公开(公告)号：EP3215652B1

公开(公告)日：2018-12-26

申请号：EP15828542.9

申请日：2015-11-03

申请人： ASM International N.V.

发明人： GRANNEMAN, Ernst Hendrik August ,  HU, Leilei

IPC分类号： C23C16/455 ,  C23C16/54 ,  C23C16/458 ,  C23C16/44 ,  H01L21/677

CPC分类号： C23C16/45548 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/54 ,  H01J37/3244 ,  H01L21/6776 ,  H01L21/67784

摘要： An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

公开(公告)号：EP3271498B1

公开(公告)日：2018-12-05

申请号：EP16718516.4

申请日：2016-03-21

申请人： ASM International N.V.

发明人： GRANNEMAN, Ernst Hendrik August ,  COOLEN, Michiel Leonard Matthieu ,  VAN VELZEN, Wilhelmus Gerardus

IPC分类号： C23C16/44

CPC分类号： C23C16/4404 ,  C23C16/4407

摘要： A method for easily removing a deposition residue from deposition space components of a deposition apparatus in which substrates are treated for applying at least one layer using one of CVD, PECVD, ALD, PVD and evaporation. In a deposition apparatus having a deposition space that is bounded by deposition space walls at least one deposition treatment is performed to apply a layer on a substrate within the deposition space. The deposition space walls are provided with a coating. The deposition space walls are cleaned with a selective wet-etching treatment. The composition of the deposition space wall coating is adapted to the composition of the deposition residue that is deposited on the deposition space walls during the deposition treatment and the liquid etching agent that is used during the selective wet etching treatment, such that the deposition residue is removed without affecting the deposition space walls.

公开(公告)号：EP3271498A1

公开(公告)日：2018-01-24

申请号：EP16718516.4

申请日：2016-03-21

申请人： ASM International N.V.

发明人： GRANNEMAN, Ernst Hendrik August ,  COOLEN, Michiel Leonard Matthieu ,  VAN VELZEN, Wilhelmus Gerardus

IPC分类号： C23C16/44

CPC分类号： C23C16/4404 ,  C23C16/4407

摘要： A method for easily removing a deposition residue from deposition space components of a deposition apparatus in which substrates are treated for applying at least one layer using one of CVD, PECVD, ALD, PVD and evaporation. In a deposition apparatus having a deposition space that is bounded by deposition space walls at least one deposition treatment is performed to apply a layer on a substrate within the deposition space. The deposition space walls are provided with a coating. The deposition space walls are cleaned with a selective wet-etching treatment. The composition of the deposition space wall coating is adapted to the composition of the deposition residue that is deposited on the deposition space walls during the deposition treatment and the liquid etching agent that is used during the selective wet etching treatment, such that the deposition residue is removed without affecting the deposition space walls.

公开(公告)号：EP2294247B1

公开(公告)日：2016-04-27

申请号：EP09750808.9

申请日：2009-05-20

申请人： ASM International N.V.

发明人： GRANNEMAN, Ernst H.A. ,  VAN NOOTEN, Sebastiaan E.

IPC分类号： C30B25/14 ,  C30B29/20 ,  C30B35/00 ,  H01L21/677 ,  C23C16/54 ,  C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  C30B29/20 ,  C30B35/005 ,  H01L21/67784

公开(公告)号：EP2976444A1

公开(公告)日：2016-01-27

申请号：EP14715704.4

申请日：2014-03-18

申请人： ASM International N.V.

发明人： GRANNEMAN, Ernst Hendrik August ,  TAK, Pieter

IPC分类号： C23C16/455 ,  B65G51/03 ,  C23C16/54 ,  H01L21/677

CPC分类号： C23C16/45544 ,  B65G51/03 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/54 ,  H01L21/67784

摘要： A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 42) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.

