After the atmosphere 19 is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region 17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor 17a and an epitaxial wafer E has been fabricated.
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5.发明公开GROUP III NITRIDE COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开GROUP III NITRIDVERBUNDSUBSTRAT，工艺为III族氮化物半导体部件用和方法
公开(公告)号：EP2908330A4
公开(公告)日：2016-06-01
申请号：EP13845267
申请日：2013-09-04
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： ISHIBASHI KEIJI , HACHIGO AKIHIRO , HIROMURA YUKI , MATSUMOTO NAOKI , NAKAHATA SEIJI , NAKANISHI FUMITAKE , YANAGISAWA TAKUYA , UEMATSU KOJI , SEKI YUKI , YAMAMOTO YOSHIYUKI , YOSHIZUMI YUSUKE , MIKAMI HIDENORI
IPC: H01L21/02 , H01L21/762 , H01L33/00
CPC classification number: H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate (1) includes a group III nitride film (13) and a support substrate (11) formed from a material different in chemical composition from the group III nitride film (13). The group III nitride film (13) is joined to the support substrate (11) in one of a direct manner and an indirect manner. The group III nitride film (13) has a thickness of 10 µm or more. A sheet resistance of a group III-nitride-film (13)-side main surface (13m) is 200 ©/sq or less. A method for manufacturing the group III nitride composite substrate (1) includes the steps of: bonding the group III nitride film (13) and the support substrate (11) to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of the group III nitride film (13) and the support substrate bonded to each other.
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Patent Agency Ranking6.发明公开GALLIUM NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME, GALLIUM NITRIDE LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD FOR PRODUCING GALLIUM NITRIDE LIGHT-EMITTING DIODE 审中-公开发光氮化镓半导体元件中，用于生产，氮化镓发光二极管，其制造氮化镓发光二极管外延片AND METHOD
公开(公告)号：EP2346097A4
公开(公告)日：2014-05-21
申请号：EP09819191
申请日：2009-10-06
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： YOSHIZUMI YUSUKE , ENYA YOHEI , UENO MASAKI , KYONO TAKASHI
CPC classification number: H01L33/32 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/16 , H01S5/22 , H01S5/3201 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S5/34333 , H01S2304/04
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7.发明公开GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE HAVING EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 审中-公开III族氮化物晶体衬底，组用于生产外延层和半导体器件及其方法III氮化物晶体衬底
公开(公告)号：EP2514858A4
公开(公告)日：2013-11-13
申请号：EP10837390
申请日：2010-11-15
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： ISHIBASHI KEIJI , YOSHIZUMI YUSUKE , MINOBE SHUGO
IPC: H01L21/20 , B24B37/00 , B82Y10/00 , B82Y40/00 , C30B29/38 , C30B29/40 , H01L21/205 , H01L21/304 , H01L33/06 , H01L33/32 , H01S5/343
CPC classification number: C30B29/403 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L33/32 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/34333 , H01S2304/04
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公开(公告)号：EP2455988A4
公开(公告)日：2014-03-12
申请号：EP10787665
申请日：2010-06-14
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： KYONO TAKASHI , ENYA YOHEI , YOSHIZUMI YUSUKE , AKITA KATSUSHI , SUMITOMO TAKAMICHI , UENO MASAKI
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9.发明公开GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开III族氮化物半导体设备的情况的III族氮化物半导体器件的外延和方法
公开(公告)号：EP2410580A4
公开(公告)日：2013-11-06
申请号：EP09812406
申请日：2009-04-24
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： KYONO TAKASHI , YOSHIZUMI YUSUKE , ENYA YOHEI , AKITA KATSUSHI , UENO MASAKI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
IPC: H01L33/00 , B82Y10/00 , B82Y20/00 , B82Y40/00 , C30B29/38 , H01L21/02 , H01L21/205 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343
CPC classification number: H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
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公开(公告)号：EP2455989A4
公开(公告)日：2013-01-16
申请号：EP10799702
申请日：2010-06-18
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： KYONO TAKASHI , ENYA YOHEI , YOSHIZUMI YUSUKE , AKITA KATSUSHI , UENO MASAKI , SUMITOMO TAKAMICHI , ADACHI MASAHIRO , TOKUYAMA SHINJI
CPC classification number: H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404
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