摘要:
In an ion source (1) for use with an ion implant device comprising: an ionization chamber (5) defined by a plurality of side walls defining an ionization volume (16), one (13) of said side walls including an ion extraction aperture (37) for enabling an ion beam to be extracted from said ionization chamber (16) along a predetermined axis defining an ion beam axis; and a gas source (2) in fluid communication with said ionization chamber (16); an electron source (12) for producing an electron beam for ionizing the gas in said ionization chamber (16); said electron source (12) has an emitter (33) external to the ionization volume (16) and one (13) of said sidewalls (13) includes an electron entrance aperture , said emitter (33) configured relative to said aperture to cause an electron beam (32) to be directed across the ionization chamber (16) and ionize said gas by direct electron impact ionization by energetic electrons
摘要:
In an ion source including an ionization chamber defining an enclosed volume having a gas inlet for receiving a feed gas, an exit aperture for enabling ions to exit said ionization chamber defining an ion beam along an ion beam axis, and an electron source for generating electrons in order to ionize said feed gas in said ionization chamber, said exit aperture is formed as an elongated slot for generating a ribbon beam.
摘要:
A multi-mode ion source comprises an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation, namely, an discharge mode, and a non-arc discharge mode.
摘要:
A method of implanting ions is disclosed which comprises the steps of: (a) producing a volume of gas phase molecules of material of the form C n H x wherein n and x are integers, and n ‰¥ 2, and x ‰¥ 0; (b) ionizing the C n H x molecules to form C n H y + or C n H y - , wherein y is an integer such that y>0; and (c) accelerating the ionized molecules by an electric field into a target.
摘要:
An ion source (1) for ion implantation system includes a vaporizer (2) for producing process gas; an electron source (12) for directing an electron beam (32) to ionize the process gas within an ionization volume (16); a beam dump (11); an ionization chamber (5); and an extraction aperture (37) for extracting an ion beam.