摘要:
A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less.
摘要:
The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)λ
摘要翻译:本发明提供一种表面发射激光器,其提供足够的光学输出并且适合作为用于电子照相设备的光源,以及包括表面发射激光器的表面发射激光器阵列和图像形成装置。 表面发射激光器包括在前反射镜的前表面上的第一阶梯结构。 在第一阶梯结构中,第一区域的光路长度与第二区域的光程长度之间的差值L满足以下表达式:(¼+ N)λ<| L | <(¾+ N)λ其中 N是整数。
摘要:
The invention describes a laser device (100) enabling controlled emission of individual laser beams (194). The laser device (100) comprises an optically pumped extended cavity laser with one gain element whereby a multitude of pump lasers (110) are provided in order to generate independent pump beams (191) and thus corresponding laser beams (194). The laser device (100) may be used to enable simplified or improved laser systems (500) as, for example, two or three-dimensional laser printers. The pump laser (110) may be VCSEL and the laser (160) may be a VECSEL monolithically integrated with the pump VCSEL array on the same substrate. Pump mirrors (140) and external cavity mirror (150) may be integrated into a single optical reflector with regions having different curvature. The laser emission is controlled by the pump light, i.e. transversal shape of the laser beam and/or number of laser beams is controlled by switching on/off the individual pump lasers (110).
摘要:
A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed.
摘要:
A tunable source includes a short cavity laser with quantum well gain region supporting wide tuning range. The short cavity laser with a quantum well gain region, large free spectral range cavity, fast tuning response and single transverse, and longitudinal mode operation is disclosed. Both electrical and optical pumping of the short cavity laser are presented.
摘要:
A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λ lase . Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λ lase .
摘要:
The present invention relates to a VCSEL array comprising several VCSELs arranged side by side on a common substrate (1). Each VCSEL is formed of at least a top mirror (5, 14), an active region (4), a current injection layer (3) and an undoped bottom semiconductor mirror (2). The current injection layer (3) is arranged between the active region (4) and the bottom semiconductor mirror (2). At least an upper layer of the substrate (1) is electrically conducting. Trenches (8) and/or holes are formed between the bottom semiconductor mirrors (2) of said VCSELs to said upper layer of said substrate (1). A metallization (9) electrically connects the upper layer of the substrate (1) with the current injection layer (3) through said trenches (8) and/or holes. The proposed VCSEL array allows a homogeneous current injection an has a high efficiency and power density.