摘要翻译： 一种衬底处理设备（100），包括包括下部隧道壁（122），上部隧道壁（142）和两个横向隧道壁（128）的工艺隧道（102），所述隧道壁被构造成将工艺隧道 空间（104），其沿纵向输送方向（7）延伸并且适于容纳平行于上部和下部隧道壁（122,142）定向的至少一个基本平坦的基板（180），所述过程隧道被分为 包括所述下部隧道壁的下部隧道主体（120）和包括所述上部隧道壁的上部隧道主体（140），所述隧道主体（120,140）沿着至少一个纵向延伸的连接（160）可分离地彼此连接， 使得它们在其中结合有过程管道空间（104）的隧道壁（122,128,42）和允许侧向维护进入过程管道内部的打开构造的关闭构造之间可相互移动。

公开(公告)号：EP1216106B1

公开(公告)日：2014-05-21

申请号：EP00963326.4

申请日：2000-09-08

申请人： ASM INTERNATIONAL N.V.

发明人： RAAIJMAKERS, Ivo

IPC分类号： B05C11/00 ,  H05H1/10 ,  C23C16/455 ,  C23C16/452 ,  C30B25/14 ,  C30B29/38 ,  H01J37/32

CPC分类号： C23C16/45544 ,  C23C16/452 ,  C23C16/45521 ,  C23C16/45536 ,  C23C16/45542 ,  C30B25/14 ,  C30B29/38 ,  H01J37/3244 ,  Y10T117/10

公开(公告)号：EP1345255B1

公开(公告)日：2014-04-23

申请号：EP03251586.8

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： Oosterlaken, Theodorus Gerardus Maria ,  Huussen, Frank ,  Landsmeer, Timothy Robert ,  Terhorst, Herbert

IPC分类号： H01L21/67 ,  C23C16/458

CPC分类号： H01L21/67103

公开(公告)号：EP2395546A3

公开(公告)日：2013-04-24

申请号：EP11169577.1

申请日：2011-06-10

申请人： ASM International N.V.

发明人： de Ridder, Chris G.M. ,  Boonstra, Klaas P. ,  Garssen, Adriaan ,  Huussen, Frank

IPC分类号： H01L21/673 ,  H01L31/18 ,  C23C16/458 ,  F27B17/00

CPC分类号： H01L21/67303 ,  C23C16/45546 ,  C23C16/4587 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/67757 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for processing solar cells comprising:
- providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing;
- composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber,
- loading the solar cell substrates into the process chamber;
- subjecting the solar cell substrates to a process in the process chamber.

公开(公告)号：EP2037484B1

公开(公告)日：2010-10-06

申请号：EP08014738.2

申请日：2008-08-20

申请人： ASM INTERNATIONAL N.V.

发明人： Kuznetsov, Vladimir

IPC分类号： H01L21/00 ,  B01J4/00

CPC分类号： C30B23/005 ,  C23C16/045 ,  C23C16/4404 ,  C23C16/45565 ,  C30B35/002 ,  H01L21/67103 ,  H01L21/67109 ,  Y10T29/41

公开(公告)号：EP1965412A1

公开(公告)日：2008-09-03

申请号：EP08009872.6

申请日：2005-09-03

申请人： ASM INTERNATIONAL N.V.

发明人： Granneman, Ernst H.A. ,  Van den Berg, Jannes Remco

IPC分类号： H01L21/00

CPC分类号： H01L21/67109 ,  C30B31/14 ,  H01L21/67306 ,  H01L21/68742

摘要： Susceptors plates are formed having a minimum surface roughness. The wafer contact surfaces of the susceptor plates have a surface roughness Ra value of about 0.6 µm or more. The contact surface is otherwise flat and lacking in large protrusions. In addition, the susceptors have a low transparency to more closely match the heat absorption properties of the supported wafer. Advantageously, heat transfer from the susceptors to the wafers is highly uniform. Thus, using these susceptors to support the wafers during high temperature semiconductor processing (e.g., at > 1000°C) results in no or few crystallographic slip lines being formed on the wafers.

摘要翻译： 形成具有最小表面粗糙度的感受器板。 基座板的晶片接触面的表面粗糙度Ra值为约0.6μm以上。 接触表面是平坦的，并且没有大的突起。 此外，感受体具有低透明度以更紧密地匹配被支撑晶片的吸热性能。 有利地，从基座到晶片的热传递是高度均匀的。 因此，在高温半导体处理（例如，> 1000℃）下使用这些基座来支撑晶片导致晶片上没有形成或几乎没有形成晶体学滑移线。