SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR
    101.
    发明公开
    SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR 有权
    表面发射激光元件和原子振荡器

    公开(公告)号:EP3128628A1

    公开(公告)日:2017-02-08

    申请号:EP16182243.2

    申请日:2016-08-01

    发明人: SUZUKI, Ryoichiro

    IPC分类号: H01S5/183 H01S5/00 H01S5/20

    摘要: A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less.

    摘要翻译: 表面发射激光器元件包括下布拉格反射镜; 上布拉格反射镜; 以及形成在下布拉格反射镜和上布拉格反射镜之间并包括有源层的谐振器区域。 波长调整区域形成在下布拉格反射镜或上布拉格反射镜中,并且包括第二相位调整层,波长调整层和第一相位调整层,从谐振器区域为 形成。 波长调整区域的光学厚度为(2N + 1)×λ/ 4左右,波长调整层形成于从波长调整区域的谐振器侧的端部起的光学距离为 大约M×λ/ 2,其中λ是发射光的波长,M和N是正整数,并且M是N或更小。

    SURFACE EMITTING LASER, SURFACE-EMITTING-LASER ARRAY, AND IMAGE FORMING APPARATUS
    102.
    发明授权
    SURFACE EMITTING LASER, SURFACE-EMITTING-LASER ARRAY, AND IMAGE FORMING APPARATUS 有权
    OBERFLÄCHENEMITTIERENDERLASER,OBERFLÄCHENEMITTIERENDESLASERARRAY UND BILDERZEUGUNGSVORRICHTUNG

    公开(公告)号:EP2628219B1

    公开(公告)日:2017-01-25

    申请号:EP11782690.9

    申请日:2011-10-05

    发明人: IKUTA, Mitsuhiro

    IPC分类号: H01S5/183

    摘要: The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)λ

    摘要翻译: 本发明提供一种表面发射激光器,其提供足够的光学输出并且适合作为用于电子照相设备的光源,以及包括表面发射激光器的表面发射激光器阵列和图像形成装置。 表面发射激光器包括在前反射镜的前表面上的第一阶梯结构。 在第一阶梯结构中,第一区域的光路长度与第二区域的光程长度之间的差值L满足以下表达式:(¼+ N)λ<| L | <(¾+ N)λ其中 N是整数。

    VCSEL ARRAY WITH INCREASED EFFICIENCY
    110.
    发明公开
    VCSEL ARRAY WITH INCREASED EFFICIENCY 有权
    以更高的效率VCSEL阵列

    公开(公告)号:EP2684263A1

    公开(公告)日:2014-01-15

    申请号:EP12708970.4

    申请日:2012-03-02

    IPC分类号: H01S5/42 H01S5/183

    摘要: The present invention relates to a VCSEL array comprising several VCSELs arranged side by side on a common substrate (1). Each VCSEL is formed of at least a top mirror (5, 14), an active region (4), a current injection layer (3) and an undoped bottom semiconductor mirror (2). The current injection layer (3) is arranged between the active region (4) and the bottom semiconductor mirror (2). At least an upper layer of the substrate (1) is electrically conducting. Trenches (8) and/or holes are formed between the bottom semiconductor mirrors (2) of said VCSELs to said upper layer of said substrate (1). A metallization (9) electrically connects the upper layer of the substrate (1) with the current injection layer (3) through said trenches (8) and/or holes. The proposed VCSEL array allows a homogeneous current injection an has a high efficiency and power density.